01354nas a2200205   4500008004100000022001400041245006900055210006900124260007300193300001200266490000800278520063500286100002000921700001700941700002200958700002400980700002401004700001901028856010101047       2016                        eng d  a0009-261400aElectronic structure and properties of layered gallium telluride0 aElectronic structure and properties of layered gallium telluride  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY  a148-1540 v6513 a<p>Layer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X=S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by water splitting using visible light provides a promising way for solar energy conversion, both theoretical and experimental studies have been carried out on the photochemical hydrogen evolution by GaTe. We also present the Raman spectra of GaTe examined by both theory and experiment. (C) 2016 Elsevier B.V. All rights reserved.</p>1 aShenoy, Sandhya1 aGupta, Uttam1 aNarang, Deepa, S.1 aLate, Dattatray, J.1 aWaghmare, Umesh, V.1 aRao, C., N. R.  uhttps://library.ncl.res.in/content/electronic-structure-and-properties-layered-gallium-telluride