02092nas a2200217   4500008004100000022001400041245008600055210006900141260006900210300001200279490000800291520131500299653002801614653001701642653002001659653001401679653001501693100002401708700002201732856012001754       2009                        eng d  a0925-400500aH(2)S gas sensitive indium-doped ZnO thin films: preparation and characterization0 aH2S gas sensitive indiumdoped ZnO thin films preparation and cha  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcDEC  a164-1700 v1433 a<p>High quality indium-doped ZnO (IZO) thin films (similar to 100 nm) have been deposited onto the glass substrates by using a conventional spray pyrolysis technique. Precursors such as zinc acetate, indium chloride with Brij-35 (polyoxyethylene lauryl ether) as a non-ionic surfactant were used. The morphology, crystal structure, elemental analysis and the gas response properties were investigated by using SEM, TEM, XRD, AFM and XPS techniques. The films show hexagonal wurtzite structure which reveal variations in (100). (00 2) and (10 1) intensities with indium doping. The crystallite size calculated by Scherrer formula was in the range of 30-50 nm. The SEM and AFM analysis show 50-70 nm sized grains, while the TEM confirms formation of grains by similar to 10nm sized particles. Their response towards various gases was measured at different operating temperatures and different levels of In-dopants. The 3 at% In-doped ZnO showed response as high as 13,000 for 1000ppm H(2)S at 250 degrees C. It exhibited fast response (similar to 2s) and recovery time (similar to 4 min). The gas response strongly depends on the morphology and indium concentration. The high gas response of IZO is explained on the basis of thickness dependent trap state density. (C) 2009 Elsevier B.V. All rights reserved.</p>10aHydrogen sulfide sensor10aIndium oxide10aSpray pyrolysis10athin film10aZinc oxide1 aBadadhe, Satish, S.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/h2s-gas-sensitive-indium-doped-zno-thin-films-preparation-and-characterization-001550nas a2200217   4500008004100000022001400041245012600055210006900181260006900250300001200319490000800331520074200339653001401081653001701095653002001112653001401132653001501146100002401161700002201185856012501207       2011                        eng d  a0925-400500aEffect of aluminium doping on structural and gas sensing properties of zinc oxide thin films deposited by spray pyrolysis0 aEffect of aluminium doping on structural and gas sensing propert  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcAUG  a943-9480 v1563 a<p>A facile spray pyrolysis route is used to deposit aluminium doped ZnO (AZO) thin films on to the glass substrates. It is observed that on aluminium doping the particle size of ZnO reduces significantly; moreover, uniformity of particle also gets enhanced. Their XRD study reveals that intensity ratio of crystal planes depend on the aluminium doping concentration. The gas response studies of; similar to 800 nm thick Al-doped ZnO films at different operating temperatures show that 5 at% Al-doped ZnO thin film exhibits highest response towards H(2)S gas at 200 degrees C. The results suggest that the gas response strongly depends on the particle size and aluminium doping in the ZnO. (C) 2011 Elsevier B.V. All rights reserved.</p>10aAluminium10aH(2)S sensor10aSpray pyrolysis10athin film10aZinc oxide1 aBadadhe, Satish, S.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/effect-aluminium-doping-structural-and-gas-sensing-properties-zinc-oxide-thin-films-0