02033nas a2200205   4500008004100000022001400041245009300055210006900148260007400217300001400291490000700305520127500312100002001587700001801607700001801625700002001643700002201663700002101685856012101706       2006                        eng d  a0957-452200aCharacterization of Cd1-xZnxSe thin films deposited at low temperature by chemical route0 aCharacterization of Cd1xZnxSe thin films deposited at low temper  aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcDEC  a1055-10630 v173 a<p>Optoelectronic technologically important pseudo-binary Cd1-xZnxSe thin films with a variable composition ( 0 &lt; x &lt; 1) has been developed by chemical bath deposition method. The objective to study growth kinetics, physical, microscopic, compositional, optical, electrical and structural changes. Cd1-xZnxSe have been deposited on non-conducting glass substrate in tartarate bath containing Cd+2 and Zn+2 ions with sodium selenosulphate with an aqueous alkaline medium at 278 K. The quality and the thickness of the films are depends upon deposition temperature, deposition time and pH, etc. X-ray diffraction (XRD), atomic absorption spectroscopy, optical absorption, scanning electron microscopy and thermoelectric technique characterized the films. The XRD study indicates the polycrystalline nature in single cubic phase over whole range of composition. Analysis of absorption spectra gave direct type band gap, the magnitude of which increases non-linearly as zinc content in the film is increased and dc electrical conductivity at room temperature was found to decreases from 10(-7) to 10(-8) (Omega cm)(-1). All the films show n-type conductivity. The promising features observed are the formation of continuous solid solutions in a single cubic phase.</p>1 aHankare, P., P.1 aChate, P., A.1 aAsabe, M., R.1 aDelekar, S., D.1 aMulla, Imtiaz, S.1 aGaradkar, K., M.  uhttps://library.ncl.res.in/content/characterization-cd1-xznxse-thin-films-deposited-low-temperature-chemical-route-001466nas a2200253   4500008004100000022001400041245006100055210006100116260007300177300001400250490000700264520066400271653002300935653002500958653001100983653001800994100002201012700001801034700002001052700001501072700001901087700001301106856009301119       2007                        eng d  a0167-577X00aCoprecipitation technique to prepare CoTa2O6 and CoNb2O60 aCoprecipitation technique to prepare CoTa2O6 and CoNb2O6  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY  a2127-21290 v613 a<p>An aqueous solution of sodium hydroxide was used to coprecipitate cobalt and tantalum (or niobium) ions from their precursors as hydroxides under basic conditions. This precipitate yielded CoTa2O6 (CT) or CoNb2O6 (CN) ceramics on calcining at 700 degrees C, i.e. at a temperature much lower than 900 degrees C, reported for the formation of these powders prepared by the traditional solid state method. The X-ray diffraction (XRD) studies were employed to investigate phase contents and lattice parameters. The morphology of the synthesized powders was investigated by transmission electron microscopy (TEM). (c) 2006 Elsevier B.V. All rights reserved.</p>10aChemical synthesis10aelectronic materials10aOxides10aX-ray methods1 aMulla, Imtiaz, S.1 aNatarajan, N.1 aGaikwad, A., B.1 aSamuel, V.1 aGuptha, U., N.1 aRavi, V.  uhttps://library.ncl.res.in/content/coprecipitation-technique-prepare-cota2o6-and-conb2o601774nas a2200289   4500008004100000022001400041245009000055210006900145260007300214300001000287490000800297520077000305653002301075653002501098653002301123653003101146653002901177653002201206100002001228700001801248700001801266700002101284700001801305700002301323700002201346856011601368       2008                        eng d  a0022-024800aCharacterization of MoSe2 thin film deposited at room temperature from solution phase0 aCharacterization of MoSe2 thin film deposited at room temperatur  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcDEC  a15-190 v3113 a<p>A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of conlplexed ammonium molybdate, hydrazine hydrate and sodium Selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe2 thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap `E-g' for the film was found to be 1.43eV and electrical conductivity in the order of 10(-2)(Omega cm)(-1) with n-type conduction mechanism. (C) 2008 Elsevier B.V. All rights reserved.</p>10aCrystal morphology10aGrowth from solution10aInorganic compound10aPolycrystalline deposition10aSemiconducting materials10aX-ray diffraction1 aHankare, P., P.1 aPatil, A., A.1 aChate, P., A.1 aGaradkar, K., M.1 aSathe, D., J.1 aManikshete, A., H.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/characterization-mose2-thin-film-deposited-room-temperature-solution-phase-002200nas a2200229   4500008004100000022001400041245009100055210006900146260007300215300001400288490000700302520140100309653001401710653001501724653001901739653002201758653000801780100002401788700001901812700002201831856011701853       2008                        eng d  a0039-914000aControlled synthesis of ZnO from nanospheres to micro-rods and its gas sensing studies0 aControlled synthesis of ZnO from nanospheres to microrods and it  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcJUN  a1315-13190 v753 a<p>1D ZnO rods are synthesized using less explored hydrazine method. Here we find, besides being combustible hydrazine can also be used as a structure-directing agent. The ratio of zinc nitrate (ZN) to hydrazine is found to control the morphology of ZnO. At lower concentration of ZN as compared with hydrazine the morphology of ZnO is found to be spherical. As we increase the hydrazine content the morphology changes from spherical (diameter similar to 100 nm) to the elongated structures including shapes like Y, T as well dumbbell (diameter similar to 40 nm and length similar to 150 nm). Interestingly for more than 50% of hydrazine ZnO micro-rods are formed. Such rods are of diameter similar to 120 mn having length of about 1 mu m for ZN to hydrazine ratio of 1:9, isolated as well as bundle of rods are seen in scanning electron microscopy (SEM). The X-ray diffraction (XRD) reveals the phase formation with average particle size of 37 nm as calculated using Scherrer's formula. The high-resolution transmission electron microscopy (HRTEM) is also done to confirm the d-spacing in ZnO. Gas sensing study for these samples shows high efficiency and selectivity towards LPG at all operating temperatures. Photoluminescence (PL) study for these samples is performed at room temperature to find potential application as photoelectric material. (C) 2008 Elsevier B.V. All rights reserved.</p>10aHydrazine10aLPG sensor10aNanostructures10aphotoluminescence10aZnO1 aNavale, Shalaka, C.1 aGosavi, S., W.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/controlled-synthesis-zno-nanospheres-micro-rods-and-its-gas-sensing-studies-001894nas a2200265   4500008004100000022001400041245008300055210006900138260006900207300001000276490000800286520099100294653002901285653002401314653001901338653001701357653002201374100002001396700001901416700001801435700002101453700001801474700002201492856011401514       2012                        eng d  a0925-838800aChemical deposition of CuInSe2 thin films by photoelectrochemical applications0 aChemical deposition of CuInSe2 thin films by photoelectrochemica  aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcJAN  a50-530 v5113 a<p>Copper indium diselenide films have been synthesized by chemical bath deposition method. The configuration of fabricated cell is n-CuInSe2|NaOH (1 M) + S (1 M) + Na2S (1 M)|C-(graphite). The photoelectrochemical cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that CuInSe2 thin films are n-type conductivity. The junction ideality factor is found to be 3.81. The flat band potential is found to be 0.763 V. The barrier height value is found to be 0.232 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency are found to be 310 mV, 20 mu A, 42.12% and 0.82%, respectively. Photoresponse shows lighted ideality factor which is 2.92. Spectral response shows the maximum current observed at 650 nm. (C) 2011 Published by Elsevier B.V.</p>10aChemical bath deposition10aFlat band potential10aPhoto response10aPower output10aSpectral response1 aHankare, P., P.1 aRathod, K., C.1 aChate, P., A.1 aGaradkar, K., M.1 aSathe, D., J.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/chemical-deposition-cuinse2-thin-films-photoelectrochemical-applications-002031nas a2200241   4500008004100000022001400041245007600055210006900131260010600200300001000306490000800316520116100324653002201485653001901507653001401526100002501540700002301565700002401588700002201612700002301634700002001657856011201677       2014                        eng d  a0042-207X00aCdS nanowires: ultra-long growth and enhanced field emission properties0 aCdS nanowires ultralong growth and enhanced field emission prope  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcMAR  a38-450 v1013 a<p>Here, we report the synthesis of ultra-long CdS nanowires with aspect ratio similar to 8 x 10(4) by simple route of thermal evaporation technique. A change in the vertical arrangement of quartz boats leads in to the synthesis of ultra-long CdS nanovvires via high degree of condensation. This technique is seen to be cost effective and easy. The growth of the nanowires is found to be increased very rapidly from few micrometers to few millimeters. The possible reason for the growth of the ultra-long CdS nanowires is discussed in detail. The turn-on field defined for the current density of similar to 0.1 mu A/cm(2) has been found to be similar to 1.4, 1.45, 1 and 0.17 V/mu m for specimen A, B, C and D (specimens A-D, synthesized by variation in synthesis parameters) respectively. The turn-on field of the specimen D (similar to 0.17 V/mu m) is found to be quite superior than the value reported for other CdS nanoforms which is very remarkable. Simple way of bulk fabrication leads to the low turn-on value which indicates a possible use of the present emitter in the micro/nanoelectronics devices. (C) 2013 Elsevier Ltd. All rights reserved.</p>10aCurrent stability10afield emission10asynthesis1 aChavan, Padmakar, G.1 aKashid, Ranjit, V.1 aBadhade, Satish, S.1 aMulla, Imtiaz, S.1 aMore, Mahendra, A.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/cds-nanowires-ultra-long-growth-and-enhanced-field-emission-properties-0