01681nas a2200277   4500008004100000022001400041245007500055210006900130260012500199300001100324490000700335520070000342653001101042653001101053653002301064653002601087653002301113653002401136653001201160100002501172700002401197700002001221700002401241700002901265856010901294       2009                        eng d  a0003-695100aEnhanced nonvolatile resistive switching in dilutely cobalt doped TiO20 aEnhanced nonvolatile resistive switching in dilutely cobalt dope  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScNOV  a2035020 v953 a<p>Incorporation of dilute concentration of dopant having a valence state different than that of the host cation enables controlled incorporation proximity vacancy defects for local charge balance. Since nonvolatile resistive switching is a phenomenon tied to such defects, it can be expected to be influenced by dilute doping. In this work, we demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature. We provide essential characterizations and analyses. We suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.</p>10acobalt10aDoping10amagnetic switching10arandom-access storage10atitanium compounds10avacancies (crystal)10avalency1 aBogle, Kashinath, A.1 aBachhav, Mukesh, N.1 aDeo, Meenal, S.1 aValanoor, Nagarajan1 aOgale, Satishchandra, B.  uhttps://library.ncl.res.in/content/enhanced-nonvolatile-resistive-switching-dilutely-cobalt-doped-tio2-0