01814nas a2200241 4500008004100000022001400041245010700055210006900162260007300231300001200304490000800316520093400324653001701258653002901275653003201304100002201336700001801358700001701376700001401393700001701407700002201424856012601446 2005 eng d a0168-583X00aControlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation0 aControlled growth of silicon nanocrystallites in silicon oxide m aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP a185-1900 v2393 a

We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO(x)) are irradiated with 150 MeV silver ions at fluence varying from 5 x 10(11) to 1 x 10(13) ions/cm(2). The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiO(x) matrix, caused by swift heavy ion irradiation. (c) 2005 Elsevier B.V. All rights reserved.

10aoxide matrix10asilicon nanocrystallites10aswift heavy ion irradiation1 aChaudhari, P., S.1 aBhave, T., M.1 aPasricha, R.1 aSingh, F.1 aKanjilal, D.1 aBhoraskar, S., V. uhttps://library.ncl.res.in/content/controlled-growth-silicon-nanocrystallites-silicon-oxide-matrix-using-150-mev-ag-ion-002238nas a2200181 4500008004100000022001400041245012200055210006900177260007100246300001400317490000800331520151200339100002001851700001701871700001501888700002701903856012601930 2011 eng d a1520-610600aIdentification of sublattice damages in swift heavy ion irradiated N-doped 6H-SiC polytype studied by solid state NMR0 aIdentification of sublattice damages in swift heavy ion irradiat a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcJUN a7766-77720 v1153 a

We have studied N-doped 6H-SiC in its pristine and Swift Heavy Ion (SHI) irradiated (150 MeV Ag12+ ions) forms by solid state Nuclear Magnetic Resonance (NMR) at 7.01 T using C-13 and Si-29 as probe nuclei under magic angle spinning. We show that increased levels of nitrogen doping, than used before, lead to the observation of Knight shifts emanating from an increase in electron density in the conduction band, which in C-13 far exceed those in Si-29 MAS spectra. We have rationalized the differential effects in the MAS spectra and site-dependent paramagnetic shifts in terms of the nitrogen doping at the A, B, and C lattice sites. N-doping has a profound effect on Si-29 spin-lattice relaxation, and the site-dependent relaxation behavior is attributed to a difference in conduction electron properties at the different lattice sites. Si-29 T-1 measurements serve to identify the sublattice damages in SHI irradiated 6H-SiC. By determining the spin-lattice relaxation rates as a function of the SHI irradiation ion fluences, the change in relaxation behavior is correlated to the damage production mechanism. The sublattice damage leads to discernable changes in the interaction between the mobile unpaired electrons in the conduction band and the nuclear site, which profoundly influence the NMR relaxation properties. Our relaxation studies also provide evidence for site-dependent localized effects and a decrease in carrier spin density in the conduction band for the SHI irradiated 6H-SiC.

1 aViswanathan, E.1 aKanjilal, D.1 aSivaji, K.1 aGanapathy, Subramanian uhttps://library.ncl.res.in/content/identification-sublattice-damages-swift-heavy-ion-irradiated-n-doped-6h-sic-polytype-001944nas a2200301 4500008004100000022001400041245009700055210006900152260008100221300001100302490000700313520092500320653002701245653000701272653002501279653001401304100001601318700001801334700001701352700001501369700001701384700002401401700002101425700002601446700002301472700002201495856012501517 2015 eng d a0022-372700aReduction of graphene oxide by 100 MeV Au ion irradiation and its application as H2O2 sensor0 aReduction of graphene oxide by 100 MeV Au ion irradiation and it aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcSEP a3651050 v483 a

Graphene oxide (GO) synthesized from a modified Hummer's method was reduced (referred, rGO) by using 100 MeV Au ion species and its response to the sense H2O2 was investigated. The changes in the atomic composition and structural properties of rGO after irradiation were studied using x-ray diffraction, Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy. These results suggested that the removal of the oxygen-containing functional groups and the improvement of the electrochemical performance of reduced graphene oxide (rGO) after ion irradiation. Raman spectroscopic results revealed the increase in the disorder parameter (I-D/I-G) after Au ion irradiation and also the formation of a large number of small sp(2) domains due to the electronic energy loss of ion beam. The resultant rGO was investigated for H2O2 sensing using electrochemical techniques and it showed a good response.

10aelectronic energy loss10aGO10aion beam irradiation10areduction1 aHareesh, K.1 aJoshi, R., P.1 aShateesh, B.1 aAsokan, K.1 aKanjilal, D.1 aLate, Dattatray, J.1 aDahiwale, S., S.1 aBhoraskar, Vasant, N.1 aHaram, Santosh, K.1 aDhole, Sanjay, D. uhttps://library.ncl.res.in/content/reduction-graphene-oxide-100-mev-au-ion-irradiation-and-its-application-h2o2-sensor-1