02466nas a2200241   4500008004100000022001400041245008600055210006900141260010600210300001400316490000700330520159100337653001501928653002201943100001901965700001801984700002002002700001902022700002202041700002002063700002102083856012002104       2006                        eng d  a0022-369700aPhotoelectrochemical properties of electrochemically deposited CdIn2S4 thin films0 aPhotoelectrochemical properties of electrochemically deposited C  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcNOV  a2331-23360 v673 a<p>Thin films of CdIn2S4 have been deposited on to stainless steel and fluorine-doped tin oxide (FTO)-coated glass substrates from aqueous acidic bath using an electrodeposition technique. Ethylene diamine tetra-acetic acid (EDTA) disodium salt is used as complexing agent to obtain good-quality deposits by controlling the rate of the reaction. The different preparative parameters like concentration of bath, deposition time, bath temperature, pH of the bath have been optimized by the photoelectrochemical (PEC) technique in order to get good-quality photosensitive material. Different techniques have been used to characterize CdIn2S4 thin films. Optical absorption shows the presence of direct transition with band gap energy 2.17 eV. The X-ray diffraction (XRD) analysis of the as-deposited and annealed films showed the presence of polycrystalline nature. Energy-dispersive analysis by X-ray (EDAX) study for the sample deposited at optimized preparative parameters shows that the In-to-Cd ratio is almost 2 and S-to-Cd ratio is almost 4. Scanning electron microscopy (SEM) for samples deposited at optimized preparative parameters reveals that spherical grains are uniformly distributed over the surface of the substrate indicates the well-defined growth of polycrystalline CdIn2S4 thin film. PEC characterization of the films is carried out by studying photoresponse, spectral response and photovoltaic output characteristics. The fill factor (ff) and power conversion efficiency (eta) of the cell are 69 and 2.94%, respectively. (c) 2006 Elsevier Ltd. All rights reserved.</p>10aThin films10aX-ray diffraction1 aKokate, A., V.1 aAsabe, M., R.1 aDelekar, S., D.1 aGavali, L., V.1 aMulla, Imtiaz, S.1 aHankare, P., P.1 aChougule, B., K.  uhttps://library.ncl.res.in/content/photoelectrochemical-properties-electrochemically-deposited-cdin2s4-thin-films-001778nas a2200229   4500008004100000022001400041245008200055210006900137260007400206300001200280490000700292520097400299100002001273700001901293700001801312700001901330700001901349700002401368700002101392700002201413856011301435       2011                        eng d  a0957-452200aPhotoelectrochemical applications of In2Se3 thin films by chemical deposition0 aPhotoelectrochemical applications of In2Se3 thin films by chemic  aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcAPR  a359-3640 v223 a<p>Indium selenide films have been synthesized by chemical bath deposition method onto stainless steel plate. The configuration of fabricated cell is n-In2Se3| NaOH(1 M) + S(1 M) + Na2S(1 M) |C-(graphite). Characterization of the photoelectrochemical cell was carried out by studying X-ray diffraction, current-voltage and capacitance-voltage characteristics in the dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that the In2Se3 thin films are n-type semiconductor. The junction ideality factor was found to be 3.24. The flat band potential and the barrier height were found to be 0.720 V and 0.196 eV, respectively. From the study of power output characteristics, open circuit voltage, short circuit current, fill factor and efficiency were found to be 310 mV, 20 mu A, 37.64 and 0.61%, respectively. Photoresponse studies show that the lighted ideality factor is 2.78. Maximum current was observed at 575 nm.</p>1 aHankare, P., P.1 aRathod, K., C.1 aAsabe, M., R.1 aJadhav, A., V.1 aHelavi, V., B.1 aChavan, Santosh, S.1 aGaradkar, K., M.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/photoelectrochemical-applications-in2se3-thin-films-chemical-deposition-0