01646nas a2200241   4500008004100000022001400041245009700055210006900152260006900221300001000290490000800300520079800308653001201106653002301118653001501141653002201156100002001178700001901198700001801217700001901235700002201254856012801276       2010                        eng d  a0925-838800aPreparation and characterization of CuInSe2 thin films by chemical bath deposition technique0 aPreparation and characterization of CuInSe2 thin films by chemic  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcJUN  a78-810 v5003 a<p>Copper indium diselenide (CIS) thin films have been deposited using a precursor solution containing copper sulphate, indium trichoride, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at room temperature. The as grown brown colored films were found to be well adherent to glass substrates. The films were characterized by X-ray diffraction, scanning electron microscopy, atomic absorption spectroscopy, optical absorption, electrical resistivity, and thermo electric measurement techniques. The analysis of optical absorption data shows band-gap energy (E-g) to be 1.1 eV. The electrical resistivity of the thin film was found to be of the order of 10(2) (Omega cm). Thermoelectric power measurement shows n-type conduction. (C) 2010 Published by Elsevier B.V.</p>10aCuInSe210aOptical properties10aThin films10aX-ray diffraction1 aHankare, P., P.1 aRathod, K., C.1 aChate, P., A.1 aJadhav, A., V.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/preparation-and-characterization-cuinse2-thin-films-chemical-bath-deposition-technique-001778nas a2200229   4500008004100000022001400041245008200055210006900137260007400206300001200280490000700292520097400299100002001273700001901293700001801312700001901330700001901349700002401368700002101392700002201413856011301435       2011                        eng d  a0957-452200aPhotoelectrochemical applications of In2Se3 thin films by chemical deposition0 aPhotoelectrochemical applications of In2Se3 thin films by chemic  aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcAPR  a359-3640 v223 a<p>Indium selenide films have been synthesized by chemical bath deposition method onto stainless steel plate. The configuration of fabricated cell is n-In2Se3| NaOH(1 M) + S(1 M) + Na2S(1 M) |C-(graphite). Characterization of the photoelectrochemical cell was carried out by studying X-ray diffraction, current-voltage and capacitance-voltage characteristics in the dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that the In2Se3 thin films are n-type semiconductor. The junction ideality factor was found to be 3.24. The flat band potential and the barrier height were found to be 0.720 V and 0.196 eV, respectively. From the study of power output characteristics, open circuit voltage, short circuit current, fill factor and efficiency were found to be 310 mV, 20 mu A, 37.64 and 0.61%, respectively. Photoresponse studies show that the lighted ideality factor is 2.78. Maximum current was observed at 575 nm.</p>1 aHankare, P., P.1 aRathod, K., C.1 aAsabe, M., R.1 aJadhav, A., V.1 aHelavi, V., B.1 aChavan, Santosh, S.1 aGaradkar, K., M.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/photoelectrochemical-applications-in2se3-thin-films-chemical-deposition-001894nas a2200265   4500008004100000022001400041245008300055210006900138260006900207300001000276490000800286520099100294653002901285653002401314653001901338653001701357653002201374100002001396700001901416700001801435700002101453700001801474700002201492856011401514       2012                        eng d  a0925-838800aChemical deposition of CuInSe2 thin films by photoelectrochemical applications0 aChemical deposition of CuInSe2 thin films by photoelectrochemica  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcJAN  a50-530 v5113 a<p>Copper indium diselenide films have been synthesized by chemical bath deposition method. The configuration of fabricated cell is n-CuInSe2|NaOH (1 M) + S (1 M) + Na2S (1 M)|C-(graphite). The photoelectrochemical cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that CuInSe2 thin films are n-type conductivity. The junction ideality factor is found to be 3.81. The flat band potential is found to be 0.763 V. The barrier height value is found to be 0.232 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency are found to be 310 mV, 20 mu A, 42.12% and 0.82%, respectively. Photoresponse shows lighted ideality factor which is 2.92. Spectral response shows the maximum current observed at 650 nm. (C) 2011 Published by Elsevier B.V.</p>10aChemical bath deposition10aFlat band potential10aPhoto response10aPower output10aSpectral response1 aHankare, P., P.1 aRathod, K., C.1 aChate, P., A.1 aGaradkar, K., M.1 aSathe, D., J.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/chemical-deposition-cuinse2-thin-films-photoelectrochemical-applications-0