02033nas a2200205 4500008004100000022001400041245009300055210006900148260007400217300001400291490000700305520127500312100002001587700001801607700001801625700002001643700002201663700002101685856012101706 2006 eng d a0957-452200aCharacterization of Cd1-xZnxSe thin films deposited at low temperature by chemical route0 aCharacterization of Cd1xZnxSe thin films deposited at low temper aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcDEC a1055-10630 v173 a

Optoelectronic technologically important pseudo-binary Cd1-xZnxSe thin films with a variable composition ( 0 < x < 1) has been developed by chemical bath deposition method. The objective to study growth kinetics, physical, microscopic, compositional, optical, electrical and structural changes. Cd1-xZnxSe have been deposited on non-conducting glass substrate in tartarate bath containing Cd+2 and Zn+2 ions with sodium selenosulphate with an aqueous alkaline medium at 278 K. The quality and the thickness of the films are depends upon deposition temperature, deposition time and pH, etc. X-ray diffraction (XRD), atomic absorption spectroscopy, optical absorption, scanning electron microscopy and thermoelectric technique characterized the films. The XRD study indicates the polycrystalline nature in single cubic phase over whole range of composition. Analysis of absorption spectra gave direct type band gap, the magnitude of which increases non-linearly as zinc content in the film is increased and dc electrical conductivity at room temperature was found to decreases from 10(-7) to 10(-8) (Omega cm)(-1). All the films show n-type conductivity. The promising features observed are the formation of continuous solid solutions in a single cubic phase.

1 aHankare, P., P.1 aChate, P., A.1 aAsabe, M., R.1 aDelekar, S., D.1 aMulla, Imtiaz, S.1 aGaradkar, K., M. uhttps://library.ncl.res.in/content/characterization-cd1-xznxse-thin-films-deposited-low-temperature-chemical-route-002464nas a2200301 4500008004100000022001400041245005800055210005800113260007300171300001200244490000800256520158500264653001301849653000901862653002201871653000801893653000801901653000801909653002101917100002001938700001801958700001901976700002001995700001802015700002202033700002102055856008602076 2006 eng d a0022-024800aEffect of annealing on properties of ZrSe2 thin films0 aEffect of annealing on properties of ZrSe2 thin films aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP a254-2590 v2943 a

Thin films of ZrSe2 have been prepared on stainless steel and fluorine-doped tin oxide-coated glass substrates using electrodeposition technique at potentiostatic mode. Double-distilled water containing precursors Zr and Se with ethylene diamine tetra-acetic acid disodium salt as a complexing agent was used to obtain good quality deposits by controlling the rate of reaction. The preparative parameters such as concentration of bath, deposition time, bath temperature, pH of the bath and annealing temperature have been optimized using photoelectrochernical (PEC) technique. The films deposited at optimum preparative parameters are annealed at different temperatures. The film annealed at 200 degrees C shows more photosensitivity. The as-deposited and annealed films at 200 degrees C have been characterized by X-ray diffraction (XRD), energy dispersive analysis by X-ray (EDAX), optical absorption and scanning electron microscopy (SEM). The XRD analysis of the as-deposited and annealed films showed the presence of polycrystalline nature with hexagonal crystal structure. EDAX study reveals that deposited films are almost stoichiometric. Optical absorption study shows the presence of direct transition and band gap energies are found to be 1.5 and 1.38 eV, respectively, for the as-deposited and annealed films. SEM study revels that the grains are uniformly distributed over the surface of substrate for the as-deposited as well as annealed film, which indicates formation of good and compact type of crystal structure. (c) 2006 Elsevier B.V. All rights reserved.

10aband gap10aEDAX10aElectrodeposition10aPEC10aSEM10aXRD10aZrSe2 thin films1 aHankare, P., P.1 aAsabe, M., R.1 aKokate, A., V.1 aDelekar, S., D.1 aSathe, D., J.1 aMulla, Imtiaz, S.1 aChougule, B., K. uhttps://library.ncl.res.in/content/effect-annealing-properties-zrse2-thin-films-001672nas a2200217 4500008004100000022001400041245008400055210006900139260010600208300001400314490000700328520086000335653001801195653002501213100002001238700001801258700002001276700001801296700002201314856011801336 2006 eng d a0022-369700aNovel chemical synthetic route and characterization of zinc selenide thin films0 aNovel chemical synthetic route and characterization of zinc sele aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcNOV a2310-23150 v673 a

Zinc selenide (ZnSe) thin film have been deposited using chemical bath method on non-conducting glass substrate in a tartarate bath containing zinc sulfate, ammonia, hydrazine hydrate, sodium selenosulfate in an aqueous alkaline medium at 333 K. The deposition parameter of the ZnSe thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, electrical measurements, atomic absorption spectroscopy (AAS). The ZnSe thin layers grown with polycrystalline zinc blende system along with some amorphous phase present in ZnSe film. The direct optical band gap `E-g' for the film was found to be 2.81 eV and electrical conductivity in the order of 10(-8)(Omega cm)(-1) with n-type conduction mechanism. (c) 2006 Elsevier Ltd. All rights reserved.

10achalcogenides10aelectronic materials1 aHankare, P., P.1 aChate, P., A.1 aDelekar, S., D.1 aAsabe, M., R.1 aMulla, Imtiaz, S. uhttps://library.ncl.res.in/content/novel-chemical-synthetic-route-and-characterization-zinc-selenide-thin-films-002466nas a2200241 4500008004100000022001400041245008600055210006900141260010600210300001400316490000700330520159100337653001501928653002201943100001901965700001801984700002002002700001902022700002202041700002002063700002102083856012002104 2006 eng d a0022-369700aPhotoelectrochemical properties of electrochemically deposited CdIn2S4 thin films0 aPhotoelectrochemical properties of electrochemically deposited C aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcNOV a2331-23360 v673 a

Thin films of CdIn2S4 have been deposited on to stainless steel and fluorine-doped tin oxide (FTO)-coated glass substrates from aqueous acidic bath using an electrodeposition technique. Ethylene diamine tetra-acetic acid (EDTA) disodium salt is used as complexing agent to obtain good-quality deposits by controlling the rate of the reaction. The different preparative parameters like concentration of bath, deposition time, bath temperature, pH of the bath have been optimized by the photoelectrochemical (PEC) technique in order to get good-quality photosensitive material. Different techniques have been used to characterize CdIn2S4 thin films. Optical absorption shows the presence of direct transition with band gap energy 2.17 eV. The X-ray diffraction (XRD) analysis of the as-deposited and annealed films showed the presence of polycrystalline nature. Energy-dispersive analysis by X-ray (EDAX) study for the sample deposited at optimized preparative parameters shows that the In-to-Cd ratio is almost 2 and S-to-Cd ratio is almost 4. Scanning electron microscopy (SEM) for samples deposited at optimized preparative parameters reveals that spherical grains are uniformly distributed over the surface of the substrate indicates the well-defined growth of polycrystalline CdIn2S4 thin film. PEC characterization of the films is carried out by studying photoresponse, spectral response and photovoltaic output characteristics. The fill factor (ff) and power conversion efficiency (eta) of the cell are 69 and 2.94%, respectively. (c) 2006 Elsevier Ltd. All rights reserved.

10aThin films10aX-ray diffraction1 aKokate, A., V.1 aAsabe, M., R.1 aDelekar, S., D.1 aGavali, L., V.1 aMulla, Imtiaz, S.1 aHankare, P., P.1 aChougule, B., K. uhttps://library.ncl.res.in/content/photoelectrochemical-properties-electrochemically-deposited-cdin2s4-thin-films-001795nas a2200241 4500008004100000022001400041245011600055210006900171260010600240300001400346490000700360520089600367653000801263100002001271700002001291700001801311700001801329700001801347700002001365700002101385700002001406856012701426 2006 eng d a0022-369700aSynthesis of cadmium selenide thin films at low-temperature by simple chemical route and their characterization0 aSynthesis of cadmium selenide thin films at lowtemperature by si aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcDEC a2506-25110 v673 a

Crystalline CdSe thin film has been deposited using appropriate precursor solution containing cadmium sulfate octahydrate, tartaric acid, potassium hydroxide, ammonia and sodium selenosulfate. The effect of parameters such as bath composition, deposition temperature, pH of the solution, speed of the rotation and the specificity of complexing agent on growth process is studied. The `as-deposited' CdSe thin film was found to be red in color, specularly reflective and well adherent to the glass substrate. The crystalline phase of the deposited sample was hexagonal wurtzite-type. The analysis of optical absorption data shows energy band gap energy (E-g) 2.01 eV. The morphological study and compositional analysis of film sample have been discussed. The electrical resistivity of CdSe thin film was found to the order of 10(6) Omega cm. (c) 2006 Elsevier Ltd. All rights reserved.

10aXRD1 aHankare, P., P.1 aDelekar, S., D.1 aAsabe, M., R.1 aChate, P., A.1 aBhuse, V., M.1 aKhomane, A., S.1 aGaradkar, K., M.1 aSarwade, B., D. uhttps://library.ncl.res.in/content/synthesis-cadmium-selenide-thin-films-low-temperature-simple-chemical-route-and-their-002173nas a2200229 4500008004100000022001400041245010300055210006900158260010600227300001200333490000700345520131000352653002301662653001801685100001801703700001801721700002001739700002101759700002201780700002001802856012101822 2008 eng d a0022-369700aSynthesis, characterization of chemically deposited indium selenide thin films at room temperature0 aSynthesis characterization of chemically deposited indium seleni aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcJAN a249-2540 v693 a

Polycrystalline In2Se3 semiconducting thin films were prepared by using relatively simple chemical bath deposition method at room temperature by the reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium. Various preparative conditions of thin film deposition are outlined. The as grown films were found to be transparent, uniform, well adherent and red in color. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, atomic absorption spectroscopy and energy dispersive atomic X-ray diffraction (EDAX). The XRD analysis of the film showed the presence of polycrystalline nature with hexagonal crystal structure. SEM study revels that the grains are homogenous, without cracks or pinholes and well covers the glass substrate. The optical absorption and electrical conductivity was measured. The direct optical band gap value for the films was found to be of the order of 2.35eV at room temperature and have specific electrical conductivity of the order of 10(-2) (Omega cm)(-1) showing n-type conduction mechanism. The utility of the adapted technique is discussed from the view-point of applications considering the optoelectric and structural data. (c) 2007 Elsevier Ltd. All rights reserved.

10aChemical synthesis10aSemiconductor1 aAsabe, M., R.1 aChate, P., A.1 aDelekar, S., D.1 aGaradkar, K., M.1 aMulla, Imtiaz, S.1 aHankare, P., P. uhttps://library.ncl.res.in/content/synthesis-characterization-chemically-deposited-indium-selenide-thin-films-room-001635nas a2200253 4500008004100000022001400041245009400055210006900149260006900218300001200287490000800299520075400307653001901061653001901080653001501099653002201114100002001136700001901156700002101175700001801196700002201214700002001236856012501256 2010 eng d a0925-838800aSynthesis and characterization of nickel selenide thin films deposited by chemical method0 aSynthesis and characterization of nickel selenide thin films dep aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcFEB a228-2310 v4903 a

Nickel selenide thin films have been deposited using chemical bath method on non-conducting glass substrates in a tartarate bath containing nickel sulphate octahydrate, hydrazine hydrate, sodium seleno-sulphate in an aqueous alkaline medium. The grown films were uniform, well adherent and black in color. The films were characterized using X-ray diffraction, scanning electron microscopy, optical absorption and electrical measurements. The nickel selenide thin film revealed polycrystalline nature with hexagonal system. The direct optical band gap of the film was found to be 1.61 eV. Electrical resistivity of film was observed in the order of 10(3) (Omega cm) with p-type conduction mechanism. (C) 2009 Elsevier B.V. All rights reserved.

10aCrystal growth10aSemiconductors10aThin films10aX-ray diffraction1 aHankare, P., P.1 aJadhav, B., V.1 aGaradkar, K., M.1 aChate, P., A.1 aMulla, Imtiaz, S.1 aDelekar, S., D. uhttps://library.ncl.res.in/content/synthesis-and-characterization-nickel-selenide-thin-films-deposited-chemical-method-0