01681nas a2200277   4500008004100000022001400041245007500055210006900130260012500199300001100324490000700335520070000342653001101042653001101053653002301064653002601087653002301113653002401136653001201160100002501172700002401197700002001221700002401241700002901265856010901294       2009                        eng d  a0003-695100aEnhanced nonvolatile resistive switching in dilutely cobalt doped TiO20 aEnhanced nonvolatile resistive switching in dilutely cobalt dope  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScNOV  a2035020 v953 a<p>Incorporation of dilute concentration of dopant having a valence state different than that of the host cation enables controlled incorporation proximity vacancy defects for local charge balance. Since nonvolatile resistive switching is a phenomenon tied to such defects, it can be expected to be influenced by dilute doping. In this work, we demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature. We provide essential characterizations and analyses. We suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.</p>10acobalt10aDoping10amagnetic switching10arandom-access storage10atitanium compounds10avacancies (crystal)10avalency1 aBogle, Kashinath, A.1 aBachhav, Mukesh, N.1 aDeo, Meenal, S.1 aValanoor, Nagarajan1 aOgale, Satishchandra, B.  uhttps://library.ncl.res.in/content/enhanced-nonvolatile-resistive-switching-dilutely-cobalt-doped-tio2-001559nas a2200205   4500008004100000022001400041245011900055210006900174260012500243300002300368490000700391520070000398100002401098700001501122700001801137700002301155700002901178700001501207856013101222       2011                        eng d  a0003-695100aEvidence of lateral heat transfer during laser assisted atom probe tomography analysis of large band gap materials0 aEvidence of lateral heat transfer during laser assisted atom pro  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScAUG  aArticle No. 0841010 v993 a<p>Investigation of wustite (FeO), iron (Fe), and silicon (Si) specimens by infrared laser assisted three dimensional atom probe tomography shows evidence of confined surface absorption of the laser energy as the mechanism of laser assisted field evaporation for high band gap materials. The absorption region is shown to be located on the laser illumination side, close to the specimen apex. A simple model based on thermal diffusivity and spatial extent of the absorption region is derived and applied to the experimental results. The values of thermal diffusivity thus obtained are in good agreement with the published data. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622647]</p>1 aBachhav, Mukesh, N.1 aDanoix, R.1 aVurpillot, F.1 aHannoyer, Beatrice1 aOgale, Satishchandra, B.1 aDanoix, F.  uhttps://library.ncl.res.in/content/evidence-lateral-heat-transfer-during-laser-assisted-atom-probe-tomography-analysis-large-001374nas a2200241   4500008004100000022001400041245009000055210006900145260007300214300001200287490000800299520050700307653002600814653003700840653001200877100002400889700001500913700001500928700002300943700002900966700001800995856011901013       2011                        eng d  a0304-399100aInvestigation of wustite (Fe1-xO) by femtosecond laser assisted atom probe tomography0 aInvestigation of wustite Fe1xO by femtosecond laser assisted ato  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY  a584-5880 v1113 a<p>In this paper, we report results obtained from laser assisted three-dimensional (3-D) atom probe tomography (APT) on wustite (Fe1-xO). Oxides are generally insulating and hence hard to analyse in conventional electrical assisted APT. To overcome this problem, femtosecond laser pulses are used instead of voltage pulses. Here we discuss some aspects of pulsed laser field evaporation and optimization of parameters to achieve better chemical accuracy. (C) 2010 Elsevier B.V. All rights reserved.</p>10aAtom probe tomography10aLaser assisted field evaporation10aWustite1 aBachhav, Mukesh, N.1 aDanoix, R.1 aDanoix, F.1 aHannoyer, Beatrice1 aOgale, Satishchandra, B.1 aVurpillot, F.  uhttps://library.ncl.res.in/content/investigation-wustite-fe1-xo-femtosecond-laser-assisted-atom-probe-tomography-0