01646nas a2200241   4500008004100000022001400041245009700055210006900152260006900221300001000290490000800300520079800308653001201106653002301118653001501141653002201156100002001178700001901198700001801217700001901235700002201254856012801276       2010                        eng d  a0925-838800aPreparation and characterization of CuInSe2 thin films by chemical bath deposition technique0 aPreparation and characterization of CuInSe2 thin films by chemic  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcJUN  a78-810 v5003 a<p>Copper indium diselenide (CIS) thin films have been deposited using a precursor solution containing copper sulphate, indium trichoride, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at room temperature. The as grown brown colored films were found to be well adherent to glass substrates. The films were characterized by X-ray diffraction, scanning electron microscopy, atomic absorption spectroscopy, optical absorption, electrical resistivity, and thermo electric measurement techniques. The analysis of optical absorption data shows band-gap energy (E-g) to be 1.1 eV. The electrical resistivity of the thin film was found to be of the order of 10(2) (Omega cm). Thermoelectric power measurement shows n-type conduction. (C) 2010 Published by Elsevier B.V.</p>10aCuInSe210aOptical properties10aThin films10aX-ray diffraction1 aHankare, P., P.1 aRathod, K., C.1 aChate, P., A.1 aJadhav, A., V.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/preparation-and-characterization-cuinse2-thin-films-chemical-bath-deposition-technique-001778nas a2200229   4500008004100000022001400041245008200055210006900137260007400206300001200280490000700292520097400299100002001273700001901293700001801312700001901330700001901349700002401368700002101392700002201413856011301435       2011                        eng d  a0957-452200aPhotoelectrochemical applications of In2Se3 thin films by chemical deposition0 aPhotoelectrochemical applications of In2Se3 thin films by chemic  aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcAPR  a359-3640 v223 a<p>Indium selenide films have been synthesized by chemical bath deposition method onto stainless steel plate. The configuration of fabricated cell is n-In2Se3| NaOH(1 M) + S(1 M) + Na2S(1 M) |C-(graphite). Characterization of the photoelectrochemical cell was carried out by studying X-ray diffraction, current-voltage and capacitance-voltage characteristics in the dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that the In2Se3 thin films are n-type semiconductor. The junction ideality factor was found to be 3.24. The flat band potential and the barrier height were found to be 0.720 V and 0.196 eV, respectively. From the study of power output characteristics, open circuit voltage, short circuit current, fill factor and efficiency were found to be 310 mV, 20 mu A, 37.64 and 0.61%, respectively. Photoresponse studies show that the lighted ideality factor is 2.78. Maximum current was observed at 575 nm.</p>1 aHankare, P., P.1 aRathod, K., C.1 aAsabe, M., R.1 aJadhav, A., V.1 aHelavi, V., B.1 aChavan, Santosh, S.1 aGaradkar, K., M.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/photoelectrochemical-applications-in2se3-thin-films-chemical-deposition-001740nas a2200205   4500008004100000022001400041245012100055210006900176260007400245300001400319490000700333520094800340100002001288700001801308700002001326700001801346700001901364700002201383856012901405       2011                        eng d  a0957-452200aSynthesis and characterization of cobalt substituted zinc ferri-chromites prepared by sol-gel auto-combustion method0 aSynthesis and characterization of cobalt substituted zinc ferric  aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcAUG  a1109-11150 v223 a<p>Mixed metal oxides having spinel structure shows interesting structural properties. In the present investigation, cobalt substituted zinc ferri-chromites were prepared by sol-gel auto-combustion method. The completion of solid state reaction and the formation of spinel phase were identified using X-ray diffraction technique. All the compounds exhibit cubic spinel symmetry and lattice constant shows an irregular trend with substitution of Co. Infra-red spectral studies shows an two strong bands, one around 600 cm(-1) which is attributed to the intrinsic vibrations of tetrahedral complexes and the other at 400 cm(-1) is due to octahedral one. The morphology and size of the particles was found out by scanning electron microscopy while the elemental compositions by elemental dispersive X-ray spectroscopy. The various compounds of the present system Zn1-xCoxFeCrO4 were also investigated for their thermal and electronic studies.</p>1 aHankare, P., P.1 aVader, V., T.1 aSankpal, U., B.1 aPatil, R., P.1 aJadhav, A., V.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/synthesis-and-characterization-cobalt-substituted-zinc-ferri-chromites-prepared-sol-gel-0