01672nas a2200217   4500008004100000022001400041245008400055210006900139260010600208300001400314490000700328520086000335653001801195653002501213100002001238700001801258700002001276700001801296700002201314856011801336       2006                        eng d  a0022-369700aNovel chemical synthetic route and characterization of zinc selenide thin films0 aNovel chemical synthetic route and characterization of zinc sele  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcNOV  a2310-23150 v673 a<p>Zinc selenide (ZnSe) thin film have been deposited using chemical bath method on non-conducting glass substrate in a tartarate bath containing zinc sulfate, ammonia, hydrazine hydrate, sodium selenosulfate in an aqueous alkaline medium at 333 K. The deposition parameter of the ZnSe thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, electrical measurements, atomic absorption spectroscopy (AAS). The ZnSe thin layers grown with polycrystalline zinc blende system along with some amorphous phase present in ZnSe film. The direct optical band gap `E-g' for the film was found to be 2.81 eV and electrical conductivity in the order of 10(-8)(Omega cm)(-1) with n-type conduction mechanism. (c) 2006 Elsevier Ltd. All rights reserved.</p>10achalcogenides10aelectronic materials1 aHankare, P., P.1 aChate, P., A.1 aDelekar, S., D.1 aAsabe, M., R.1 aMulla, Imtiaz, S.  uhttps://library.ncl.res.in/content/novel-chemical-synthetic-route-and-characterization-zinc-selenide-thin-films-0