02657nas a2200241 4500008004100000022001400041245005700055210005600112260009200168300001200260490000800272520186700280653000802147653002402155653002002179653003502199653001002234653000802244100002502252700002402277700002602301856008802327 2005 eng d a1042-015000aSurface disorder in c-Si induced by swift heavy ions0 aSurface disorder in cSi induced by swift heavy ions a4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLANDbTAYLOR & FRANCIS LTDcJUN a207-2180 v1603 a

The disorders induced in crystalline silicon (c-Si) through the process of electronic energy loss in the swift heavy ion irradiation were investigated. A number of silicon <100> samples were irradiated with 65 MeV oxygen ions at different fluences, 1x10(13) to 1.5x10(14) ions/cm(2), and characterized by the Raman spectroscopy, the optical reflectivity, the X-ray reflectivity, the atomic force microscopy (AFM) and the X-ray diffraction (XRD) techniques. The intensity, redshift, phonon coherence length and asymmetric broadening associated with the Raman peaks reveal that stressed and disordered lattice zones are produced in the surface region of the irradiated silicon. The average crystallite size, obtained by analyzing Raman spectrum with the phonon confinement model, was very large in the virgin silicon but decreased to <100 nm dimension in the ion irradiated silicon. The results of the X-ray reflectivity, AFM and optical reflectivity of 200-700 nm radiation indicate that the roughness of the silicon surface has enhanced substantially after ion irradiation. The diffusion of oxygen in silicon surface during ion irradiation is evident from the oscillation in the X-ray reflectivity spectrum and the sharp decrease in the reflectivity of 200-400 nm radiation. The rise in temperature, estimated from the heat spike model, was high enough to melt the local silicon surface. The results of XRD indicate that lattice defects have been induced and a new plane <211> has been formed in the silicon <100> after ion irradiation. The results of the present study show that the energy deposited in crystalline silicon through the process of electronic energy loss similar to 0.944 keV/nm per ion is sufficient to induce disorders of appreciable magnitude in the silicon surface even at a fluence of similar to 10(13) ions/cm(2).

10aAFM10acrystalline silicon10aion irradiation10aoptical and X-ray reflectivity10aRaman10aXRD1 aBogle, Kashinath, A.1 aGokhale, Suresh, P.1 aBhoraskar, Vasant, N. uhttps://library.ncl.res.in/content/surface-disorder-c-si-induced-swift-heavy-ions-001533nas a2200265 4500008004100000022001400041245006100055210006100116260009200177300001200269490000800281520071500289653000801004653001001012653000801022653000801030100001701038700001901055700001901074700001701093700002401110700001701134700002101151856009501172 2012 eng d a1042-015000aSHI irradiation induced effects in functionalized MWCNTs0 aSHI irradiation induced effects in functionalized MWCNTs a4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLANDbTAYLOR & FRANCIS LTDcFEB a569-5760 v1673 a

Multi-walled carbon nanotubes (MWCNTs) have attracted extensive attention globally due to their applications in modern nanotechnology. It is very important to study the effects on these MWCNTs under swift heavy ion (SHI) irradiation since ion irradiation has been recognized as one of the best tools for nanostructuring of materials, in general. Here, we present the effects of 80MeV Ni ions with a fluence ranging from 3 x 10(12) to 3 x 10(13) ions/cm(2) on functionalized MWCNT mats. The properties of pristine and irradiated samples were studied using X-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effects of SHI irradiation on these samples are discussed in detail.

10aCNT10aRaman10aSHI10aTEM1 aSaikiran, V.1 aPathak, A., P.1 aRao, Srinivasa1 aDevaraju, G.1 aDebgupta, Joyashish1 aKyriakou, I.1 aEmfietzoglou, D. uhttps://library.ncl.res.in/content/shi-irradiation-induced-effects-functionalized-mwcnts-002150nas a2200205 4500008004100000020002200041245013100063210006900194260023600263520118000499653001901679653000901698653001601707653001001723100002201733700002401755700001901779700001701798856012901815 2016 eng d a978-1-5090-2419-300aField emission investigation of composites of polypyrrole with graphene oxide, reduced graphene oxide and graphene nanoribbons0 aField emission investigation of composites of polypyrrole with g a345 E 47th St, New York,NY 10017 USAbIEEE; IEEE Electron Devices Soc; ZEISS; Modern Electron; Amer Vacuum Soci; Paul Scherrer Inst; Elect & Comp Engn; Univ British Columbia, Peter Wall Inst Adv Studies; Dept Elect & Comp EngncJUL3 a

The monomer pyrrole has been polymerized by chemical route in the presence of graphene oxide (GO), reduced graphene oxide (rGO) and graphene nanoribbons (GNR) separately to prepare nanocomposites as Polypyrrole-GO (PGO), PPy-rGO (PRGO), PPy-GNR (PGNR), respectively. The morphological, chemical and structural characterization of the as-synthesized products was carried out using scanning electron microscopy (SEM), Raman and fourier transform infrared (FTIR) spectroscopy. Field emission (FE) studies of PGO, PRGO, PGNR emitters were performed at the base pressure of 1x10(-8) mbar in planar `diode' configuration. Onset and threshold field values corresponding to emission current densities of 1 and 100 mu A/cm(2) are observed to be 1.5 and 2.3V/mu m for PGO, 1.4 and 2.2 V/mu m for PRGO and lowest for PGNR as 0.9 and 1.2V/mu m, respectively. The maximum emission current density of 2.5 mA/cm(2) drawn for PGO at the applied electric field of 3.2V/mu m, 1.2 mA/cm(2) at 3.6V/mu m from the PRGO and 8 mA/cm(2) at the field of 2.2 V/mu m from the PGNR emitters. An emission current versus time (I-t) plot shows stable emission behavior for the preset current values.

10afield emission10aFTIR10apolypyrrole10aRaman1 aHarpale, Kashmira1 aBansode, Sanjeewani1 aMore, Mahendra1 aLate, D., J. uhttps://library.ncl.res.in/content/field-emission-investigation-composites-polypyrrole-graphene-oxide-reduced-graphene-oxide