01897nas a2200217   4500008004100000022001400041245012200055210006900177260011000246300001400356490000600370520100900376100002901385700002301414700002601437700002101463700002001484700002301504700002501527856012701552       2013                        eng d  a2050-752600aHigh efficiency electron field emission from protruded graphene oxide nanosheets supported on sharp silicon nanowires0 aHigh efficiency electron field emission from protruded graphene   aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcJUN  a5040-50460 v13 a<p>Graphene oxide (GO) potentially has applications in vacuum microelectronic devices for realization of field emission displays. Graphene and its derivatives are expected to be efficient field emitters due to their unique electrical properties. However, the flat sheet structure of graphene or GO allows electron field emission only from the edges of graphene and GO nanosheets. In order to extract maximum field emission current density at lower applied voltage from the GO nanosheets, we supported and stretched them on sharp tips of silicon nanowires (SiNWs). Highly efficient and stable field emission with low turn-on field was observed for these SiNW-GO heterostructures. The sharp protrusions created by stretching of the GO nanosheets on SiNWs locally enhance the electric field and thus enhance the field emission characteristics. The dominant use of silicon in electronic devices makes this approach robust for the development of field emission devices using graphene based field emitters.</p>1 aDevarapalli, Rami, Reddy1 aKashid, Ranjit, V.1 aDeshmukh, Ashvini, B.1 aSharma, Ponchami1 aDas, Manash, R.1 aMore, Mahendra, A.1 aShelke, Manjusha, V.  uhttps://library.ncl.res.in/content/high-efficiency-electron-field-emission-protruded-graphene-oxide-nanosheets-supported-0