01646nas a2200241   4500008004100000022001400041245009700055210006900152260006900221300001000290490000800300520079800308653001201106653002301118653001501141653002201156100002001178700001901198700001801217700001901235700002201254856012801276       2010                        eng d  a0925-838800aPreparation and characterization of CuInSe2 thin films by chemical bath deposition technique0 aPreparation and characterization of CuInSe2 thin films by chemic  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcJUN  a78-810 v5003 a<p>Copper indium diselenide (CIS) thin films have been deposited using a precursor solution containing copper sulphate, indium trichoride, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at room temperature. The as grown brown colored films were found to be well adherent to glass substrates. The films were characterized by X-ray diffraction, scanning electron microscopy, atomic absorption spectroscopy, optical absorption, electrical resistivity, and thermo electric measurement techniques. The analysis of optical absorption data shows band-gap energy (E-g) to be 1.1 eV. The electrical resistivity of the thin film was found to be of the order of 10(2) (Omega cm). Thermoelectric power measurement shows n-type conduction. (C) 2010 Published by Elsevier B.V.</p>10aCuInSe210aOptical properties10aThin films10aX-ray diffraction1 aHankare, P., P.1 aRathod, K., C.1 aChate, P., A.1 aJadhav, A., V.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/preparation-and-characterization-cuinse2-thin-films-chemical-bath-deposition-technique-0