01385nas a2200229   4500008004100000022001400041245003700055210003600092260009900128300001200227490000700239520071800246653001300964653001100977653002100988653000901009653001301018100001901031700002101050700001301071856007101084       2007                        eng d  a0272-884200aVaristors based on Ta-doped TiO20 aVaristors based on Tadoped TiO2  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLANDbELSEVIER SCI LTDcMAR  a301-3030 v333 a<p>The nonlinear current (I)-voltage (V) characteristics of titanium dioxide are examined when doped with small quantities (0.05-0.5 at.%) of tantalum pentaoxide. For optimum compositions, the nonlinear coefficients are found to be in the range of 25-30 and the breakdown field strength (EB) is similar to 4000 V/cm. The obtained alpha- and E-B-values are higher than the previously reported values for TiO2 ceramics. The acceptor like surface states at the grain boundary adsorb oxygen during sintering and cooling, leading to formation of grain boundary barrier. The grain boundary barrier height (OB) is calculated using Schottky equation. (c) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.</p>10aCeramics10aOxides10aSchottky barrier10aTiO210avaristor1 aNavale, S., C.1 aMurugan, Vadivel1 aRavi, V.  uhttps://library.ncl.res.in/content/varistors-based-ta-doped-tio2-0