02092nas a2200217   4500008004100000022001400041245008600055210006900141260006900210300001200279490000800291520131500299653002801614653001701642653002001659653001401679653001501693100002401708700002201732856012001754       2009                        eng d  a0925-400500aH(2)S gas sensitive indium-doped ZnO thin films: preparation and characterization0 aH2S gas sensitive indiumdoped ZnO thin films preparation and cha  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcDEC  a164-1700 v1433 a<p>High quality indium-doped ZnO (IZO) thin films (similar to 100 nm) have been deposited onto the glass substrates by using a conventional spray pyrolysis technique. Precursors such as zinc acetate, indium chloride with Brij-35 (polyoxyethylene lauryl ether) as a non-ionic surfactant were used. The morphology, crystal structure, elemental analysis and the gas response properties were investigated by using SEM, TEM, XRD, AFM and XPS techniques. The films show hexagonal wurtzite structure which reveal variations in (100). (00 2) and (10 1) intensities with indium doping. The crystallite size calculated by Scherrer formula was in the range of 30-50 nm. The SEM and AFM analysis show 50-70 nm sized grains, while the TEM confirms formation of grains by similar to 10nm sized particles. Their response towards various gases was measured at different operating temperatures and different levels of In-dopants. The 3 at% In-doped ZnO showed response as high as 13,000 for 1000ppm H(2)S at 250 degrees C. It exhibited fast response (similar to 2s) and recovery time (similar to 4 min). The gas response strongly depends on the morphology and indium concentration. The high gas response of IZO is explained on the basis of thickness dependent trap state density. (C) 2009 Elsevier B.V. All rights reserved.</p>10aHydrogen sulfide sensor10aIndium oxide10aSpray pyrolysis10athin film10aZinc oxide1 aBadadhe, Satish, S.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/h2s-gas-sensitive-indium-doped-zno-thin-films-preparation-and-characterization-001544nas a2200181   4500008004100000022001400041245007800055210006900133260007400202300001600276490000700292520085700299100002201156700002301178700002201201700002401223856011501247       2015                        eng d  a0957-452200aHigh performance single crystalline PbWO4 nanorod field effect transistor0 aHigh performance single crystalline PbWO4 nanorod field effect t  aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcDEC  a10044-100480 v263 a<p>The highly crystalline PbWO4 nanorods were synthesized using simple co-precipitation method which has application in field effect transistor. The synthesized PbWO4 nanorods were characterized by XRD, Raman spectroscopy, TEM and HRTEM indicating highly crystalline nature. Field effect transistor was fabricated on pre-patterned 300 nm SiO2/Si substrates using photolithography technique with channel length 1 A mu m and width 20 A mu m. Thin film (similar to 100 nm) was made up of PbWO4 nanorods by spin coating on the pre-patterned device used as channel layer. The field effect mobility was observed to be 4.7 cm(2) V-1 s(-1) and I-ON/OFF ratio similar to 10(3) which is far better than the organic molecules due to single crystalline nature and rod like morphology of the PbWO4 providing direct path for charges to transport towards channel.</p>1 aWalke, Pravin, S.1 aPatil, Vandana, B.1 aMulla, Imtiaz, S.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/high-performance-single-crystalline-pbwo4-nanorod-field-effect-transistor-0