01774nas a2200289   4500008004100000022001400041245009000055210006900145260007300214300001000287490000800297520077000305653002301075653002501098653002301123653003101146653002901177653002201206100002001228700001801248700001801266700002101284700001801305700002301323700002201346856011601368       2008                        eng d  a0022-024800aCharacterization of MoSe2 thin film deposited at room temperature from solution phase0 aCharacterization of MoSe2 thin film deposited at room temperatur  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcDEC  a15-190 v3113 a<p>A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of conlplexed ammonium molybdate, hydrazine hydrate and sodium Selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe2 thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap `E-g' for the film was found to be 1.43eV and electrical conductivity in the order of 10(-2)(Omega cm)(-1) with n-type conduction mechanism. (C) 2008 Elsevier B.V. All rights reserved.</p>10aCrystal morphology10aGrowth from solution10aInorganic compound10aPolycrystalline deposition10aSemiconducting materials10aX-ray diffraction1 aHankare, P., P.1 aPatil, A., A.1 aChate, P., A.1 aGaradkar, K., M.1 aSathe, D., J.1 aManikshete, A., H.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/characterization-mose2-thin-film-deposited-room-temperature-solution-phase-001351nas a2200181   4500008004100000022001400041245009800055210006900153260007400222300001200296490000700308520064500315100001800960700002000978700002000998700002101018856013001039       2012                        eng d  a0957-452200aStructural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film0 aStructural and surface morphological properties of chemically de  aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcAPR  a909-9120 v233 a<p>Preparation of layered type semiconductor Mo0.5W0.5S2- thin films has been successfully done by using chemical bath deposition method. Objective of the studies are related to structural, optical, morphological and electrical properties of the thin films. The preparation method is based on the reaction between tartarate complex of Mo and W with thiourea in an aqueous alkaline medium at 363 K. X-Ray diffraction reveals a polycrystalline film composed of both MoS2 and WS2 phases. The optical study shows that the band gap of the film is 1.6 eV. Electrical conductivity is high which is in the order of 10(-3)-10(-2) (Omega cm)(-1).</p>1 aPatil, A., A.1 aHankare, P., P.1 aGaikwad, A., B.1 aGaradkar, K., M.  uhttps://library.ncl.res.in/content/structural-and-surface-morphological-properties-chemically-deposited-mo05w05s2-thin-film-0