02140nas a2200253   4500008004100000022001400041245008800055210006900143260006900212300001200281490000800293520130500301653002001606653001701626653000801643653001101651653000801662100001901670700001301689700002201702700001901724700002101743856012201764       2007                        eng d  a0925-400500aLow temperature synthesis and NOx sensing properties of nanostructured Al-doped ZnO0 aLow temperature synthesis and NOx sensing properties of nanostru  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcOCT  a382-3860 v1263 a<p>Although ZnO is studied intensively as a sensing material, there are limited reports available on aluminum-doped ZnO (AZO) as a NO, sensor. This paper reports selective NO, sensing characteristics of M-doped ZnO synthesized in the form of porous pellets sintered at 350 degrees C. The salient feature of our experimental results is that our sensor can detect small concentrations of NO, at lower operating temperature. It is also observed that as compared to gases such as SOx HCl, LPG, H2S, H-2, ammonia, alcohol and acetone it selectively detects NOx due to Al-doping. The amount of Al in ZnO during synthesis is varied between 1 and 10 wt%. Our sensor senses NO, concentration as low as 20ppm at 100 degrees C with a %response of 11 and a %response of 740 at 300 degrees C for 1 wt% Al. Of all the compositions with Al-doping, I wt% is found to give best results. Sensing experiments carried out at 350 C, however. do not show any significant improvement in the gas sensing properties. The phase contents and lattice parameters were determined by XRD and the average particle size was obtained using Scherrer formula. A probable mechanism for sensing NO, involving oxygen ion adsorption and desorption on the surface of sensor has been suggested. (C) 2007 Elsevier B.V. All rights reserved.</p>10aaluminum doping10ananomaterial10aNOx10aSensor10aZnO1 aNavale, S., C.1 aRavi, V.1 aMulla, Imtiaz, S.1 aGosavi, S., W.1 aKulkarni, S., K.  uhttps://library.ncl.res.in/content/low-temperature-synthesis-and-nox-sensing-properties-nanostructured-al-doped-zno-002154nas a2200265   4500008004100000022001400041245005700055210005600112260006900168300001200237490000800249520136900257653002001626653000801646653000801654653001501662653000801677100002401685700001301709700001701722700002201739700001901761700002101780856008701801       2008                        eng d  a0925-400500aEPR and DRS evidence for NO2 sensing in Al-doped ZnO0 aEPR and DRS evidence for NO2 sensing in Aldoped ZnO  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcMAR  a668-6730 v1303 a<p>Zinc oxide (ZnO) is a well-known semiconducting multifunctional material wherein properties right from the morphology to gas sensitivity can be tailor-made by doping or surface modification. Aluminum (Al)-incorporated porous zinc oxide (AI:ZnO) exhibits good response towards NO2 at low-operating temperature. The NO2 gas concentration as low as 20 ppm exhibits S = 17% for 5 wt. % Al-incorporated ZnO. The NO2 response increases with operating temperature and concentration and reaches to its maximum at 300 degrees C without any interference from other gases such as SO3, HCl, LPG and alcohol. Physico-chemical characterization likes differential thermogravimetric analysis (TG-DTA) electron paramagnetic resonance (EPR) and diffused reflectance spectroscopy (DRS) have been used to understand the sensing behavior for pure and A]-incorporated ZnO. The TG-DTA depicts formation of ZnO phase at 287 degrees C. The EPR study reveals distinct variation for O- (g=2.003) and Zn interstitial (g = 1.98) defect sites in pure and Al:ZnO. The DRS studies elucidate signature of adsorbed NO, species in aluminium-incorporated zinc oxide indicating its tendency to adsorb these species even at low temperatures. This paper is an attempt to correlate the gas sensing behavior with the physico-chemical studies such as EPR and DRS. (c) 2007 Published by Elsevier B.V.</p>10aaluminum doping10aDRS10aEPR10aNO2 sensor10aZnO1 aNavale, Shalaka, C.1 aRavi, V.1 aSrinivas, D.1 aMulla, Imtiaz, S.1 aGosavi, S., W.1 aKulkarni, S., K.  uhttps://library.ncl.res.in/content/epr-and-drs-evidence-no2-sensing-al-doped-zno-0