02650nas a2200253 4500008004100000022001400041245012100055210006900176260007100245300001400316490000600330520168600336653002202022653002102044653001802065653002402083653003602107100002802143700002502171700002202196700002502218700002302243856013002266 2014 eng d a1944-824400aVapor-liquid-solid growth of one-dimensional tin sulfide (sns) nanostructures with promising field emission behavior0 aVaporliquidsolid growth of onedimensional tin sulfide sns nanost a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcFEB a2018-20250 v63 a

Single-crystalline ultralong tin sulfide (SnS) nanowires has been grown by a thermal evaporation technique under optimized conditions on gold-coated silicon substrates, and for the first time, field emission investigations on the SnS nanowires at the base pressure of 1 X 10(-8) mbar are reported. It has been revealed that the surface morphology of the as-synthesized SnS nanostructures is significantly influenced by the deposition temperature and duration. Structural and morphological analyses of as-synthesized SnS nanostructures have been carried out using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). To understand the optical and electronic properties of as-synthesized SnS nanowires, ultraviolet-visible (UV-vis), photo-luminescence (PL), and X-ray photoelectron spectroscopy (XPS) studies were carried out. The SEM and TEM measurements reveal the formation of ultralong SnS nanowires, with an average diameter of 80 nm. A plausible explanation on the vapor-solid-liquid (VLS) growth mechanism based on the experimental results and reported literature has been presented. Furthermore, the field emission characteristics of the SnS nanowires are found to be superior to the other metal chalcogenide nanostructures. The synthesized SnS nanowire emitter delivers a high current density of similar to 2.5 mA/cm(2) at an applied electric field of similar to 4.55 V/mu m. The emission current stability over a period of 6 h is observed to be good. The observed results demonstrate the potential of the SnS nanowire emitter as an electron source for practical applications in vacuum nano/microelectronic devices.

10aElectron emission10aID nanostructure10aSnS nanowires10athermal evaporation10avapor-liquid-solid (VLS) growth1 aSuryawanshi, Sachin, R.1 aWarule, Sambhaji, S.1 aPatil, Sandip, S.1 aPatil, Kashinath, R.1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/vapor-liquid-solid-growth-one-dimensional-tin-sulfide-sns-nanostructures-promising-field-001989nas a2200205 4500008004100000022001400041245011700055210006900172260011000241300001400351490000700365520114700372100002801519700002001547700002001567700002401587700002101611700002301632856012801655 2015 eng d a1466-803300a3D Hetero-architecture of GdB6 nanoparticles on lessened cubic Cu2O nanowires: enhanced field emission behaviour0 a3D Heteroarchitecture of GdB6 nanoparticles on lessened cubic Cu aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcMAR a3936-39440 v173 a

The field emission properties (FE) of a heteroarchitecture comprised of gadolinium hexaboride nanoparticles uniformly decorated over Cu2O nanoneedles (GdB6/Cu2O) have been investigated at the base pressure of similar to 1 x 10(-8) mbar. Under the optimized pulsed laser deposition (PLD), a well-adhered coating of GdB6 nanoparticles on chemically synthesized cuprous oxide (Cu2O) nanoneedles has been obtained. A plausible growth mechanism of the hierarchical assembly of GdB6 nanoparticles on the Cu2O nanoneedles is explained on the basis of structural analysis carried out using SEM and TEM. A low turn-on field of similar to 2.3 V mu m(-1) (to draw an emission current density similar to 1 mu A cm(-2)) is observed along with stable emission current at the preset value of similar to 2 mu A over 4 h. The enhanced emission behaviour of the GdB6/Cu2O heteroarchitecture, in contrast to the pristine Cu2O nanoneedles, is attributed to its high aspect ratio and low work function. The observed FE results demonstrate GdB6/Cu2O heteroarchitecture as a potential candidate for application in various vacuum nano/microelectronic devices.

1 aSuryawanshi, Sachin, R.1 aSingh, Anil, K.1 aDeo, Meenal, S.1 aLate, Dattatray, J.1 aSinha, Sucharita1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/3d-hetero-architecture-gdb6-nanoparticles-lessened-cubic-cu2o-nanowires-enhanced-field-001614nas a2200157 4500008004100000245006000041210005900101260008100160300001000241520101200251100002401263700002401287700002801311700002301339856009401362 2015 eng d00aBlack phosphorous nanosheets: prospective field emitter0 aBlack phosphorous nanosheets prospective field emitter aGuangzhou, Peoples R ChinabIEEE, 345 E 47th St, New York, NY 10017 USAcJUL a94-953 a

We report for the first time field electron emission investigations on few layered black phosphorous nanosheets emitter's synthesized using chemical method with thickness similar to 2-5 nm. The turn-on electric field required to draw an emission current density of similar to 10 mu A/cm(2) was found to be similar to 4.2 V/mu m. Furthermore, a few layer black phosphorous nanosheets emitter deliver an large emission current density of similar to 170 mu A/cm(2) at an applied field of similar to 7.5 V/mu m. The emission current versus time plot measured at the preset current values of similar to 5 mu A shows field emission current fluctuations within +/- 10% of the average value indicating the well stable nature of black phosphorous field emitter. Thus, the two dimensional black phosphorous nanosheets synthesized using simple electrochemical exfoliation method can be realized and utilized for the next generation micro/nanoelectronics and flat panel field emission based display applications.

1 aLate, Dattatray, J.1 aErande, Manisha, B.1 aSuryawanshi, Sachin, R.1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/black-phosphorous-nanosheets-prospective-field-emitter01721nas a2200217 4500008004100000022001400041245009000055210006900145260007700214300001400291520089900305653001901204653002201223653001901245653001501264100002401279700002801303700002301331700002401354856012501378 2015 eng d a1434-194800aElectrochemically exfoliated black phosphorus nanosheets - prospective field emitters0 aElectrochemically exfoliated black phosphorus nanosheets prospec aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcJUL a3102-31073 a

Herein we report field emission (FE) investigations on an electrochemically exfoliated few-layered black phosphorus nanosheet emitter at a base pressure of approximately 1x10(-8) mbar. The turn-on electric field required to draw an emission current density of approximately 10 A/cm(2) is found to be about 4.2 V/m. Furthermore, few-layered black phosphorus nanosheet emitters deliver an emission current density of about 170 A/cm(2) at an applied field of about 7.5 V/m. The emission current vs. time plot measured at preset current values of about 5 A shows emission current fluctuations within +/- 10% of the average value, indicating the highly stable nature of the black phosphorus field emitter. Thus, the 2D black phosphorus nanosheets synthesized using the simple electrochemical exfoliation method can be utilized for micro/nanoelectronics and flat panel FE display applications.

10afield emission10aLayered compounds10aNanostructures10aPhosphorus1 aErande, Manisha, B.1 aSuryawanshi, Sachin, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/electrochemically-exfoliated-black-phosphorus-nanosheets-prospective-field-emitters-001884nas a2200229 4500008004100000022001400041245009800055210006900153260011000222300001600332490000600348520097300354100002601327700002601353700002801379700002301407700001801430700002401448700002401472700002601496856013201522 2015 eng d a2046-206900aFacile synthesis of Ag nanowire-rGO composites and their promising field emission performance0 aFacile synthesis of Ag nanowirerGO composites and their promisin aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcAPR a41887-418930 v53 a

Crystalline, ultra long silver nanowires (Ag NWs), few-layered rGO (reduced graphene oxide) and their rGO-Ag NW nanocomposite have been synthesized using a polyol reflux technique under optimized experimental conditions. The field emission performance of the rGO-Ag NW nanocomposite, rGO and Ag NW emitters was investigated. The turn on field required to draw an emission current density of similar to 1 mA cm(-2) was found to be similar to 5.00, 3.92 and 2.40 V mu m(-1) for the Ag NW, rGO and rGO-Ag NW nanocomposite emitters, respectively. The combined contribution of the sharp edges of the thin graphene sheets and high aspect ratio of the Ag nanowires, and their synergetic effect in the rGO-Ag NW nanocomposite, are responsible for the enhanced field emission behavior. First-principles density functional calculations show that the enhanced field emission may also be due to the overlapping of the electronic structures of the Ag NWs and rGO nanosheets.

1 aSamantara, Aneeya, K.1 aMishra, Dillip, Kumar1 aSuryawanshi, Sachin, R.1 aMore, Mahendra, A.1 aThapa, Ranjit1 aLate, Dattatray, J.1 aJena, Bikash, Kumar1 aRout, Chandra, Sekhar uhttps://library.ncl.res.in/content/facile-synthesis-ag-nanowire-rgo-composites-and-their-promising-field-emission-performance-002541nas a2200229 4500008004100000022001400041245013000055210006900185260011000254300001600364490000600380520161200386100002801998700002002026700002302046700002202069700002302091700001802114700002602132700002402158856012902182 2015 eng d a2046-206900aPt-nanoparticle functionalized carbon nano-onions for ultra-high energy supercapacitors and enhanced field emission behaviour0 aPtnanoparticle functionalized carbon nanoonions for ultrahigh en aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcSEP a80990-809970 v53 a

In the present work, we have investigated the charge storage capacitive response and field emission behaviour of platinum (Pt) nanoparticles decorated on carbon nano onions (CNOs) and compared them with those of pristine carbon nano onions. The specific capacitance observed for Pt-CNOs is 342.5 F g(-1), about six times higher than that of pristine CNOs, at a scan rate of 100 mV s(-1). The decoration with Pt nanoparticles, without any binder or polymer separator on the CNO, leading to enhanced supercapacitance is due to easy accessibility of Na2SO4 electrolyte in the active material. The Density Functional Theory (DFT) calculations of these systems reveal enhancement in the Density of States (DOS) near the Fermi energy (E-F) on account of platinum decoration on the CNOs. Furthermore, the field emission current density of similar to 0.63 mA cm(-2) has been achieved from the Pt-CNOs emitter at an applied electric field of similar to 4.5 V mu m(-1) and from the pristine CNOs sample current density of similar to 0.4 mA cm(-2) has been achieved at an applied electric field of similar to 6.6 V mu m(-1). The observed enhanced field emission behavior has been attributed to the improved electrical conductivity and increased emitting sites of the Pt-CNO emitter. The field emission current stability of the Pt-CNO emitter over a longer duration is found to be good. The observed results imply multifunctional potential of Pt-CNOs, as supercapacitor material in various next generation hybrid energy storage devices, and field emitters for next generation vacuum nano/microelectronic devices.

1 aSuryawanshi, Sachin, R.1 aKaware, Vaibhav1 aChakravarty, Disha1 aWalke, Pravin, S.1 aMore, Mahendra, A.1 aJoshi, Kavita1 aRout, Chandra, Sekhar1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/pt-nanoparticle-functionalized-carbon-nano-onions-ultra-high-energy-supercapacitors-and-001580nas a2200241 4500008004100000022001400041245009800055210006900153260007300222300001000295490000800305520070800313653002501021653001901046653001001065653001901075100002801094700002201122700002201144700002401166700002301190856012501213 2015 eng d a0304-399100aSpectral analysis of the emission current noise exhibited by few layer WS2 nanosheets emitter0 aSpectral analysis of the emission current noise exhibited by few aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcFEB a51-570 v1493 a

Spectral analysis of the field emission (FE) current fluctuations has been carried out at the base pressure similar to 1 x 10(-8) mbar. The emission current stability investigated at preset value of 2 mu A is characterized by `step like fluctuation. The spectral analysis performed on a FFT (Fast Fourier Transform) analyzer revealed that the observed noise is of 1/f(alpha) type, with the value of alpha as similar to 1.05. The estimated value of alpha implies that the current fluctuations are mainly due the various processes occurring on atomic scale like adsorption, migration, and/or desorption of the residual gas species on the emitter surface. (C) 2014 Elsevier B.V. All rights reserved.

10aCurrent fluctuations10afield emission10aNoise10aWS2 nanosheets1 aSuryawanshi, Sachin, R.1 aKolhe, Pankaj, S.1 aRout, Chandra, S.1 aLate, Dattatray, J.1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/spectral-analysis-emission-current-noise-exhibited-few-layer-ws2-nanosheets-emitter-001851nas a2200181 4500008004100000022001400041245011700055210006900172260011000241300001600351490000600367520106400373100002801437700002501465700002301490700002401513856013201537 2015 eng d a2046-206900aVapour-liquid-solid growth of one-dimensional In2Se3 nanostructures and their promising field emission behaviour0 aVapourliquidsolid growth of onedimensional In2Se3 nanostructures aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcJUL a65274-652820 v53 a

Single crystalline ultra long In2Se3 nanowires have been grown by employing a single step facile thermal evaporation route under optimized conditions on Au/Si wafers, and morphology dependent field emission investigations on the In2Se3 nanostructure at the base pressure -1 x 10(-8) mbar are explored. In addition, structural and morphological analysis of as-synthesized In2Se3 nanostructures has been carried out using XRD, SEM and TEM. A plausible explanation of the vapor-solid-liquid (VLS) growth mechanism based on the experimental results and reported literature has been presented. Furthermore, field emission measurements demonstrate remarkably enhanced emission behaviour, which is explained on the basis of the field enhancement factor and aspect ratio of the nanostructures. The synthesized In25e3 nanowire emitter delivers a very high current density of -1.2 mA cm(-2) at an applied electric field of -6.33 cm(-1). The present results demonstrate In2Se3 as an important candidate for potential applications in nano/micro-electronic devices.

1 aSuryawanshi, Sachin, R.1 aBankar, Prashant, K.1 aMore, Mahendra, A.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/vapour-liquid-solid-growth-one-dimensional-in2se3-nanostructures-and-their-promising-field-002299nas a2200265 4500008004100000022001400041245012600055210006900181260007300250300001200323490000800335520132700343653001901670653002001689653001601709653001501725100002101740700002801761700002601789700002001815700002301835700002401858700002101882856013001903 2016 eng d a1387-181100aArchitecture of 2D MoS2 nanosheets and 3D CdMoS4 marigold flowers: consequence of annealing on field emission performance0 aArchitecture of 2D MoS2 nanosheets and 3D CdMoS4 marigold flower aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY a573-5790 v2253 a

Herein, we report the field electron emission investigations on template free solvothermally synthesized layered MoS2 nanosheets as well as novel phase of CdMoS4 nanoflowers at the base pressure of similar to 1 x 10(-8) mbar. The turn-on field, threshold field and maximum emission current densities for both MoS2 and CdMoS4 are strongly influenced by thermal annealing in inert atmosphere. The turn on field, required to draw emission current density of 1 mu A/cm(2) is found to be 5.8 and 3.2 V/mu m for pristine and annealed MoS2 at 400 degrees C. In case of as prepared and annealed CdMoS4 sample the turn on field values are found to be similar to 6.2 and 5.0 V/mu m, respectively. The emission current versus time (I-t) plot measured at the preset current values of similar to 1 mu A for pristine and annealed sample indicates stable operation of the emitter. The emission current fluctuations for annealed sample are observed to be less as compared with the pristine sample due to conditioning of the emitter, thereby showing highly stable nature of emitter. Thus, the present result demonstrates the potential of annealed MoS2 nanosheets and CdMoS4 nanoflowers as an emerging materials for micro/nanoelectronics and flat panel field emission display applications. (C) 2016 Elsevier Inc. All rights reserved.

10afield emission10aMoS2 and CdMoS410aNanoflowers10ananosheets1 aKadam, Sunil, R.1 aSuryawanshi, Sachin, R.1 aPanmand, Rajendra, P.1 aMate, Vivek, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aKale, Bharat, B. uhttps://library.ncl.res.in/content/architecture-2d-mos2-nanosheets-and-3d-cdmos4-marigold-flowers-consequence-annealing-field02336nas a2200253 4500008004100000022001400041245005400055210005400109260008100163300002700244490000600271520147600277653003101753653003001784653001901814653001801833100002801851700002201879700002401901700002401925700002301949700002401972856008601996 2016 eng d a2053-159100aEnhanced field emission behavior of layered MoSe20 aEnhanced field emission behavior of layered MoSe2 aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcMAR aArticle Number: 0350030 v33 a

Herein, we report one step facile chemical vapor deposition method for synthesis of single-layer MoSe2 nanosheets with average lateral dimension similar to 60 mu m on 300 nm SiO2/Si and n-type silicon substrates and field emission investigation of MoSe2/Si at the base pressure of similar to 1 x 10(-8) mbar. The morphological and structural analyses of the as-deposited single-layer MoSe2 nanosheets were carried out using an optical microscopy, Raman spectroscopy and atomic force microscopy. Furthermore, the values of turn-on and threshold fields required to extract an emission current densities of 1 and 10 mu A cm(-2), are found to be similar to 1.9 and similar to 2.3 V mu m(-1), respectively. Interestingly, the MoSe2 nanosheet emitter delivers maximum field emission current density of similar to 1.5 mA cm(-2) at a relatively lower applied electric field of similar to 3.9 V mu m(-1). The long term operational current stability recorded at the preset values of 35 mu A over 3 hr duration and is found to be very good. The observed results demonstrates that the layered MoSe2 nanosheet based field emitter can open up many opportunities for their potential application as an electron source in flat panel display, transmission electron microscope, and x-ray generation. Thus, the facile one step synthesis approach and robust nature of single-layer MoSe2 nanosheets emitter can provide prospects for the future development of practical electron sources.

10aatomically thin nanosheets10achemical vapor deposition10afield emission10alayered MoSe21 aSuryawanshi, Sachin, R.1 aPawbake, Amit, S.1 aPawar, Mahendra, S.1 aJadkar, Sandesh, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/enhanced-field-emission-behavior-layered-mose201831nas a2200169 4500008004100000022001400041245007000055210006900125260009900194300001100293490000700304520117100311100002801482700002301510700002401533856010401557 2016 eng d a1071-102300aExfoliated 2D black phosphorus nanosheets: field emission studies0 aExfoliated 2D black phosphorus nanosheets field emission studies aSTE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USAbA V S AMER INST PHYSICScJUL a0418030 v343 a

A few layer black phosphorus (BP) nanosheets are obtained by micromechanical cleavage from a bulk BP crystal. In a typical exfoliation procedure, a layer of BP is peeled off from bulk crystal with the help of Scotch tape and transferred onto SiO2/Si and pristine Si substrates. The morphological and structural analyses of the samples were carried out using an optical microscopy, a transmission electron microscopy, and a Raman spectroscopy. Field emission investigations on a few layered BP nanosheets on Si substrate were carried out at the base pressure of 1 x 10(-8) mbar. The turn-on value, corresponding to emission current density of similar to 1 mu A/cm(2), is found to be similar to 5.1V/mu m for BP nanosheets/Si emitter and high field enhancement factor (beta) similar to 1164, attributed to atomically thin/sharp edges of the BP nanosheets. The emission current shows good stability at a preset value of similar to 5 mu A over a period of more than 8 h. The present results demonstrate the potential of the mechanically exfoliated BP nanosheets/Si field emitter for the development of practical electron sources. (C) 2016 American Vacuum Society.

1 aSuryawanshi, Sachin, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/exfoliated-2d-black-phosphorus-nanosheets-field-emission-studies02234nas a2200205 4500008004100000245010700041210006900148260000800217300001400225490000600239520149100245100002801736700002401764700002001788700002401808700002401832700002101856700002301877856012801900 2016 eng d00aFacile approach towards fabrication of GdB6-ZnO heteroarchitecture as high currentdensity cold cathode0 aFacile approach towards fabrication of GdB6ZnO heteroarchitectur cAUG a3723-37290 v13 aThree dimensional (3D) GdB6-ZnO heteroarchitecture comprised of thin coating of GdB6 on self aligned ZnO urchins with pointed apex has been synthesized employing optimized Pulsed Laser Deposition (PLD) technique. The self aligned ZnO urchins on Zn substrate were obtained using hydrothermal route. The as-synthesized GdB6-ZnO heteroarchitecture was characterized using XRD, SEM, TEM XPS, and UPS in order to reveal its structural, morphological, chemical, and electronic properties. Interestingly, the GdB6-ZnO heteroarchitecture exhibits superior field emission (FE) behviour in contrast to the pristine ZnO urchins envisaged by extraction of very high emission current density of similar to 4.6 mA/cm(2) at an applied field of similar to 4.5 V/mm, against similar to 1.5 mA/cm(2) at an applied field of similar to 5.6 V/mm from the pristine ZnO urchins emitter. Furthermore, the GdB6-ZnOemitter exhibits good emission stability at pre-set value of similar to 5 mA over duration of more than 3 hours. The superior FE behaviour of the GdB6-ZnO is attributed to low work-function of GdB6 and presence of nanometric protrusions on the emitter surface, further enhancing the aspect ratio provided by the ZnO urchins. The present results demonstrate a facile approach towards fabrication of high current density cold cathodes due to rare earth hexaborides via designing hetero-architectures comprised of their well adherent ultrathin coating on high aspect ratio metal oxide nanostructures.1 aSuryawanshi, Sachin, R.1 aMistari, Chetan, D.1 aSingh, Anil, K.1 aPhase, Deodatta, M.1 aLate, Dattatray, J.1 aSinha, Sucharita1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/facile-approach-towards-fabrication-gdb6-zno-heteroarchitecture-high-currentdensity-cold02264nas a2200277 4500008004100000022001400041245008700055210006900142260011000211300001400321490000600335520127700341100002401618700002001642700001701662700001801679700002801697700001901725700001801744700001601762700001801778700002301796700002401819700002201843856012101865 2016 eng d a2046-206900aField emission properties of highly ordered low-aspect ratio carbon nanocup arrays0 aField emission properties of highly ordered lowaspect ratio carb aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcJAN a9932-99390 v63 a

Herein, we design and develop a field emission device utilizing highly porous carbon nanocup (CNC) films. These three-dimensional (3D) low-aspect ratio CNC structures were fabricated by a combination of anodization and chemical vapor deposition techniques. The low turn-on fields of 2.30 V mu m(-1) were observed to draw an emission current density of 1 mu A cm(-2) and a maximum emission current density of similar to 1.802 mA cm(-2) drawn at an applied field of similar to 4.20 V mu m(-1). The enhanced field emission behavior observed from the CNC films is attributed to an excellent field enhancement factor of 1645. The observed field emission properties of CNC arrays are attributed to a synergistic combination of high aspect ratio, nano-sized radius of curvature, highly organized distribution of the emitters over the whole area of specimen and lower screening effect of the CNC arrays. These observations shed light on the effect of the stacking carbon layers of CNC on their electronic properties and open up possibilities to integrate new morphologies of graphitic carbon in nanotechnology applications. Thus, the low turn on field, high emission current density and better emission current stability enable CNC based future field emission applications.

1 aGupta, Bipin, Kumar1 aKedawat, Garima1 aKumar, Pawan1 aSingh, Satbir1 aSuryawanshi, Sachin, R.1 aAgrawal, Neetu1 aGupta, Govind1 aKim, Ah, Ra1 aGupta, R., K.1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aHahm, Myung, Gwan uhttps://library.ncl.res.in/content/field-emission-properties-highly-ordered-low-aspect-ratio-carbon-nanocup-arrays-001766nas a2200157 4500008004100000245009700041210006900138260000800207300001800215490000600233520117000239100002801409700002301437700002401460856012401484 2016 eng d00aLaser exfoliation of 2D black phosphorus nanosheets and their application as a field emitter0 aLaser exfoliation of 2D black phosphorus nanosheets and their ap cNOV a112103-1121080 v63 aHighly crystalline two dimensional (2D) few layered black phosphorus (BP) nanosheets have been synthesized via a one step facile laser irradiation technique under optimized experimental conditions. The field emission investigations on the few layered black phosphorus nanosheets were carried out at the base pressure 1 x 10(-8) mbar. The morphological, elemental, optical, and structural analysis of the as-synthesized black phosphorus sample was carried out using SEM, AFM, EDAX, TEM, and Raman spectroscopy. The turn-on values of the BP nanosheets emitter were found to be significantly lower than that of earlier reports of BP nanosheets, graphene, and carbon nanotubes based field emitters due to the high field enhancement factor (beta) similar to 2986 associated with atomically thin/sharp edges of the BP nanosheets emitter. The emission current versus time plot depicts the good emission current stability with a pre-set value of 1 mu A for similar to 5 h duration. Our facile synthesis approach and the robust field emitter nature of the BP nanosheets makes them a potential candidate for a practical electron source in vacuum micro/nanoelectronic devices.1 aSuryawanshi, Sachin, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/laser-exfoliation-2d-black-phosphorus-nanosheets-and-their-application-field-emitter02445nas a2200217 4500008004100000022001400041245009300055210006900148260011000217300001400327490000600341520159700347100002801944700002001972700002401992700001802016700002302034700002402057700002102081856012502102 2016 eng d a2050-752600aLow frequency noise and photo-enhanced field emission from ultrathin PbBi2Se4 nanosheets0 aLow frequency noise and photoenhanced field emission from ultrat aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcDEC a1096-11030 v43 a

Atomically thin two-dimensional layered materials have gained wide interest owing to their novel properties and potential for applications in nanoelectronic and optoelectronic devices. Here, we present the spectral analysis and photo-enhanced field emission studies of a layered intergrowth PbBi2Se4 nanosheet emitter, performed at the base pressure of similar to 1 x 10(-8) mbar. The emitter shows a turn-on field value of similar to 4.80 V mu m(-1), corresponding to an emission current density of similar to 1 mu A cm(-2). Interestingly, when the cathode was illuminated with visible light, it exhibited a lower turn-on field of B3.90 V mm(-1), and a maximum emission current density of similar to 893 mu A cm(-2) has been drawn at an applied electric field of similar to 8.40 V mu m(-1). Furthermore, the photo-enhanced emission current showed reproducible, step-like switching behavior in synchronous with ON-OFF switching of the illumination source. The emission current-time plots reveal excellent stability over a duration of similar to 6 h. Low-frequency noise is a significant limitation for the performance of nanoscale electronic devices. The spectral analysis performed on a Fast Fourier Transform (FFT) analyzer revealed that the observed noise is of 1/f(alpha) type, with the value of alpha similar to 0.99. The low frequency noise, photo-enhanced field emission, and reproducible switching behavior characterized with very fast rise and fall times propose the layered PbBi2Se4 nanosheet emitter as a new promising candidate for novel vacuum nano-optoelectronic devices.

1 aSuryawanshi, Sachin, R.1 aGuin, Satya, N.1 aChatterjee, Arindom1 aKashid, Vikas1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aBiswas, Kanishka uhttps://library.ncl.res.in/content/low-frequency-noise-and-photo-enhanced-field-emission-ultrathin-pbbi2se4-nanosheets-002261nas a2200205 4500008004100000022001400041245007900055210006900134260005700203300000800260490000800268520152400276100002201800700002601822700002801848700002401876700002301900700002501923856010701948 2016 eng d a0947-839600aObservation of enhanced field emission properties of Au/TiO2 nanocomposite0 aObservation of enhanced field emission properties of AuTiO2 nano a233 SPRING ST, NEW YORK, NY 10013 USAbSPRINGERcMAY a5600 v1223 a

Simple and low-cost method of thermal annealing was used to decorate Gold (Au) nanoparticles on aligned TiO2 nanotubes. The aligned TiO2 nanotubes were decorated by Au nanoparticles with an average diameter of 9, 18 and 28 nm (aligned TiO2 nanotubes referred as specimen A and TiO2 nanotubes decorated by Au nanoparticles with average diameter of 9, 18 and 28 nm are referred as specimen B, C and D, respectively). The detailed characterization such as structural, morphological and elemental analysis of TiO2 and Au/TiO2 nanocomposite have been carried out using X-ray diffraction, field emission scanning electron microscope, transmission electron microscope, X-ray photoelectron spectroscopy and Raman spectroscopy. Furthermore, the meticulous comparative field emission characteristics of the aligned TiO2 nanotubes and Au/TiO2 nanocomposite have been performed. The turn-on field defined for the current density of 10 mu A/cm(2) has been found to be 3.9, 2.8, 3.2 and 3.7 V/mu m for specimen A, B, C and D, respectively. The observed low turn-on field of specimen B has been found to be superior than the other semiconducting nanocomposites reported in the literature. The emission current stability over a period of 3 h is found to be better for all the specimens. To the best of our knowledge, a systematic field emission study of Au/TiO2 nanocomposite has not been explored. The observed superior field emission study of Au/TiO2 nanocomposite indicates their possible use in micro/nanoelectronic devices.

1 aPatil, Girish, P.1 aBagal, Vivekanand, S.1 aSuryawanshi, Sachin, R.1 aLate, Dattatray, J.1 aMore, Mahendra, A.1 aChavan, Padmakar, G. uhttps://library.ncl.res.in/content/observation-enhanced-field-emission-properties-autio2-nanocomposite02260nas a2200193 4500008004100000245008900041210006900130260000800199300002400207490000800231520156900239100002801808700002001836700002401856700002401880700002101904700002301925856011801948 2016 eng d00aPulsed laser-deposited nanocrystalline GdB6 thin films on W and Re as field emitters0 aPulsed laserdeposited nanocrystalline GdB6 thin films on W and R cOCT aArticle Number: 8990 v1223 aGadolinium hexaboride (GdB6) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of GdB6 on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of GdB6/W and GdB6/Re emitters were performed in a planar diode configuration at the base pressure similar to 10(-8) mbar. The GdB6/W and GdB6/Re tip emitters deliver high emission current densities of similar to 1.4 and 0.811 mA/cm(2) at an applied field of similar to 6.0 and 7.0 V/mu m, respectively. The Fowler-Nordheim (F-N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (beta) estimated using the slopes of the F-N plots indicate that the PLD GdB6 coating on Wand Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the GdB6/W and GdB6/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the GdB6/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, similar to 1.6 +/- 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the GdB6/W emitter are markedly different from that of GdB6/Re emitter, which can be attributed to the growth of GdB6 films on W and Re substrates.1 aSuryawanshi, Sachin, R.1 aSingh, Anil, K.1 aPhase, Deodatta, M.1 aLate, Dattatray, J.1 aSinha, Sucharita1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/pulsed-laser-deposited-nanocrystalline-gdb6-thin-films-w-and-re-field-emitters02610nas a2200217 4500008004100000022001400041245009600055210006900151260011000220300001600330490000600346520174400352100002602096700002202122700002002144700002802164700002402192700002302216700002502239856012802264 2016 eng d a2046-206900aSurface modification of aligned CdO nanosheets and their enhanced field emission properties0 aSurface modification of aligned CdO nanosheets and their enhance aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcAPR a41261-412670 v63 a

Porous aligned CdO nanosheets were grown on a cadmium (Cd) substrate by the simple and cost effective method of thermal annealing. Further, decoration of gold (Au) nanoparticles on the porous aligned CdO nanosheets (specimen A) was achieved by coating with a Au thin film and subsequent annealing treatment. The average diameters of decorated Au nanoparticles were found to be 15 nm, 21 nm and 28 nm for the Au thin films with 20 s, 40 s and 60 s (specimens B, C, and D) coating times. Detailed characterizations, such as structural and morphological analysis of porous CdO nanosheets and Au/CdO nanocomposite (Au decorated porous CdO nanosheets), have been carried out using a Field Emission Scanning Electron Microscope (FESEM), X-ray diffraction (XRD) and a Transmission Electron Microscope (TEM). Field emission studies of specimens A, B, C and D were carried out in the planar diode configuration. Turn-on fields of 1.9 V mu m(-1), 1.1 V mu m(-1), 2.4 V mu m(-1) and 2.8 V mu m(-1) have been found for the emission current density of 10 RA cm(-2) for specimens A, B, C and D, respectively. The observed low turn -on field of specimen B (Au diameter of 15 nm) was found to be superior to other semiconducting nanostructures reported in the literature. The field emission current stability over a period of 3 h at the preset current density of 1 RA cm(-2) is found to be excellent for all specimens. To the best of our knowledge, field emission studies along with surface modification of porous aligned CdO nanosheets have not been reported in the literature. The simple synthesis route, facile surface modification and the superior field emission results make the present emitter very suitable for micro/nano electronic devices.

1 aBagal, Vivekanand, S.1 aPatil, Girish, P.1 aDeore, Amol, B.1 aSuryawanshi, Sachin, R.1 aLate, Dattatray, J.1 aMore, Mahendra, A.1 aChavan, Padmakar, G. uhttps://library.ncl.res.in/content/surface-modification-aligned-cdo-nanosheets-and-their-enhanced-field-emission-properties01505nas a2200253 4500008004100000022001400041245010000055210006900155260008100224300001100305490000700316520057200323653001100895653001900906653001500925100002400940700002800964700002400992700002801016700002301044700002501067700002901092856013001121 2016 eng d a0022-372700aSynthesis, microstructure, optical and field emission studies of iron vanadium oxide nanosheets0 aSynthesis microstructure optical and field emission studies of i aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcAPR a1453010 v493 a

We report a single step growth of thin graphene-like, densely packed FeV3O8 (FVO) nanosheets on silicon substrates via facile hydrothermal synthesis. These nanosheets have dimensions of a few microns with thin edges, offering very high aspect ratio. These FVO nanosheets exhibit excellent field emission behaviour with low turn on and threshold voltages of 1.3 V mu m(-1) and 1.7 V mu m(-1), respectively. The corresponding emitter delivers high emission current density of (similar to 1.650 mA cm(-2)) at fairly low applied field (similar to 4.00 V mu m(-1)).

10aFeV3O810afield emission10ananosheets1 aBadadhe, Satish, S.1 aSuryawanshi, Sachin, R.1 aNaphade, Rounak, A.1 aChaudhary, Minakshi, V.1 aMore, Mahendra, A.1 aShelke, Manjusha, V.1 aOgale, Satishchandra, B. uhttps://library.ncl.res.in/content/synthesis-microstructure-optical-and-field-emission-studies-iron-vanadium-oxide-nanosheets02204nas a2200253 4500008004100000022001400041245009300055210006900148260000800217300001400225490000600239520137800245653002601623653002401649653001701673653000801690653000801698100002201706700002801728700002401756700002401780700002301804856012301827 2017 eng d a2365-654900aEnhanced field emission characteristics of a 3D hierarchical Hfo2-Zno heteroarchitecture0 aEnhanced field emission characteristics of a 3D hierarchical Hfo cMAR a2305-23100 v23 a

Three dimensional (3D) HfO2-ZnO heteroarchitecture comprised of thin coating of HfO2 on self assembled 3D ZnO urchins with pointed apex has been synthesized using hydrothermal route followed by Pulsed Laser Deposition (PLD). The as-synthesized HfO2-ZnO heteroarchitecture was characterized using XRD, SEM, EDS, and (HR) TEM, in order to reveal its structural, morphological, and chemical properties. The HfO2-ZnO heteroarchitecture emitter exhibits superior field emission (FE) behaviour in contrast to the pristine ZnO urchins, demonstrated by delivery of high emission current density of similar to 885 mA/cm2 at an applied field of similar to 3.35 V/mm, against similar to 383 mA/cm(2) at an applied field of similar to 4.32 V/mu m for the pristine ZnO urchins emitter. Interestingly, the HfO2-ZnO heteroarchitecture emitter exhibits excellent emission current stability characterized with fewer fluctuations, owing to very good ion-bombardment resistance offered by the HfO2 coating. Furthermore, the heteroarchitecture thus obtained facilitates tailoring of the morphology with high aspect ratio and modulation of electronic properties as well, thereby enhancing the FE behaviour. Despite HfO2 being wide band gap and high-k material, the HfO2-ZnO heteroarchitecture exhibits potential as promising candidate for fabrication of high current density cold cathode

10a3D heteroarchitecture10aField Emission (FE)10ahydrothermal10aPLD10aTEM1 aShisode, Raju, T.1 aSuryawanshi, Sachin, R.1 aMistari, Chetan, D.1 aLate, Dattatray, J.1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/enhanced-field-emission-characteristics-3d-hierarchical-hfo2-zno-heteroarchitecture02226nas a2200241 4500008004100000022001400041245014000055210006900195260000800264300001200272490000600284520138100290653001501671653001901686653001501705100002801720700001801748700002101766700002401787700002401811700002301835856012601858 2017 eng d a2365-654900aExtraction of the very high tunneling current and extremely stable emission current from GdB6/W-tip source synthesized using arc plasma0 aExtraction of the very high tunneling current and extremely stab cJAN a562-5660 v23 a

Herein, we report the one step arc plasma synthesis of the GdB6 (Gadolinium hexaboride) nanoparticles and its field emission (FE) characteristics on tungsten point substrate (GdB6/ W). The SEM /TEM analysis revealed the GdB6 nanoparticles on W point substrate exhibit irregular shaped, grainy, dense, course morphology, i.e. uniformly covering the entire tip substrate surface. For GdB6/W point source, the values of the turn-on and threshold fields, defined as field required to draw an emission current density similar to 1 mA/cm(2) and similar to 100 mA/cm(2), respectively are found to be similar to 2.2 and similar to 2.7 V/mm, for anodecathode separation of similar to 1 mm. Interestingly, a very high emission current density of similar to 3.5 A/cm(2) has been drawn from the GdB6/W point emitter at relatively lower applied field of similar to 6.4 V/mm. The field enhancement factor found to be similar to 10,250. The GdB6/W point electron source exhibits a good emission current stability at similar to 10 mA for a period of 6 hr. The emission current stability is enumerated in terms of standard deviation and its magnitude has been measured to be only 1.72% with respect to the average value. The superlative field emission characteristics signify the GdB6/W point electron source as potential candidates for vacuum micro/nanoelectronics device applications.

10aArc Plasma10afield emission10aThin films1 aSuryawanshi, Sachin, R.1 aKanhe, Nilesh1 aMathe, Vikas, L.1 aPhase, Deodatta, M.1 aLate, Dattatray, J.1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/extraction-very-high-tunneling-current-and-extremely-stable-emission-current-gdb6w-tip02321nas a2200313 4500008004100000022001400041245011600055210006900171260000800240300001100248490000600259520127500265100002401540700002001564700002501584700001901609700002801628700002401656700001801680700001701698700002801715700001901743700002301762700002301785700002301808700002201831700002401853856013001877 2018 eng d a2158-322600aHigh-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures0 aHighperformance field emission device utilizing vertically align cJAN a0151170 v83 a

The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 degrees C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm(-1) and D-band at 1340 cm(-1). The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm(2) at 1.2V/mu m), low turn-on field (0.6 V/mu m) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources. (c) 2018 Author(s).

1 aGupta, Bipin, Kumar1 aKedawat, Garima1 aGangwar, Amit, Kumar1 aNagpal, Kanika1 aKashyap, Pradeep, Kumar1 aSrivastava, Shubhda1 aSingh, Satbir1 aKumar, Pawan1 aSuryawanshi, Sachin, R.1 aSeo, Deok, Min1 aTripathi, Prashant1 aMore, Mahendra, A.1 aSrivastava, O., N.1 aHahm, Myung, Gwan1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/high-performance-field-emission-device-utilizing-vertically-aligned-carbon-nanotubes-based