02464nas a2200301 4500008004100000022001400041245005800055210005800113260007300171300001200244490000800256520158500264653001301849653000901862653002201871653000801893653000801901653000801909653002101917100002001938700001801958700001901976700002001995700001802015700002202033700002102055856008602076 2006 eng d a0022-024800aEffect of annealing on properties of ZrSe2 thin films0 aEffect of annealing on properties of ZrSe2 thin films aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP a254-2590 v2943 a

Thin films of ZrSe2 have been prepared on stainless steel and fluorine-doped tin oxide-coated glass substrates using electrodeposition technique at potentiostatic mode. Double-distilled water containing precursors Zr and Se with ethylene diamine tetra-acetic acid disodium salt as a complexing agent was used to obtain good quality deposits by controlling the rate of reaction. The preparative parameters such as concentration of bath, deposition time, bath temperature, pH of the bath and annealing temperature have been optimized using photoelectrochernical (PEC) technique. The films deposited at optimum preparative parameters are annealed at different temperatures. The film annealed at 200 degrees C shows more photosensitivity. The as-deposited and annealed films at 200 degrees C have been characterized by X-ray diffraction (XRD), energy dispersive analysis by X-ray (EDAX), optical absorption and scanning electron microscopy (SEM). The XRD analysis of the as-deposited and annealed films showed the presence of polycrystalline nature with hexagonal crystal structure. EDAX study reveals that deposited films are almost stoichiometric. Optical absorption study shows the presence of direct transition and band gap energies are found to be 1.5 and 1.38 eV, respectively, for the as-deposited and annealed films. SEM study revels that the grains are uniformly distributed over the surface of substrate for the as-deposited as well as annealed film, which indicates formation of good and compact type of crystal structure. (c) 2006 Elsevier B.V. All rights reserved.

10aband gap10aEDAX10aElectrodeposition10aPEC10aSEM10aXRD10aZrSe2 thin films1 aHankare, P., P.1 aAsabe, M., R.1 aKokate, A., V.1 aDelekar, S., D.1 aSathe, D., J.1 aMulla, Imtiaz, S.1 aChougule, B., K. uhttps://library.ncl.res.in/content/effect-annealing-properties-zrse2-thin-films-002466nas a2200241 4500008004100000022001400041245008600055210006900141260010600210300001400316490000700330520159100337653001501928653002201943100001901965700001801984700002002002700001902022700002202041700002002063700002102083856012002104 2006 eng d a0022-369700aPhotoelectrochemical properties of electrochemically deposited CdIn2S4 thin films0 aPhotoelectrochemical properties of electrochemically deposited C aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcNOV a2331-23360 v673 a

Thin films of CdIn2S4 have been deposited on to stainless steel and fluorine-doped tin oxide (FTO)-coated glass substrates from aqueous acidic bath using an electrodeposition technique. Ethylene diamine tetra-acetic acid (EDTA) disodium salt is used as complexing agent to obtain good-quality deposits by controlling the rate of the reaction. The different preparative parameters like concentration of bath, deposition time, bath temperature, pH of the bath have been optimized by the photoelectrochemical (PEC) technique in order to get good-quality photosensitive material. Different techniques have been used to characterize CdIn2S4 thin films. Optical absorption shows the presence of direct transition with band gap energy 2.17 eV. The X-ray diffraction (XRD) analysis of the as-deposited and annealed films showed the presence of polycrystalline nature. Energy-dispersive analysis by X-ray (EDAX) study for the sample deposited at optimized preparative parameters shows that the In-to-Cd ratio is almost 2 and S-to-Cd ratio is almost 4. Scanning electron microscopy (SEM) for samples deposited at optimized preparative parameters reveals that spherical grains are uniformly distributed over the surface of the substrate indicates the well-defined growth of polycrystalline CdIn2S4 thin film. PEC characterization of the films is carried out by studying photoresponse, spectral response and photovoltaic output characteristics. The fill factor (ff) and power conversion efficiency (eta) of the cell are 69 and 2.94%, respectively. (c) 2006 Elsevier Ltd. All rights reserved.

10aThin films10aX-ray diffraction1 aKokate, A., V.1 aAsabe, M., R.1 aDelekar, S., D.1 aGavali, L., V.1 aMulla, Imtiaz, S.1 aHankare, P., P.1 aChougule, B., K. uhttps://library.ncl.res.in/content/photoelectrochemical-properties-electrochemically-deposited-cdin2s4-thin-films-001730nas a2200169 4500008004100000022001400041245009900055210006900154260008000223300001400303490000700317520105200324100001801376700002201394700002101416856012301437 2007 eng d a0022-372700aFerroelectric and ferromagnetic properties of (x)BaTiO3+(1-x)Ni0.94Co0.01Cu0.05Fe2O4 composite0 aFerroelectric and ferromagnetic properties of xBaTiO31xNi094Co00 aDIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcAPR a1864-18680 v403 a

A group of elastically coupled ferroelectric and ferrite composites with the general formula (x) BaTiO3 + (1 - x) Ni0.94Co0.01Cu0.05Fe2O4 (where x = 0.85, 0.70 and 0.55) was prepared by the standard ceramic reaction method. The x-ray diffraction pattern of the composite reveals a spinel phase formation for the ferrite and perovskite phase formation for the ferroelectric phase without any other phase. The SEM micrographs were taken to determine the average grain size. The sintered composites exhibit typical hysteresis loops at room temperature. The effect of constituent phase variation on the hysteresis behaviour and the dielectric properties was examined. The parameters such as spontaneous polarization (P-s), breakdown voltage (E-b) and saturation magnetization (M-s) of the composites vary with the ferroelectric/ ferrite content. The temperature dependence of dielectric behaviour at a frequency of 1 kHz was also studied. With increasing content of BaTiO3, the dielectric constant increases and the Curie temperature decreases.

1 aDevan, R., S.1 aDeshpande, S., B.1 aChougule, B., K. uhttps://library.ncl.res.in/content/ferroelectric-and-ferromagnetic-properties-xbatio31-xni094co001cu005fe2o4-composite01883nas a2200265 4500008004100000022001400041245009000055210006900145260007300214300001400287490000800301520096900309653002401278653001201302653001801314653002201332100002001354700001801374700002001392700001901412700002201431700001901453700002101472856012401493 2009 eng d a0304-885300aMagnetic and dielectric properties of nanophase manganese-substituted lithium ferrite0 aMagnetic and dielectric properties of nanophase manganesesubstit aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcOCT a3270-32730 v3213 a

Nanocrystalline manganese-substituted lithium ferrites viz. Li0.5Fe2.5-xMnxO4 (2.5 <= x >= 0) were prepared by sol-gel autocombustion method. X-ray diffraction analysis confirmed that as the concentration of manganese increases the cubic phase changes to the tetragonal phase. The variation of saturation magnetization was studied as a function of manganese content. All the compositions indicate that they are ferrimagnetic in nature. The dielectric constant, dielectric loss tangent and ac conductivity of all samples were measured at room temperature as a function of frequency. These parameters decrease with increase in frequency for all of the samples. The substitution of manganese plays an important role in changing the structural and magnetic properties of these ferrites. The compositional variation of dielectric constant and d.c. resistivity shows an inverse trend of variation with each other. (C) 2009 Elsevier B.V. All rights reserved.

10adielectric constant10aFerrite10aMagnetization10aX-ray diffraction1 aHankare, P., P.1 aPatil, R., P.1 aSankpal, U., B.1 aJadhav, S., D.1 aMulla, Imtiaz, S.1 aJadhav, K., M.1 aChougule, B., K. uhttps://library.ncl.res.in/content/magnetic-and-dielectric-properties-nanophase-manganese-substituted-lithium-ferrite-001985nas a2200265 4500008004100000022001400041245014300055210006900198260006900267300001200336490000800348520101100356653002301367653001301390653001001403653003301413653002201446100002001468700001901488700002001507700002401527700002101551700002101572856012601593 2009 eng d a0925-838800aSynthesis, characterization and effect of sintering temperature on magnetic properties of MgNi ferrite prepared by co-precipitation method0 aSynthesis characterization and effect of sintering temperature o aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcMAY a926-9290 v4753 a

Mixed MgNi ferrites with composition Mg(0.5)Ni(0.5)Fe(2)O(4) where the mole fraction for Ni (x = 0, 0.25, 0.75, 0.5 and 1) were prepared by following co-precipitation method at temperature 110 degrees C and maintaining a pH of solution equal to 9.5 enable to achieve large particle surface area. The resultant materials obtained in powder form were sintered at different temperatures. Thermogravimetry (TGA), X-ray diffraction (XRD) and scanning electron microscopy, technique were applied to obtain structural parameters. The XRD patterns reveal the presence of(311) peak as the most intense one. The intensity of XRD peak increases with increase in sintering temperature. The saturation magnetization values showed increasing trend with increase in sintering temperature from 2.37 to 29.76 emu/g. These results along with the analysis of SEM micrographs are interpreted in terms of increase in particle grain size with increase in sintering temperature. (C) 2008 Elsevier B.V. All rights reserved.

10aChemical synthesis10aFerrites10aFT-IR10ascanning electron microscopy10aX-ray diffraction1 aHankare, P., P.1 aJadhav, S., D.1 aSankpal, U., B.1 aChavan, Santosh, S.1 aWaghmare, K., J.1 aChougule, B., K. uhttps://library.ncl.res.in/content/synthesis-characterization-and-effect-sintering-temperature-magnetic-properties-mgni-0