02161nas a2200253   4500008004100000022001400041245012300055210006900178260007300247300001400320490000700334520120100341653002901542653002001571653003501591653003701626653001601663100002101679700001801700700002001718700001801738700002601756856012501782       2005                        eng d  a0167-577X00aGrowth kinetics and thermodynamic stability of octadecyltrichlorosilane self-assembled monolayer on Si (100) substrate0 aGrowth kinetics and thermodynamic stability of octadecyltrichlor  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcDEC  a3890-38950 v593 a<p>We have studied the growth kinetics and thermodynamic stability of octadecyltrichlorosilane (OTS) self-assembled monolayers on Si (100) substrate in order to understand its role in controlling the adhesion and surface hydrophobicity. Time-dependent contact angle measurements, using water as a function of OTS concentration, show rapid monolayer formation in the initial stage followed by a slow attainment of full coverage and the overall kinetics approximately follows the Langmuir adsorption isotherm. The adsorption rate constant (k(a) = 150 M-1 s(-1)) is found to be significantly greater than the desorption rate constant (k(d) = 0.156 s(-1)) while the Gibbs free energy (Delta G(ads)) change amounts to -4.2 kcal/mol suggesting thermodynamic stability of OTS monolayer on a silicon surface. Partial monolayer formation by a `uniform' growth mechanism, even at low coverage, is revealed by atomic force microscopy (AFM) in conjunction with grazing angle FTIR spectroscopy. Analysis of the interfacial adhesion properties using Zisman plot suggests a critical surface tension (gamma(c)) of 20.7 dyn/cm for OTS monolayer on Si (100) surface. (C) 2005 Elsevier B.V. All rights reserved.</p>10aGibbs's free energy (AG)10agrowth kinetics10aoctadecyltrichlorosilane (OTS)10aself-assembled monolayers (SAMs)10aZisman plot1 aKulkarni, S., A.1 aMirji, S., A.1 aMandale, A., B.1 aGupta, R., P.1 aVijayamohanan, K., P.  uhttps://library.ncl.res.in/content/growth-kinetics-and-thermodynamic-stability-octadecyltrichlorosilane-self-assembled-002128nas a2200253   4500008004100000022001400041245011800055210006900173260009500242300001200337490000800349520114900357653002301506653001401529653002301543653003501566653001801601653003501619100002101654700002801675700002201703700001901725856013001744       2006                        eng d  a0021-979700aSuppression of electron-transfer characteristics of ferrocene by OTS monolayer on a silicon/electrolyte interface0 aSuppression of electrontransfer characteristics of ferrocene by   a525 B ST, STE 1900, SAN DIEGO, CA 92101-4495 USAbACADEMIC PRESS INC ELSEVIER SCIENCEcJUL  a777-7840 v2993 a<p>The passivating behavior of self-assembled monolayers (SAMs) of octadecyltrichlorosilane (OTS) on an n-type Si(100) electrode with and without a redox species like ferrocene in a polar non-aqueous medium has been investigated using techniques like contact angle measurements, Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) to understand the role of the monolayer. The electron-transfer behavior of ferrocene is found to be drastically affected by the presence of monolayer and the reasons for these are analyzed as a function of the change in resistance, dielectric thickness and coverage of the monolayer. Electrochemical impedance analysis in the presence of ferrocene gives the monolayer coverage as 0.998 and the apparent rate constant calculated from this gives 4.85 x 10(-12) cm s(-1) in comparison with 4.4 x 10(-8) cm s(-1) for a similar electrode without any monolayer. A positive shift of 200 mV in the flat-band potential after monolayer formation also suggests the covalent coupling of the silane nionolayer offering a protective barrier. (c) 2006 Elsevier Inc. All rights reserved.</p>10acyclic voltammetry10aferrocene10aimpedance analysis10aoctadecyltrichlorosilane (OTS)10arate constant10aself-assembled monolayer (SAM)1 aKulkarni, S., A.1 aKakade, Bhalchandra, A.1 aMulla, Imtiaz, S.1 aPillai, V., K.  uhttps://library.ncl.res.in/content/suppression-electron-transfer-characteristics-ferrocene-ots-monolayer-siliconelectrolyte-0