01611nas a2200277   4500008004100000022001400041245005900055210005800114260007300172300001400245490000800259520071800267653002400985653001901009653002901028653000901057653000901066100002101075700002401096700002501120700002301145700002201168700003001190700002001220856009301240       2007                        eng d  a0169-433200aField emission investigations of RuO2-doped SnO2 wires0 aField emission investigations of RuO2doped SnO2 wires  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcSEP  a9159-91630 v2533 a<p>Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 x 10(4) A/cm(2) is drawn from the single wire emitter at an applied field of 8.46 x 10(4) V/mu m. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 LA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications. (c) 2007 Elsevier B.V. All rights reserved.</p>10adoped semiconductor10afield emission10afield enhancement factor10aRuO210aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aRamgir, Niranjan, S.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/field-emission-investigations-ruo2-doped-sno2-wires-001771nas a2200265   4500008004100000022001400041245006200055210006100117260007300178300001400251490000700265520091100272653002201183653001301205653001901218653000901237100002101246700002401267700002301291700002301314700002201337700003001359700002001389856009601409       2009                        eng d  a1293-255800aField emission investigation of single Fe-doped SnO2 wire0 aField emission investigation of single Fedoped SnO2 wire  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcJUN  a1114-11170 v113 a<p>Tin oxide submicronwires doped with Fe element were prepared by the thermal evaporation method. Morphological and structural characterizations revealed wires with sub micron size and crystalline in nature. The field electron emission from the single Fe:SnO2 wire was carried out in conventional field emission microscope. The Fowler-Nordheim plot obtained from I-V characteristics of the wire showed a linear behavior typical that of metal. The field enhancement factor estimated from the slope of the F-N plot is 7455 cm(-1), indicating that the field emission is from nanometric features of the emitter. A current density of 10 A/cm(2) has been obtained at an applied field of 4.845 x 10(3) V/mu m. The field emission current-time record at a current level of 1 mu A for more than 3 h duration is promising for various field emissions based applications. (C) 2009 Published by Elsevier Masson SAS.</p>10aCurrent stability10aFe doped10afield emission10aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aSathe, Bhaskar, R.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/field-emission-investigation-single-fe-doped-sno2-wire-001688nas a2200289   4500008004100000022001400041245008700055210006900142260009200211300001800303490000600321520071700327653001801044653001101062653001101073653001901084653001401103653000901117100002101126700002401147700001401171700002301185700002201208700003001230700002001260856011801280       2010                        eng d  a1745-808000aFabrication of In-doped SnO2 nanowire arrays and its field emission investigations0 aFabrication of Indoped SnO2 nanowire arrays and its field emissi  a4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLANDbTAYLOR & FRANCIS LTDcDEC  aPII 9312836630 v53 a<p>The field emission of In-doped SnO2 wire array has been performed in parallel plate diode configuration. A maximum current density of 60 mu A/cm2 is drawn from the emitter at an applied field of 4 V/mu m. The nonlinearity in the Fowler-Nordheim plot, characteristics of semiconductor emitter has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability recorded at a preset value of 1 mu A is observed to be good. The high emission current density, good current stability and mechanically robust nature of the wires offer unprecedented advantages as promising cold cathodes for many potential applications based on field emission.</p>10acold cathodes10adevice10aDoping10afield emission10aNanowires10aSnO21 aBhise, Ashok, B.1 aLate, Dattatray, J.1 aSathe, B.1 aMore, Mahendra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/fabrication-doped-sno2-nanowire-arrays-and-its-field-emission-investigations-001856nas a2200229   4500008004100000022001400041245007900055210006900134260009900203300001400302490000700316520106100323653001501384653001401399653000901413653001501422100001801437700001801455700002201473700002401495856010701519       2012                        eng d  a0272-884200aInfluence of Pd-loading on gas sensing characteristics of SnO2 thick films0 aInfluence of Pdloading on gas sensing characteristics of SnO2 th  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLANDbELSEVIER SCI LTDcAUG  a4835-48440 v383 a<p>Nanocrystalline pristine and 0.5, 1.5 and 3.0 wt% Pd loaded SnO2 were synthesized by a facile co-precipitation route. These powders were screen-printed on alumina substrates to form thick films to investigate their gas sensing properties. The crystal structure and morphology of different samples were characterized by using X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques. The 3.0 wt% Pd:SnO2 showed response of 85% toward 100 ppm of LPG at operating temperature of 250 degrees C with fast response (8 s) and quick recovery time (24 s). The high response toward LPG on Pd loading can be attributed to lowering of crystallite size (9 nm) as well as the role of Pd particles in exhibiting spill-over mechanism on the SnO2 surface. Also selectivity of 3.0 wt% Pd:SnO2 toward LPG was confirmed by measuring its response to other reducing gases like acetone (CH3COCH3), ethanol (C2H5OH) and ammonia (NH3) at optimum operating temperature. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.</p>10aLPG sensor10aPalladium10aSnO210aThick film1 aBagal, L., K.1 aPatil, J., Y.1 aMulla, Imtiaz, S.1 aSuryavanshi, S., S.  uhttps://library.ncl.res.in/content/influence-pd-loading-gas-sensing-characteristics-sno2-thick-films-002049nas a2200229   4500008004100000022001400041245009900055210006900154260009900223300001400322490000700336520120000343653002401543653001801567653002001585653000901605100001801614700001801632700002201650700002401672856012301696       2012                        eng d  a0272-884200aStudies on the resistive response of nickel and cerium doped SnO2 thick films to acetone vapor0 aStudies on the resistive response of nickel and cerium doped SnO  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLANDbELSEVIER SCI LTDcDEC  a6171-61790 v383 a<p>Undoped and Ni, Ce-doped nanocrystalline tin oxide were synthesized by co-precipitation route. Doped as well as undoped SnO2 compositions revealed single phase structure without any impurity. The lattice constant of SnO2 increases and the grain size decreases with doping of Ni and Ce. The responses of the sensing elements are evaluated by measuring the resistance change upon exposure to various test gases such as liquid petroleum gas (LPG), acetone, ethanol and ammonia. In comparison to LPG, ethanol, and ammonia the response towards acetone vapor increases markedly on simultaneous doping of Ni and Ce. For acetone vapors with 500 ppm at 300 degrees C, the undoped SnO2 shows 31% response, while with individual Ni or Ce doping it increases to 38 and 60%, respectively, however with simultaneous doping of Ni and Ce there is a significant enhancement up to 92%. The results of gas sensing measurements reveal that the thick films deposited on alumina substrates using screen printing technique give selectively a high response of (87%) with fast recovery (similar to 1 min) towards 100 ppm acetone at 300 degrees C. (c) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.</p>10a(Ni plus Ce)-doping10aAcetone vapor10aScreen-printing10aSnO21 aBagal, L., K.1 aPatil, J., Y.1 aMulla, Imtiaz, S.1 aSuryavanshi, S., S.  uhttps://library.ncl.res.in/content/studies-resistive-response-nickel-and-cerium-doped-sno2-thick-films-acetone-vapor-002109nas a2200241   4500008004100000022001400041245009800055210006900153260009500222300001100317490000700328520125300335653000801588653002001596653001101616653000901627100001801636700001801654700001801672700002201690700002401712856013101736       2013                        eng d  a1432-891700aAcetone vapour sensing characteristics of undoped and Zn, Ce doped SnO2 thick film gas sensor0 aAcetone vapour sensing characteristics of undoped and Zn Ce dope  aSTE 1C, JOSEPHS WELL, HANOVER WALK, LEEDS LS3 1AB, W YORKS, ENGLANDbMANEY PUBLISHINGcAPR  a98-1050 v173 a<p>The nanocrystalline materials of zinc and ceria doped tin oxide [(Zn+Ce)-SnO2] powders were synthesised by coprecipitation method and investigated for their sensing properties towards liquid petroleum gas (LPG), ethanol, ammonia and acetone vapour. The crystal structure and phase of the as synthesised and sintered powders were characterised by X-ray diffractometer and the microstructure by scanning electron microscopy. All the doped and undoped SnO2 compositions revealed single phase solid solution formation. Transmission electron microscope results indicated that well crystallised (Zn+Ce) doped SnO2 particles of size similar to 7 nm were obtained at the annealing temperature of 650 degrees C. The reduction in grain size of the metal oxide is a key factor to enhance the gas sensing properties. The doping of zinc, ceria in SnO2 has reduced the grain size and improved the gas response. The results of gas sensing measurements showed that the thick films deposited on alumina substrates using screen printing technique exhibited high response to acetone at an operating temperature of 300 degrees C. Further, the selectivity of the sensor towards acetone with respect to other reducing gases (LPG, ethanol and ammonia) was studied.</p>10aGas10aScreen printing10aSensor10aSnO21 aBagal, L., K.1 aPatil, J., Y.1 aBagal, K., N.1 aMulla, Imtiaz, S.1 aSuryavanshi, S., S.  uhttps://library.ncl.res.in/content/acetone-vapour-sensing-characteristics-undoped-and-zn-ce-doped-sno2-thick-film-gas-sensor-0