02049nas a2200325   4500008004100000022001400041245014200055210006900197260012500266300002300391490000700414520071600421653003101137653003301168653002401201653003001225653002901255653002801284653004801312653003501360653003701395653002401432100002001456700002501476700002001501700001901521700002401540700002901564856013001593       2010                        eng d  a0003-695100aNanoscale modulation of electronic states across unit cell steps on the surface of an epitaxial colossal magnetoresistance manganite film0 aNanoscale modulation of electronic states across unit cell steps  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScJUN  aArticle No. 2631080 v963 a<p>The nature of electronic states near the edge of unit cell steps on the surface of epitaxial La(0.7)Sr(0.3)MnO(3) (LSMO) thin films grown by real-time reflection high energy electron diffraction monitored pulsed laser deposition is examined by scanning tunneling microscopy and scanning tunneling spectroscopy techniques. It is observed that the electronic states are strongly modulated near the step edge with considerably high gap at the edge and low gap on the terrace. This modulation weakens at low temperature. The temperature evolution of the density of states and the nature of gap in deep metallic state of LSMO are also discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3455886]</p>10acolossal magnetoresistance10aelectronic density of states10alanthanum compounds10amagnetic epitaxial layers10aNanostructured materials10apulsed laser deposition10areflection high energy electron diffraction10ascanning tunnelling microscopy10ascanning tunnelling spectroscopy10astrontium compounds1 aRana, Abhimanyu1 aBogle, Kashinath, A.1 aGame, Onkar, S.1 aPatil, Shankar1 aValanoor, Nagarajan1 aOgale, Satishchandra, B.  uhttps://library.ncl.res.in/content/nanoscale-modulation-electronic-states-across-unit-cell-steps-surface-epitaxial-colossal-001630nas a2200241   4500008004100000022001400041245010900055210006900164260010600233300001400339490000800353520069400361653002401055653002801079653000901107653003401116100002001150700002001170700002001190700002401210700002901234856012501263       2011                        eng d  a0038-109800aStrong electric field modulation of transport in PVDF/MWCNT nanocomposite near the percolation threshold0 aStrong electric field modulation of transport in PVDFMWCNT nanoc  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcNOV  a1612-16150 v1513 a<p>A nanocomposite comprising of multiwalled carbon nanotubes (MWCNT) embedded in ferroelectric Poly(vinylidene fluoride) PVDF polymer matrix is examined for electric field induced transport modulation. The pulsed laser deposition (PLD) grown thin films of the nanocomposite with different MWCNT content were characterized. When used as a channel layer in a field effect transistor configuration, a strong electric field modulation of the transport was realized just below the percolation threshold. We believe that this nanocomposite non-percolating channel concept can provide several opportunities for FET devices for organic electronics. (C) 2011 Elsevier Ltd. All rights reserved.</p>10aField effect device10apulsed laser deposition10aPVDF10aScanning tunneling microscopy1 aChanmal, Chetan1 aDeo, Meenal, S.1 aRana, Abhimanyu1 aJog, Jyoti, Prakash1 aOgale, Satishchandra, B.  uhttps://library.ncl.res.in/content/strong-electric-field-modulation-transport-pvdfmwcnt-nanocomposite-near-percolation-002217nas a2200277   4500008004100000022001400041245009700055210006900152260007100221300001600292490000600308520122000314653001901534653000901553653003201562653002801594653001401622100002401636700002301660700002301683700002301706700002801729700002301757700002901780856013001809       2014                        eng d  a1944-824400aPulsed laser-deposited MoS2 thin films on W and Si: field emission and photoresponse studies0 aPulsed laserdeposited MoS2 thin films on W and Si field emission  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcSEP  a15881-158880 v63 a<p>We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 mu A/cm(2) is found to be 2.8 V/mu m. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of similar to 30 mA/cm(2) at a relatively lower applied voltage of similar to 3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLDMoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.</p>10afield emission10aMoS210aphotodiode heterostructures10apulsed laser deposition10athin film1 aLate, Dattatray, J.1 aShaikh, Parvez, A.1 aKhare, Ruchita, T.1 aKashid, Ranjit, V.1 aChaudhary, Minakshi, V.1 aMore, Mahendra, A.1 aOgale, Satishchandra, B.  uhttps://library.ncl.res.in/content/pulsed-laser-deposited-mos2-thin-films-w-and-si-field-emission-and-photoresponse-studies-0