01774nas a2200289   4500008004100000022001400041245009000055210006900145260007300214300001000287490000800297520077000305653002301075653002501098653002301123653003101146653002901177653002201206100002001228700001801248700001801266700002101284700001801305700002301323700002201346856011601368       2008                        eng d  a0022-024800aCharacterization of MoSe2 thin film deposited at room temperature from solution phase0 aCharacterization of MoSe2 thin film deposited at room temperatur  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcDEC  a15-190 v3113 a<p>A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of conlplexed ammonium molybdate, hydrazine hydrate and sodium Selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe2 thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap `E-g' for the film was found to be 1.43eV and electrical conductivity in the order of 10(-2)(Omega cm)(-1) with n-type conduction mechanism. (C) 2008 Elsevier B.V. All rights reserved.</p>10aCrystal morphology10aGrowth from solution10aInorganic compound10aPolycrystalline deposition10aSemiconducting materials10aX-ray diffraction1 aHankare, P., P.1 aPatil, A., A.1 aChate, P., A.1 aGaradkar, K., M.1 aSathe, D., J.1 aManikshete, A., H.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/characterization-mose2-thin-film-deposited-room-temperature-solution-phase-001894nas a2200265   4500008004100000022001400041245008300055210006900138260006900207300001000276490000800286520099100294653002901285653002401314653001901338653001701357653002201374100002001396700001901416700001801435700002101453700001801474700002201492856011401514       2012                        eng d  a0925-838800aChemical deposition of CuInSe2 thin films by photoelectrochemical applications0 aChemical deposition of CuInSe2 thin films by photoelectrochemica  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcJAN  a50-530 v5113 a<p>Copper indium diselenide films have been synthesized by chemical bath deposition method. The configuration of fabricated cell is n-CuInSe2|NaOH (1 M) + S (1 M) + Na2S (1 M)|C-(graphite). The photoelectrochemical cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that CuInSe2 thin films are n-type conductivity. The junction ideality factor is found to be 3.81. The flat band potential is found to be 0.763 V. The barrier height value is found to be 0.232 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency are found to be 310 mV, 20 mu A, 42.12% and 0.82%, respectively. Photoresponse shows lighted ideality factor which is 2.92. Spectral response shows the maximum current observed at 650 nm. (C) 2011 Published by Elsevier B.V.</p>10aChemical bath deposition10aFlat band potential10aPhoto response10aPower output10aSpectral response1 aHankare, P., P.1 aRathod, K., C.1 aChate, P., A.1 aGaradkar, K., M.1 aSathe, D., J.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/chemical-deposition-cuinse2-thin-films-photoelectrochemical-applications-0