02173nas a2200229   4500008004100000022001400041245010300055210006900158260010600227300001200333490000700345520131000352653002301662653001801685100001801703700001801721700002001739700002101759700002201780700002001802856012101822       2008                        eng d  a0022-369700aSynthesis, characterization of chemically deposited indium selenide thin films at room temperature0 aSynthesis characterization of chemically deposited indium seleni  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcJAN  a249-2540 v693 a<p>Polycrystalline In2Se3 semiconducting thin films were prepared by using relatively simple chemical bath deposition method at room temperature by the reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium. Various preparative conditions of thin film deposition are outlined. The as grown films were found to be transparent, uniform, well adherent and red in color. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, atomic absorption spectroscopy and energy dispersive atomic X-ray diffraction (EDAX). The XRD analysis of the film showed the presence of polycrystalline nature with hexagonal crystal structure. SEM study revels that the grains are homogenous, without cracks or pinholes and well covers the glass substrate. The optical absorption and electrical conductivity was measured. The direct optical band gap value for the films was found to be of the order of 2.35eV at room temperature and have specific electrical conductivity of the order of 10(-2) (Omega cm)(-1) showing n-type conduction mechanism. The utility of the adapted technique is discussed from the view-point of applications considering the optoelectric and structural data. (c) 2007 Elsevier Ltd. All rights reserved.</p>10aChemical synthesis10aSemiconductor1 aAsabe, M., R.1 aChate, P., A.1 aDelekar, S., D.1 aGaradkar, K., M.1 aMulla, Imtiaz, S.1 aHankare, P., P.  uhttps://library.ncl.res.in/content/synthesis-characterization-chemically-deposited-indium-selenide-thin-films-room-001683nas a2200241   4500008004100000022001400041245009300055210006900148260006900217300001400286490000800300520082500308653002301133653001901156653002801175653001401203100002001217700001901237700001801256700001801274700002201292856012701314       2011                        eng d  a0925-838800aSynthesis and characterization of chemically deposited nickel substituted CdSe thin film0 aSynthesis and characterization of chemically deposited nickel su  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcFEB  a2948-29510 v5093 a<p>The technologically important Cd(0.5)Ni(0.5)Se thin film has been developed by solution growth technique on non-conducting glass substrate in tartarate bath containing Cd(+2), Ni(+2) ions and sodium selenosulphate in an aqueous alkaline medium at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical absorption and electrical measurements. The X-ray diffraction study indicates that the film is polycrystalline in nature with hexagonal phase. Scanning electron micrograph shows that the film is homogeneous with well-defined grains. The films have high optical absorption coefficient. Thermoelectric power measurement shows p-type conduction mechanism. (C) 2010 Elsevier B.V. All rights reserved.</p>10aChemical synthesis10aCrystal growth10aElectrical conductivity10athin film1 aHankare, P., P.1 aJadhav, B., V.1 aChate, P., A.1 aSathe, D., J.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/synthesis-and-characterization-chemically-deposited-nickel-substituted-cdse-thin-film-0