01385nas a2200229   4500008004100000022001400041245003700055210003600092260009900128300001200227490000700239520071800246653001300964653001100977653002100988653000901009653001301018100001901031700002101050700001301071856007101084       2007                        eng d  a0272-884200aVaristors based on Ta-doped TiO20 aVaristors based on Tadoped TiO2  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLANDbELSEVIER SCI LTDcMAR  a301-3030 v333 a<p>The nonlinear current (I)-voltage (V) characteristics of titanium dioxide are examined when doped with small quantities (0.05-0.5 at.%) of tantalum pentaoxide. For optimum compositions, the nonlinear coefficients are found to be in the range of 25-30 and the breakdown field strength (EB) is similar to 4000 V/cm. The obtained alpha- and E-B-values are higher than the previously reported values for TiO2 ceramics. The acceptor like surface states at the grain boundary adsorb oxygen during sintering and cooling, leading to formation of grain boundary barrier. The grain boundary barrier height (OB) is calculated using Schottky equation. (c) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.</p>10aCeramics10aOxides10aSchottky barrier10aTiO210avaristor1 aNavale, S., C.1 aMurugan, Vadivel1 aRavi, V.  uhttps://library.ncl.res.in/content/varistors-based-ta-doped-tio2-002416nas a2200217   4500008004100000022001400041245009900055210006900154260000800223300001200231490000700243520166800250653002701918653001901945653002101964653001901985653002002004100002202024700003002046856012202076       2018                        eng d  a0360-319900aPt - g-C3N4 - (Au/TiO2): electronically integrated nanocomposite for solar hydrogen generation0 aPt gC3N4 AuTiO2 electronically integrated nanocomposite for sola  cJAN  a601-6130 v433 a<p>A potential nanocomposite photocatalyst was designed by integrating Pt nanoclusters (co catalyst and electron sink) with graphitic carbon nitride (g-C3N4 (gcn)) (charge diffusion) and 0.5 wt % Au containing Au-TiO2 (AuT) (plasmonic on semiconductor) for solar water splitting (SWS). Variety of Pt-gcn-AuTiO2 compositions has been evaluated for SWS under one sun conditions. Complexity of the photocatalyst was increased systematically from Au-TiO2, gcn-TiO2 to Pt-gcn-Au-TiO2 to explore the influence of different combinations. Electronic integration of charge separation/diffusion component (gcn) with light absorbing sensitizer components (Au and gcn), and co-catalyst (Pt) seems to be the critical factor to improve hydrogen yield (HY) or overall efficiency. Although addition of gcn increase the HY of composites, there is no SWS activity observed on bare TiO2 or gcn. Au or Pt on gcn enhances the charge separation effectively and interface between Au and/or Pt with gcn works as the Schottky barrier. A monodispersion of Au over TiO2 and Pt nanoclusters over gcn/AuTiO2 composite lead to the maximum solar hydrogen yield (1.52 mmol/h g) with an apparent quantum yield (AQY) of 7.5%. Photoelectron and photoluminescence spectral studies confirm the electron transfer from Au to gcn, and Au and/or gcn to titania. A thorough physico-chemical investigation of various composites underscores the electronic integration aspects of the nanocomposite towards storage of electrons in the Pt co-catalyst and hence an effective charge separation and an increase in AQY. (C) 2017 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.</p>10aElectronic integration10aPhotocatalysis10aSchottky barrier10aSolar hydrogen10awater splitting1 aDevaraji, Perumal1 aGopinath, Chinnakonda, S.  uhttps://library.ncl.res.in/content/pt-g-c3n4-autio2-electronically-integrated-nanocomposite-solar-hydrogen-generation02456nas a2200301   4500008004100000022001400041245016000055210006900215260000900284300001600293490000700309520139100316653003101707653003201738653002601770653002801796653002401824653002101848100001701869700002301886700002001909700002901929700001901958700000501977700002201982700002502004856012502029       2021                        eng d  a1944-824400aResistive switching in HfO2-x/La0.67Sr0.33MnO3 heterostructures: an intriguing case of low H-field susceptibility of an E-field controlled active interface0 aResistive switching in HfO2xLa067Sr033MnO3 heterostructures an i  cNOV   a54133-541420 v133 aHigh-performance nonvolatile resistive random access memories (ReRAMs) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emerging Internet of Things (IoT) arena. Here, we examine the resistive switching (RS) behavior in growth-controlled HfO2/La0.67Sr0.33MnO3 (LSMO) heterostructures and their tunability in a low magnetic field. It is demonstrated that oxygen-deficient HfO2 films show bipolar switching with a high on/off ratio, stable retention, as well as good endurance owing to the orthorhombic-rich phase constitution and charge (de)trapping-enabled Schottky-type conduction. Most importantly, we have demonstrated that RS can be tuned by a very low externally applied magnetic field (similar to 0-30 mT). Remarkably, application of a magnetic field of 30 mT causes RS to be fully quenched and frozen in the high resistive state (HRS) even after the removal of the magnetic field. However, the quenched state could be resurrected by applying a higher bias voltage than the one for initial switching. This is argued to be a consequence of the electronically and ionically ``active'' nature of the HfO2-x/LSMO interface on both sides and its susceptibility to the electric and low magnetic field effects. This result could pave the way for new designs of interface-engineered high-performance oxitronic ReRAM devices.10acharge trapping-detrapping10alow external magnetic field10aoxide-oxide interface10apulsed laser deposition10aresistive switching10aSchottky barrier1 aAntad, Vivek1 aShaikh, Parvez, A.1 aBiswas, Abhijit1 aRajput, Shatruhan, Singh1 aDeo, Shrinivas1 a1 aPatil, Shivprasad1 aOgale, Satishchandra  uhttps://library.ncl.res.in/content/resistive-switching-hfo2-xla067sr033mno3-heterostructures-intriguing-case-low-h-field