01479nas a2200217   4500008004100000022001400041245008500055210006900140260008000209300001400289490000700303520067000310100002500980700002401005700002101029700002201050700002301072700002001095700003001115856011601145       2006                        eng d  a0957-448400aField emission studies of novel ZnO nanostructures in high and low field regions0 aField emission studies of novel ZnO nanostructures in high and l  aDIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcJUN  a2730-27350 v173 a<p>A study of the field emission characteristics of novel structures of ZnO, namely marigolds, multipods and microbelts, has been carried out in both the close proximity configuration and the conventional field emission microscope. The use of a conventional field emission microscope overcomes the drawback of arc formation at high field values. The nonlinearity in the Fowler - Nordheim ( F - N) plot, a characteristic feature of semiconductors has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability exhibited by these structures is also promising for future device applications.</p>1 aRamgir, Niranjan, S.1 aLate, Dattatray, J.1 aBhise, Ashok, B.1 aMulla, Imtiaz, S.1 aMore, Mahendra, A.1 aJoag, Dilip, S.1 aPillai, Vijayamohanan, K.  uhttps://library.ncl.res.in/content/field-emission-studies-novel-zno-nanostructures-high-and-low-field-regions-001611nas a2200277   4500008004100000022001400041245005900055210005800114260007300172300001400245490000800259520071800267653002400985653001901009653002901028653000901057653000901066100002101075700002401096700002501120700002301145700002201168700003001190700002001220856009301240       2007                        eng d  a0169-433200aField emission investigations of RuO2-doped SnO2 wires0 aField emission investigations of RuO2doped SnO2 wires  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP  a9159-91630 v2533 a<p>Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 x 10(4) A/cm(2) is drawn from the single wire emitter at an applied field of 8.46 x 10(4) V/mu m. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 LA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications. (c) 2007 Elsevier B.V. All rights reserved.</p>10adoped semiconductor10afield emission10afield enhancement factor10aRuO210aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aRamgir, Niranjan, S.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/field-emission-investigations-ruo2-doped-sno2-wires-0