01452nas a2200157   4500008004100000245009700041210006900138260008100207300001000288520076900298100002801067700002301095700002301118700002401141856012901165       2015                        eng d00aOne-pot thermal evaporation synthesis of CdS-RGO hetrostructure and its field emission study0 aOnepot thermal evaporation synthesis of CdSRGO hetrostructure an  aGuangzhou, Peoples R ChinabIEEE, 345 E 47th ST, New York, NY 10017 USAcJUL  a82-833 a<p>CdS-RGO heterostructure was synthesized by thermal evaporation method. The as-synthesized CdS-RGO heterostructure was characterized using X-ray Diffraction, SEM, and EADX, before field emission (FE) studies. The FE characteristics of a planar emitter made up of as-synthesized CdS-RGO heterostructures were measured at the base pressure 1x10(-8) mbar. The synthesized CdS-RGO heterostructure emitter is found to deliver a current density similar to 70 mu A/cm(2) at an applied electric field of similar to 4.7 V/mu m. Moreover, the nanocomposite shows excellent emission stability without significant current degradation making CdS-RGO heterostructure as a promising electron source for practical applications in various vacuum nano-microelectronic devices.</p>1 aBansode, Sanjeewani, R.1 aKhare, Ruchita, T.1 aMore, Mahendra, A.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/one-pot-thermal-evaporation-synthesis-cds-rgo-hetrostructure-and-its-field-emission-study