02023nas a2200241   4500008004100000022001400041245010300055210006900158260007400227300001200301490000700313520114200320653002001462653002101482653001901503653002601522653002301548100002201571700002001593700002001613700001901633856012901652       2005                        eng d  a1385-344900aCharacterization of barium titanate: BaTiO3 (BT) ceramics prepared from sol-gel derived BT powders0 aCharacterization of barium titanate BaTiO3 BT ceramics prepared   aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcNOV  a103-1080 v153 a<p>Sol-gel synthesis was attempted at room temperature by adding drop wise a clear solution (made by reacting BaCO3 with glacial acetic acid) to an equi-molar solution of titanium tetrabutoxide in isopropanol (IPA) and acetic acid. The gelation occurred within 30 minutes. The as-dried gel was calcined at 750 degrees C/6 h in air to obtain carbon free BaTiO3 powders. The resulting BT powders were further pressed into pellets and sintered at 1280 degrees C/4 h in air to get dense ceramics (density similar to 94%). XRD and SEM techniques were used for phase and microstructure analysis respectively. The room temperature relative permittivity (e) of 1280 increased to 7200 (at Curie temperature of 127 degrees C) at 1 kHz frequency. The dissipation factor (tan delta) similar to 1.6% was observed in these samples. Also, the ferroelectric properties such as spontaneous polarization (Ps similar to 13 mu C/cm(2)), coercive field (E-c similar to 4.0 kV/cm) and dielectric strength (similar to 34 kV/cm) are estimated for these samples. These performance parameters are compared with the available standard data from the literature.</p>10abarium titanate10aferroelectricity10aMicrostructure10arelative permittivity10asol-gel processing1 aDeshpande, S., B.1 aGodbole, P., D.1 aKhollam, Y., B.1 aPotdar, H., S.  uhttps://library.ncl.res.in/content/characterization-barium-titanate-batio3-bt-ceramics-prepared-sol-gel-derived-bt-powders-001535nas a2200241   4500008004100000022001400041245011800055210006900173260007300242300001400315490000700329520064600336653002400982653001901006653003601025653001401061100002001075700001401095700001701109700002001126700001801146856012901164       2005                        eng d  a0167-577X00aDeposition and characterization of silver nano-films by a novel solid liquid interface reaction technique (SLIRT)0 aDeposition and characterization of silver nanofilms by a novel s  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcJUN  a1958-19610 v593 a<p>Solid-liquid interface reaction technique (SLIRT) is used to deposit silver film on glass substrate. The solid film of silver nitrate is formed by modified spin coating method. This film is subsequently processed by dipping it in a reducing solution so as to initiate a reaction at the interface and ultimately transform it to totally silver film. In situ transformation of silver nitrate to silver is studied with respect to time spectrophotometrically. The characterization of silver film is done by various physicochemical techniques namely XRD, XPS, ED, TEM and UV visible spectroscopy. (c) 2005 Elsevier B.V. All rights reserved.</p>10aElectron microscopy10aNano-Particles10asolid-liquid interface reaction10athin film1 aGodbole, P., D.1 aMitra, A.1 aPasricha, R.1 aMandale, A., B.1 aPatil, K., R.  uhttps://library.ncl.res.in/content/deposition-and-characterization-silver-nano-films-novel-solid-liquid-interface-reaction-001682nas a2200277   4500008004100000022001400041245004800055210004800103260006900151300001400220490000800234520082400242653001901066653002001085653003301105653001401138100002201152700002401174700002301198700002301221700001901244700002001263700002001283700002101303856008001324       2006                        eng d  a0040-609000aField emission from oriented tin oxide rods0 aField emission from oriented tin oxide rods  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcDEC  a1450-14540 v5153 a<p>Tin oxide (SnO2) films were grown on silicon substrates by a wet chemical route. It was found from scanning electron microscopy investigations that oriented SnO2 rods normal to the substrates were obtained. Field emission studies were carried out in diode configuration in an all metal ultra high vacuum chamber at a base pressure similar to 1.33 x 10(-8) mbar. The `onset' field required to draw 0.1 mu A/cm(2) current density from the emitter cathode was found to be similar to 3.4 V/mu m for SnO2 rods. The field emission current and applied field follows the Folwer-Nordheim relationship in low field regime. The observed results indicate that the field emission characteristics of chemically grown SnO2 structures are comparable to the vapor grown nanostructures. (c) 2006 Elsevier B.V. All rights reserved.</p>10afield emission10amicrostructures10ascanning electron microscopy10atin oxide1 aDeshpande, A., C.1 aKoinkar, Pankaj, M.1 aAshtaputre, S., S.1 aMore, Mahendra, A.1 aGosavi, S., W.1 aGodbole, P., D.1 aJoag, Dilip, S.1 aKulkarni, S., K.  uhttps://library.ncl.res.in/content/field-emission-oriented-tin-oxide-rods-0