02264nas a2200277   4500008004100000022001400041245008700055210006900142260011000211300001400321490000600335520127700341100002401618700002001642700001701662700001801679700002801697700001901725700001801744700001601762700001801778700002301796700002401819700002201843856012101865       2016                        eng d  a2046-206900aField emission properties of highly ordered low-aspect ratio carbon nanocup arrays0 aField emission properties of highly ordered lowaspect ratio carb  aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcJAN  a9932-99390 v63 a<p>Herein, we design and develop a field emission device utilizing highly porous carbon nanocup (CNC) films. These three-dimensional (3D) low-aspect ratio CNC structures were fabricated by a combination of anodization and chemical vapor deposition techniques. The low turn-on fields of 2.30 V mu m(-1) were observed to draw an emission current density of 1 mu A cm(-2) and a maximum emission current density of similar to 1.802 mA cm(-2) drawn at an applied field of similar to 4.20 V mu m(-1). The enhanced field emission behavior observed from the CNC films is attributed to an excellent field enhancement factor of 1645. The observed field emission properties of CNC arrays are attributed to a synergistic combination of high aspect ratio, nano-sized radius of curvature, highly organized distribution of the emitters over the whole area of specimen and lower screening effect of the CNC arrays. These observations shed light on the effect of the stacking carbon layers of CNC on their electronic properties and open up possibilities to integrate new morphologies of graphitic carbon in nanotechnology applications. Thus, the low turn on field, high emission current density and better emission current stability enable CNC based future field emission applications.</p>1 aGupta, Bipin, Kumar1 aKedawat, Garima1 aKumar, Pawan1 aSingh, Satbir1 aSuryawanshi, Sachin, R.1 aAgrawal, Neetu1 aGupta, Govind1 aKim, Ah, Ra1 aGupta, R., K.1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aHahm, Myung, Gwan  uhttps://library.ncl.res.in/content/field-emission-properties-highly-ordered-low-aspect-ratio-carbon-nanocup-arrays-002321nas a2200313   4500008004100000022001400041245011600055210006900171260000800240300001100248490000600259520127500265100002401540700002001564700002501584700001901609700002801628700002401656700001801680700001701698700002801715700001901743700002301762700002301785700002301808700002201831700002401853856013001877       2018                        eng d  a2158-322600aHigh-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures0 aHighperformance field emission device utilizing vertically align  cJAN  a0151170 v83 a<p>The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 degrees C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm(-1) and D-band at 1340 cm(-1). The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm(2) at 1.2V/mu m), low turn-on field (0.6 V/mu m) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources. (c) 2018 Author(s).</p>1 aGupta, Bipin, Kumar1 aKedawat, Garima1 aGangwar, Amit, Kumar1 aNagpal, Kanika1 aKashyap, Pradeep, Kumar1 aSrivastava, Shubhda1 aSingh, Satbir1 aKumar, Pawan1 aSuryawanshi, Sachin, R.1 aSeo, Deok, Min1 aTripathi, Prashant1 aMore, Mahendra, A.1 aSrivastava, O., N.1 aHahm, Myung, Gwan1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/high-performance-field-emission-device-utilizing-vertically-aligned-carbon-nanotubes-based