02418nas a2200241   4500008004100000022001400041245010300055210006900158260007300227300001000300490000800310520155400318653003501872653001701907653001901924653000801943653000801951100002301959700002501982700002002007700001902027856013002046       2005                        eng d  a0169-433200aDeposition of indium nitride films by activated reactive evaporation process - a feasibility study0 aDeposition of indium nitride films by activated reactive evapora  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY  a73-780 v2453 a<p>Indium nitride (InN) films are deposited by `activated reactive evaporation (ARE)' process using parallel plate coupled nitrogen plasma (radio frequency source of 13.56 MHz) and evaporation of pure indium powder by resistive heating. Depositions are carried out by varying RF plasma power, on n-type silicon &amp;LANGBRAC; 1 0 0&amp;RANGBRAC; substrate, maintained at room temperature, at a nitrogen gas pressure of 1.06 x 10(-1) Pa (8 x 10 (-4) Torr). The film's crystallinity was examined by X-ray diffraction (XRD) and topography by scanning electron microscope (SEM). The diffraction pattern shows polycrystalline nature of the deposited films with characteristics of hexagonal structure. XRD peak intensity increases with increase in power. SEM observations show a smooth and pinhole free surface having improved quality of film with hexagonal structure as the power is increased from 60 to 120 W. Primary X-ray photoelectron spectroscopy (XPS) results show binding energies of the In 3d levels and N 1s level matching well with that of stoichiometric InN. Further, the refractive index of the films, measured by ellipsometry, is in the range of η = 2.79-2.91 with the variation of plasma power, which is in good agreement with the standard value for indium nitride (η = 2.9). These results indicate the feasibility of using, `activated reactive evaporation (ARE)' process for indium nitride depositions on silicon &amp;LANGBRAC; 1 0 0&amp;RANGBRAC; substrates maintained at room temperature. © 2004 Elsevier B.V. All rights reserved.</p>10aactivated reactive evaporation10aellipsometry10aindium nitride10aSEM10aXRD1 aPatil, Sheetal, J.1 aBodas, Dhananjay, S.1 aMandale, A., B.1 aGangal, S., A.  uhttps://library.ncl.res.in/content/deposition-indium-nitride-films-activated-reactive-evaporation-process-feasibility-study-001920nas a2200229   4500008004100000022001400041245008800055210006900143260007300212300001200285490000800297520112800305653003001433653000901463653000901472653002501481653000801506100002501514700002001539700001901559856011201578       2005                        eng d  a0169-433200aDeposition of PTFE thin films by RF plasma sputtering on < 100 > silicon substrates0 aDeposition of PTFE thin films by RF plasma sputtering on 100 sil  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY  a202-2070 v2453 a<p>Polymers have been studied extensively due to the wonderful array of properties presented by them. Polymer materials can be coated/deposited by various techniques like sputtering (magnetron, ion beam, RF or dc), plasma polymerization, etc. and can be used in coatings, paint industries, etc. The present study deals with the RF sputter deposition of poly(tetrafluoro ethylene) (PTFE), commonly known as Teflon. Depositions were carried out on mirror polished silicon (1 0 0) substrates at different powers in the range of 100-200 W. The deposition time was kept constant at 60 min. The sputtered film shows lower contact angle of 50&amp;DEG; with water and 44&amp;DEG; with diiodomethane, a lower interfacial tension value of 0.76 dyne/cm, indicating hydrophilicity and good adhesion of the film with the substrate. FHR indicates presence of C-F, C-F-2 bonding groups in the deposited film. Further, XPS study shows presence of CF3 (292.2 eV), CF2 (290.8 eV), C-F (288.0 eV) and C-CF (286.4 eV) moieties indicating deposition of PTFE films at higher power levels of plasma. © 2004 Elsevier B.V. All rights reserved.</p>10aContact angle measurement10aFTIR10aPTFE10aRF plasma sputtering10aXPS1 aBodas, Dhananjay, S.1 aMandale, A., B.1 aGangal, S., A.  uhttps://library.ncl.res.in/content/deposition-ptfe-thin-films-rf-plasma-sputtering-100-silicon-substrates-001771nas a2200253   4500008004100000022001400041245009900055210006900154260007300223300001400296490000700310520087300317653003001190653000901220653001301229653002501242653000801267100002201275700002501297700002001322700001901342700002601361856013001387       2006                        eng d  a0167-577X00aElectron beam induced surface cross-linking of functional monomers coated on silicon substrate0 aElectron beam induced surface crosslinking of functional monomer  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY  a1360-13650 v603 a<p>A 3: 1 composition of functional monomer: multifunctional acrylate was spin coated and later cross-linked under the influence of keV electron irradiation on the surface of silicon to generate a surface-anchored cross-linked network bearing functional moieties. Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) as well as wetting angle measurements were used for the analysis of functional monomer cross-linked surfaces. Results of the surface reconstruction of surfaces and electron irradiated on coated silicon wafers reveal that long-term hydrophilic surfaces can be achieved. Thus, the surface architecture can be favorably manipulated by using this remarkable technique with a Suitable combination of functional monomers and cross-linkers. (c) 2005 Elsevier B.V. All rights reserved.</p>10aelectron beam irradiation10aFTIR10aPolymers10asurface modification10aXPS1 aMahapatra, S., K.1 aBodas, Dhananjay, S.1 aMandale, A., B.1 aGangal, S., A.1 aBhoraskar, Vasant, N.  uhttps://library.ncl.res.in/content/electron-beam-induced-surface-cross-linking-functional-monomers-coated-silicon-substrate-001895nas a2200265   4500008004100000022001400041245008600055210006900141260013700210300001400347490000700361520091500368653002701283653002701310653001701337653000801354100001801362700002201380700001601402700001501418700002901433700002201462700002501484856012001509       2011                        eng d  a0956-566300aQuantum dot based immunosensor using 3D circular microchannels fabricated in PDMS0 aQuantum dot based immunosensor using 3D circular microchannels f  aOXFORD FULFILLMENT CENTRE THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLANDbELSEVIER ADVANCED TECHNOLOGYcFEB  a3050-30530 v263 a<p>Microchannel is basic functional component of microfluidic chip and every step-forward of its construction technique has been receiving concern all over the world. The present work describes a novel, rapid and simple fabrication technique for building 3D microchannels in poly(dimethyl siloxane) (PDMS) elastomer. These microchannels were used for rapid detection of antigens (E. coli) by quantum dot (QD) based approach. Luminescent QD (CdTe) were synthesized by aqueous method and characterized using high resolution transmission electron microscopy (HRTEM), fluorescence spectroscopy and X-ray diffraction (XRD). The QDs were functionalized with anti-E. coli antibodies for immuno-detection. The reported process allowed easier and faster method of fabrication of circular 3D micochannels and demonstrated their potential use in an immuno-biosensor device. (C) 2010 Elsevier B.V. All rights reserved.</p>10aCapillary driven flows10aCircular microfluidics10aImmunosensor10aQDs1 aMorarka, Amit1 aAgrawal, Shailaja1 aKale, Sonia1 aKale, Anup1 aOgale, Satishchandra, B.1 aPaknikar, Kishore1 aBodas, Dhananjay, S.  uhttps://library.ncl.res.in/content/quantum-dot-based-immunosensor-using-3d-circular-microchannels-fabricated-pdms-002577nas a2200265   4500008004100000022001400041245012300055210006900178260007300247300001200320490000800332520157800340653003501918653002101953653002001974653003401994100002702028700002702055700002502082700001802107700001802125700001702143700001902160856013202179       2014                        eng d  a0169-433200aSurface studies on benzophenone doped PDMS microstructures fabricated using KrF excimer laser direct write lithography0 aSurface studies on benzophenone doped PDMS microstructures fabri  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP  a292-3000 v3143 a<p><span style="color: rgb(51, 51, 51); font-family: arial, helvetica, sans-serif; font-size: 13px; line-height: 22px; background-color: rgb(248, 248, 248);">his paper discusses microfabrication process for benzophenone doped polydimethylsiloxane (PDMS) using laser lithography. KrF excimer laser of 248 nm with 20 ns pulse width at repetition rate of 1 Hz was used for microfabrication of undoped and benzophenone doped PDMS. The doped-PDMS shows sensitivity below 365 nm, permitting processing under ambient light. The analysis of etch depth revealed that doped PDMS shows self developable sensitivity at lower fluence of similar to 250 mJ/cm(2). The unexposed and exposed surface was studied using Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Scanning electron microscopy (SEM). Spectrocopic analysis indicated increase in C-O, C=O, Si-O-3 and Si-O-4 bonding at the expense of Si-C and Si-O-2 bonds of PDMS. In case of laser exposed doped-PDMS, removal of benzophenone from probe depth of spectroscopy was observed. Whereas the surface morphology of exposed and unexposed doped-PDMS was observed to be same, indicating clean development of PDMS micropattems. The present study indicates that addition of 3.0 wt.% benzophenone in PDMS enhance self development sensitivity of PDMS. The self developable results on doped-PDMS are quite encouraging for its potential use in point of care Lab-On-Chip applications, for fabricating micropattems using direct write laser lithography technology.&nbsp;</span></p>10aDirect write laser lithography10aMicrofabrication10amicropatterning10aPoly(dimethylsiloxane) (PDMS)1 aKant, Madhushree, Bute1 aShinde, Shashikant, D.1 aBodas, Dhananjay, S.1 aPatil, K., R.1 aSathe, V., G.1 aAdhi, K., P.1 aGosavi, S., W.  uhttps://library.ncl.res.in/content/surface-studies-benzophenone-doped-pdms-microstructures-fabricated-using-krf-excimer-laser-001100nas a2200181   4500008004100000022001400041245009300055210006900148260011000217300001600327490000600343520036200349100001900711700001800730700002500748700002100773856012400794       2015                        eng d  a2046-206900aHydrothermal synthesis and characterization of carbon nanospheres: a mechanistic insight0 aHydrothermal synthesis and characterization of carbon nanosphere  aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcJUN  a59491-594940 v53 a<p>Hydrothermally synthesized carbon nanospheres (CNS) follow a process of early nucleation followed by growth during synthesis. Here we report that growth occurs precisely after 5 min and prior to it nucleation occurs. The nucleation is a brief step in nanoparticle formation followed by growth of the nanoparticle depending on the reaction parameters.</p>1 aBhagat, P., N.1 aPatil, K., R.1 aBodas, Dhananjay, S.1 aPaknikar, K., M.  uhttps://library.ncl.res.in/content/hydrothermal-synthesis-and-characterization-carbon-nanospheres-mechanistic-insight-0