01354nas a2200205   4500008004100000022001400041245006900055210006900124260007300193300001200266490000800278520063500286100002000921700001700941700002200958700002400980700002401004700001901028856010101047       2016                        eng d  a0009-261400aElectronic structure and properties of layered gallium telluride0 aElectronic structure and properties of layered gallium telluride  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY  a148-1540 v6513 a<p>Layer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X=S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by water splitting using visible light provides a promising way for solar energy conversion, both theoretical and experimental studies have been carried out on the photochemical hydrogen evolution by GaTe. We also present the Raman spectra of GaTe examined by both theory and experiment. (C) 2016 Elsevier B.V. All rights reserved.</p>1 aShenoy, Sandhya1 aGupta, Uttam1 aNarang, Deepa, S.1 aLate, Dattatray, J.1 aWaghmare, Umesh, V.1 aRao, C., N. R.  uhttps://library.ncl.res.in/content/electronic-structure-and-properties-layered-gallium-telluride01746nas a2200181   4500008004100000245007300041210006900114260000800183300002700191490000800218520112800226100002401354700002001378700002201398700002001420700001901440856010501459       2016                        eng d00aThickness tunable transport in alloyed WSSe field effect transistors0 aThickness tunable transport in alloyed WSSe field effect transis  cOCT  aArticle Number: 1421010 v1093 aWe report the field effect transistor characteristics of exfoliated transition metal dichalcogenide alloy tungsten sulphoselenide. WSSe is a layered material of strongly bonded S-W-Se atoms having weak interlayer van der Waals forces with a significant potential for spintronic and valleytronic applications due to its polar nature. The X-ray photoelectron spectroscopy measurements on crystals grown by the chemical vapor transport method indicate a stoichiometry of the form WSSe. We report flake thickness tunable transport mechanism with n-type behavior in thin flakes (<= 11 nm) and ambipolarity in thicker flakes. The devices with flake thicknesses of 2.4 nm-54.8nm exhibit a maximum electron mobility of similar to 50 cm(2)/V s along with an I-ON/I-OFF ratio > 10(6). The electron Schottky barrier height values of 35 meV and 52meV extracted from low temperature I-V measurements for 3.9 nm and 25.5 nm thick flakes, respectively, indicate that an increase in hole current with thickness is likely due to lowering of the bandgap through an increase in energy of the valence band maximum. Published by AIP Publishing.1 aKarande, Shruti, D.1 aKaushik, Naveen1 aNarang, Deepa, S.1 aLate, Dattatray1 aLodha, Saurabh  uhttps://library.ncl.res.in/content/thickness-tunable-transport-alloyed-wsse-field-effect-transistors