01544nas a2200181   4500008004100000022001400041245007800055210006900133260007400202300001600276490000700292520085700299100002201156700002301178700002201201700002401223856011501247       2015                        eng d  a0957-452200aHigh performance single crystalline PbWO4 nanorod field effect transistor0 aHigh performance single crystalline PbWO4 nanorod field effect t  aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcDEC  a10044-100480 v263 a<p>The highly crystalline PbWO4 nanorods were synthesized using simple co-precipitation method which has application in field effect transistor. The synthesized PbWO4 nanorods were characterized by XRD, Raman spectroscopy, TEM and HRTEM indicating highly crystalline nature. Field effect transistor was fabricated on pre-patterned 300 nm SiO2/Si substrates using photolithography technique with channel length 1 A mu m and width 20 A mu m. Thin film (similar to 100 nm) was made up of PbWO4 nanorods by spin coating on the pre-patterned device used as channel layer. The field effect mobility was observed to be 4.7 cm(2) V-1 s(-1) and I-ON/OFF ratio similar to 10(3) which is far better than the organic molecules due to single crystalline nature and rod like morphology of the PbWO4 providing direct path for charges to transport towards channel.</p>1 aWalke, Pravin, S.1 aPatil, Vandana, B.1 aMulla, Imtiaz, S.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/high-performance-single-crystalline-pbwo4-nanorod-field-effect-transistor-0