02464nas a2200301   4500008004100000022001400041245005800055210005800113260007300171300001200244490000800256520158500264653001301849653000901862653002201871653000801893653000801901653000801909653002101917100002001938700001801958700001901976700002001995700001802015700002202033700002102055856008602076       2006                        eng d  a0022-024800aEffect of annealing on properties of ZrSe2 thin films0 aEffect of annealing on properties of ZrSe2 thin films  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP  a254-2590 v2943 a<p>Thin films of ZrSe2 have been prepared on stainless steel and fluorine-doped tin oxide-coated glass substrates using electrodeposition technique at potentiostatic mode. Double-distilled water containing precursors Zr and Se with ethylene diamine tetra-acetic acid disodium salt as a complexing agent was used to obtain good quality deposits by controlling the rate of reaction. The preparative parameters such as concentration of bath, deposition time, bath temperature, pH of the bath and annealing temperature have been optimized using photoelectrochernical (PEC) technique. The films deposited at optimum preparative parameters are annealed at different temperatures. The film annealed at 200 degrees C shows more photosensitivity. The as-deposited and annealed films at 200 degrees C have been characterized by X-ray diffraction (XRD), energy dispersive analysis by X-ray (EDAX), optical absorption and scanning electron microscopy (SEM). The XRD analysis of the as-deposited and annealed films showed the presence of polycrystalline nature with hexagonal crystal structure. EDAX study reveals that deposited films are almost stoichiometric. Optical absorption study shows the presence of direct transition and band gap energies are found to be 1.5 and 1.38 eV, respectively, for the as-deposited and annealed films. SEM study revels that the grains are uniformly distributed over the surface of substrate for the as-deposited as well as annealed film, which indicates formation of good and compact type of crystal structure. (c) 2006 Elsevier B.V. All rights reserved.</p>10aband gap10aEDAX10aElectrodeposition10aPEC10aSEM10aXRD10aZrSe2 thin films1 aHankare, P., P.1 aAsabe, M., R.1 aKokate, A., V.1 aDelekar, S., D.1 aSathe, D., J.1 aMulla, Imtiaz, S.1 aChougule, B., K.  uhttps://library.ncl.res.in/content/effect-annealing-properties-zrse2-thin-films-002466nas a2200241   4500008004100000022001400041245008600055210006900141260010600210300001400316490000700330520159100337653001501928653002201943100001901965700001801984700002002002700001902022700002202041700002002063700002102083856012002104       2006                        eng d  a0022-369700aPhotoelectrochemical properties of electrochemically deposited CdIn2S4 thin films0 aPhotoelectrochemical properties of electrochemically deposited C  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcNOV  a2331-23360 v673 a<p>Thin films of CdIn2S4 have been deposited on to stainless steel and fluorine-doped tin oxide (FTO)-coated glass substrates from aqueous acidic bath using an electrodeposition technique. Ethylene diamine tetra-acetic acid (EDTA) disodium salt is used as complexing agent to obtain good-quality deposits by controlling the rate of the reaction. The different preparative parameters like concentration of bath, deposition time, bath temperature, pH of the bath have been optimized by the photoelectrochemical (PEC) technique in order to get good-quality photosensitive material. Different techniques have been used to characterize CdIn2S4 thin films. Optical absorption shows the presence of direct transition with band gap energy 2.17 eV. The X-ray diffraction (XRD) analysis of the as-deposited and annealed films showed the presence of polycrystalline nature. Energy-dispersive analysis by X-ray (EDAX) study for the sample deposited at optimized preparative parameters shows that the In-to-Cd ratio is almost 2 and S-to-Cd ratio is almost 4. Scanning electron microscopy (SEM) for samples deposited at optimized preparative parameters reveals that spherical grains are uniformly distributed over the surface of the substrate indicates the well-defined growth of polycrystalline CdIn2S4 thin film. PEC characterization of the films is carried out by studying photoresponse, spectral response and photovoltaic output characteristics. The fill factor (ff) and power conversion efficiency (eta) of the cell are 69 and 2.94%, respectively. (c) 2006 Elsevier Ltd. All rights reserved.</p>10aThin films10aX-ray diffraction1 aKokate, A., V.1 aAsabe, M., R.1 aDelekar, S., D.1 aGavali, L., V.1 aMulla, Imtiaz, S.1 aHankare, P., P.1 aChougule, B., K.  uhttps://library.ncl.res.in/content/photoelectrochemical-properties-electrochemically-deposited-cdin2s4-thin-films-0