02650nas a2200253   4500008004100000022001400041245012100055210006900176260007100245300001400316490000600330520168600336653002202022653002102044653001802065653002402083653003602107100002802143700002502171700002202196700002502218700002302243856013002266       2014                        eng d  a1944-824400aVapor-liquid-solid growth of one-dimensional tin sulfide (sns) nanostructures with promising field emission behavior0 aVaporliquidsolid growth of onedimensional tin sulfide sns nanost  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcFEB  a2018-20250 v63 a<p>Single-crystalline ultralong tin sulfide (SnS) nanowires has been grown by a thermal evaporation technique under optimized conditions on gold-coated silicon substrates, and for the first time, field emission investigations on the SnS nanowires at the base pressure of 1 X 10(-8) mbar are reported. It has been revealed that the surface morphology of the as-synthesized SnS nanostructures is significantly influenced by the deposition temperature and duration. Structural and morphological analyses of as-synthesized SnS nanostructures have been carried out using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). To understand the optical and electronic properties of as-synthesized SnS nanowires, ultraviolet-visible (UV-vis), photo-luminescence (PL), and X-ray photoelectron spectroscopy (XPS) studies were carried out. The SEM and TEM measurements reveal the formation of ultralong SnS nanowires, with an average diameter of 80 nm. A plausible explanation on the vapor-solid-liquid (VLS) growth mechanism based on the experimental results and reported literature has been presented. Furthermore, the field emission characteristics of the SnS nanowires are found to be superior to the other metal chalcogenide nanostructures. The synthesized SnS nanowire emitter delivers a high current density of similar to 2.5 mA/cm(2) at an applied electric field of similar to 4.55 V/mu m. The emission current stability over a period of 6 h is observed to be good. The observed results demonstrate the potential of the SnS nanowire emitter as an electron source for practical applications in vacuum nano/microelectronic devices.</p>10aElectron emission10aID nanostructure10aSnS nanowires10athermal evaporation10avapor-liquid-solid (VLS) growth1 aSuryawanshi, Sachin, R.1 aWarule, Sambhaji, S.1 aPatil, Sandip, S.1 aPatil, Kashinath, R.1 aMore, Mahendra, A.  uhttps://library.ncl.res.in/content/vapor-liquid-solid-growth-one-dimensional-tin-sulfide-sns-nanostructures-promising-field-001851nas a2200181   4500008004100000022001400041245011700055210006900172260011000241300001600351490000600367520106400373100002801437700002501465700002301490700002401513856013201537       2015                        eng d  a2046-206900aVapour-liquid-solid growth of one-dimensional In2Se3 nanostructures and their promising field emission behaviour0 aVapourliquidsolid growth of onedimensional In2Se3 nanostructures  aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcJUL  a65274-652820 v53 a<p>Single crystalline ultra long In2Se3 nanowires have been grown by employing a single step facile thermal evaporation route under optimized conditions on Au/Si wafers, and morphology dependent field emission investigations on the In2Se3 nanostructure at the base pressure -1 x 10(-8) mbar are explored. In addition, structural and morphological analysis of as-synthesized In2Se3 nanostructures has been carried out using XRD, SEM and TEM. A plausible explanation of the vapor-solid-liquid (VLS) growth mechanism based on the experimental results and reported literature has been presented. Furthermore, field emission measurements demonstrate remarkably enhanced emission behaviour, which is explained on the basis of the field enhancement factor and aspect ratio of the nanostructures. The synthesized In25e3 nanowire emitter delivers a very high current density of -1.2 mA cm(-2) at an applied electric field of -6.33 cm(-1). The present results demonstrate In2Se3 as an important candidate for potential applications in nano/micro-electronic devices.</p>1 aSuryawanshi, Sachin, R.1 aBankar, Prashant, K.1 aMore, Mahendra, A.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/vapour-liquid-solid-growth-one-dimensional-in2se3-nanostructures-and-their-promising-field-0