01212nas a2200145 4500008004100000245007300041210006900114260000800183300001400191490000700205520072000212100002200932700001900954856009300973 2007 eng d00aConductance switching in an organic material: from bulk to monolayer0 aConductance switching in an organic material from bulk to monola cSEP a9831-98350 v233 a

Fluorescein sodium, which does not exhibit electrical bistability in thin films, can be switched to a high conducting state by the introduction of carbon nanotubes as channels for carrier transport. Thin films based on fluorescein sodium/carbon nanotubes display memory switching phenomenon among a low conducting state and several high conducting states. Read-only and random-access memory applications between the states resulted in multilevel memory in these systems. Results in thin films and in a monolayer (deposited via layer-by-layer assembly) show that instead of different molecular conformers, multilevel conducting states arise from the different density of high conducting fluorescein molecules.

1 aRath, Arup, Kumar1 aPal, Amlan, J. uhttps://library.ncl.res.in/content/conductance-switching-organic-material-bulk-monolayer02092nas a2200253 4500008004100000245007200041210006900113260000800182300001400190490000600204520132000210653002101530653001401551653002401565653001601589653001701605100001801622700001701640700001901657700001801676700002201694700001901716856010301735 2022 eng d00aCdSe quantum dot-based nanocomposites for ultralow-power memristors0 aCdSe quantum dotbased nanocomposites for ultralowpower memristor cJUN a8502-85100 v53 a

The explosion in digital communication with the huge amount of data and the internet of things (IoT) led to the increasing demand for data storage technology with faster operation speed, high-density stacking, nonvolatility, and low power consumption for saving energy. Metal chalcogenide-based quantum dots (QDs) show excellent nonvolatile resistive memory behavior owing to their tunable electronic states and control in trap states by passivating the surface with different ligands. Here, we synthesized high-quality colloidal monodispersed CdSe QDs by the hot injection method. The CdSe QDs were blended with an organic polymer, poly(4-vinylpyridine) (PVP), to fabricate an Al\textbackslashCdSe-PVP\textbackslashAl device. Our device shows excellent bipolar nonvolatile resistive random access memory (RRAM) switching behavior with a high current ON/OFF ratio (I-ON/OFF) of 6.1 x 10(4), and it consumes ultralow power. The charge trapping and detrapping in the potential well formed by the CdSe QD and PVP combination result in resistive switching. This CdSe-PVP-based resistive random access memory (RRAM) device with a high I-ON/OFF, ultrafast switching speed, high endurance, low operating voltage, and long retention period can be used as a high-performance and ultralow-power memristive device.

10amemory switching10amemristor10ametal chalcogenides10anonvolatile10aquantum dots1 aBera, Jayanta1 aBetal, Atanu1 aSharma, Ashish1 aShankar, Uday1 aRath, Arup, Kumar1 aSahu, Satyajit uhttps://library.ncl.res.in/content/cdse-quantum-dot-based-nanocomposites-ultralow-power-memristors02185nas a2200193 4500008004100000022001400041245012500055210006900180260000800249300001100257490000800268520149100276100001801767700001701785700001901802700002201821700001901843856012901862 2022 eng d a0003-695100aColloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability0 aColloidal MoS2 quantum dots for highperformance low power resist cJUN a2535020 v1203 a

Conventional memory technologies are facing enormous problems with downscaling, and are hence unable to fulfill the requirement of big data storage generated by a huge explosion of digital information. A resistive random access memory device (RRAM) is one of the most emerging technologies for next-generation computing data storage owing to its high-density stacking, ultrafast switching speed, high non-volatility, multilevel data storage, low power consumption, and simple device structure. In this work, colloidal MoS2 quantum dots (QDs) embedded in an insulating matrix of poly-(4vinylpyridine) (PVP) were used as an active layer to fabricate a RRAM device. The MoS2 QDs-PVP based RRAM device reveals an excellent nonvolatile resistive switching (RS) behavior with a maximum current on-off ratio (I-ON/I-OFF) of 10(5). High endurance, long retention time, and successive ``write-read-erase-read'' cycles indicate high-performance RRAM characteristics. The ultimate power consumption by this RRAM device is considerably low for energy saving. In addition, the MoS2 QDs-PVP based device shows RS behavior even at 130 degrees C. High I-ON/I-OFF, low operating power, high endurance, long retention time, and excellent stability with temperatures reveal that the MoS2 QDs-PVP based device can be a promising candidate for high-performance low power RRAM devices that can be operated at relatively higher temperatures. Published under an exclusive license by AIP Publishing.

1 aBera, Jayanta1 aBetal, Atanu1 aSharma, Ashish1 aRath, Arup, Kumar1 aSahu, Satyajit uhttps://library.ncl.res.in/content/colloidal-mos2-quantum-dots-high-performance-low-power-resistive-memory-devices-excellent