01466nas a2200145   4500008004100000245008900041210006900130260008100199300001000280520083600290100002301126700002301149700002401172856012401196       2015                        eng d00aTransition metal di-chalcogenides and their nanocomposite prospective field emitters0 aTransition metal dichalcogenides and their nanocomposite prospec  aGuangzhou, Peoples R ChinabIEEE, 345 E 47th ST, New York, NY 10017 USAcJUL  a98-993 a<p>Layered structured transition metal di-chalcogenides has attracted researchers as a substitute of graphene and its forms for various applications. In an attempt to explore field emission properties of these graphene analogues, synthesis and field emission behaviour of a few layered transition metal di-chalcogenides (TMDs) VS2, MoS2, MoO3 have been investigated at a base pressure of 1x 10(-8) mbar. Furthermore, to improve the field emission properties, composites with RGO and respective oxides were synthesized and compared with the pristine ones. The TMDs and their composites is synthesized employing hydrothermal synthesis route. The preliminary results show that these TMD's and their composites, when synthesized in a controlled manner, can serve as potential field emitters for future field emission based devices.</p>1 aKhare, Ruchita, T.1 aMore, Mahendra, A.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/transition-metal-di-chalcogenides-and-their-nanocomposite-prospective-field-emitters02598nas a2200337   4500008004100000245008900041210006900130260000800199300001000207490000600217520154200223653002201765653001901787653001501806653001501821653000901836100002201845700002301867700002301890700002001913700001901933700002001952700002301972700002001995700001802015700002302033700003102056700003002087700002402117856011902141       2023                        eng d00aTitanium trisulfide nanosheets and nanoribbons for field emission- based nanodevices0 aTitanium trisulfide nanosheets and nanoribbons for field emissio  cJAN  a44-490 v63 a<p>
	The field emission (FE) properties of TiS3 nanosheets and nanoribbons, synthesized by direct sulfuration of bulk titanium, are investigated. The nanosheets show an enhanced FE behavior with a low turn-on field of similar to 0.3 V/ mu m, required for drawing an emission current density of similar to 10 mu A/cm2. Interestingly, the TiS3 nanosheet emitter delivered a large emission current density of similar to 0.9 mA/ cm2 at a relatively low applied electric field of similar to 0.4 V/mu m. We have estimated the values of the field enhancement factor (beta), which are found to be similar to 5 x 104 for the TiS3 nanosheet emitter and similar to 4 x 103 for the nanoribbon emitter. We attribute the superior FE performance to the presence of atomically sharp edges and the reduced thickness of TiS3, as reflected in the high value of beta. In fact, the nanosheet sample presents a higher density of ultrathin layers (similar to 12 nm-thick), and thus, they have a larger edge to volume ratio than the nanoribbon samples (which are similar to 19 nm-thick). The superior FE behavior of TiS3 nanosheets over nanoribbons makes them a propitious field emitter and can be utilized for various FE-based applications, demanding large emission currents and lower operational voltages. Moreover, the FE current stability recorded on these samples confirms their promising performance. Thus, the present investigation brings out a great promise of TiS3 nanosheets and nanoribbons as field emitters for vacuum nanoelectronics devices.</p>
10aCurrent stability10afield emission10ananoribbon10ananosheets10aTiS31 aPawbake, Amit, S.1 aKhare, Ruchita, T.1 aIsland, Joshua, O.1 aFlores, Eduardo1 aAres, Jose, R.1 aSanchez, Carlos1 aFerrer, Isabel, J.1 aPawar, Mahendra1 aFrank, Otakar1 aMore, Mahendra, A.1 avan der Zant, Herre, S. J.1 aCastellanos-Gomez, Andres1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/titanium-trisulfide-nanosheets-and-nanoribbons-field-emission-based-nanodevices