02173nas a2200229 4500008004100000022001400041245010300055210006900158260010600227300001200333490000700345520131000352653002301662653001801685100001801703700001801721700002001739700002101759700002201780700002001802856012101822 2008 eng d a0022-369700aSynthesis, characterization of chemically deposited indium selenide thin films at room temperature0 aSynthesis characterization of chemically deposited indium seleni aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcJAN a249-2540 v693 a

Polycrystalline In2Se3 semiconducting thin films were prepared by using relatively simple chemical bath deposition method at room temperature by the reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium. Various preparative conditions of thin film deposition are outlined. The as grown films were found to be transparent, uniform, well adherent and red in color. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, atomic absorption spectroscopy and energy dispersive atomic X-ray diffraction (EDAX). The XRD analysis of the film showed the presence of polycrystalline nature with hexagonal crystal structure. SEM study revels that the grains are homogenous, without cracks or pinholes and well covers the glass substrate. The optical absorption and electrical conductivity was measured. The direct optical band gap value for the films was found to be of the order of 2.35eV at room temperature and have specific electrical conductivity of the order of 10(-2) (Omega cm)(-1) showing n-type conduction mechanism. The utility of the adapted technique is discussed from the view-point of applications considering the optoelectric and structural data. (c) 2007 Elsevier Ltd. All rights reserved.

10aChemical synthesis10aSemiconductor1 aAsabe, M., R.1 aChate, P., A.1 aDelekar, S., D.1 aGaradkar, K., M.1 aMulla, Imtiaz, S.1 aHankare, P., P. uhttps://library.ncl.res.in/content/synthesis-characterization-chemically-deposited-indium-selenide-thin-films-room-001991nas a2200229 4500008004100000022001400041245011500055210006900170260010600239300001200345490000700357520109500364653002501459653001201484653001901496653002301515653001801538100002801556700002201584700002501606856013001631 2011 eng d a0025-540800aLow temperature pH dependent synthesis of flower-like ZnO nanostructures with enhanced photocatalytic activity0 aLow temperature pH dependent synthesis of flowerlike ZnO nanostr aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcMAY a771-7780 v463 a

In the present study we have synthesized flower-like ZnO nanostructures comprising of nanobelts of 20 nm width by template and surfactant free low-temperature (4 degrees C) aqueous solution route. The ZnO nanostructures exhibit flower-like morphology, having crystalline hexagonal wurtzite structure with (001) orientation. The flowers with size between 600 and 700 nm consist of ZnO units having crystallite size of similar to 40 nm. Chemical and structural characterization reveals a significant role of precursor: ligand molar ratio, pH, and temperature in the formation of single-step flower-like ZnO at low temperature. Plausible growth mechanism for the formation of flower-like structure has been discussed in detail. Photoluminescence studies confirm formation of ZnO with the defects in crystal structure. The flower-like ZnO nanostructures exhibit enhanced photochemical degradation of methylene blue (MB) with the increased concentration of ligand, indicating attribution of structural features in the photocatalytic properties. (C) 2010 Elsevier Ltd. All rights reserved.

10aCatalytic properties10aDefects10aNanostructures10aOptical properties10aSemiconductor1 aVaishampayan, Mukta, V.1 aMulla, Imtiaz, S.1 aJoshi, Satyawati, S. uhttps://library.ncl.res.in/content/low-temperature-ph-dependent-synthesis-flower-zno-nanostructures-enhanced-photocatalytic-001888nas a2200241 4500008004100000022001400041245008900055210006900144260006900213300001200282490000800294520105600302653002301358653001501381653001801396653001501414100001801429700001801447700002501465700002201490700002401512856011001536 2015 eng d a0925-400500aEffect of Pd and Ce on the enhancement of ethanol vapor response of SnO2 thick films0 aEffect of Pd and Ce on the enhancement of ethanol vapor response aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcFEB a383-3900 v2073 a

The undoped SnO2 and 4 wt% Ce-doped SnO2 were successfully synthesized by a facile co-precipitation route. The ternary systems were prepared by Pd-loading (0.5, 1.5 and 3.0 wt%) on the 4 wt% Ce-doped SnO2 nanoparticles. The structure and morphology of the nanocrystalline powders were investigated by X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques. The nanocrystalline powders were screen printed on the alumina substrates to form thick films to investigate their gas response properties. The gas response studies reveal that 4 wt% Ce-doped SnO2 with the loading of 3.0 wt% Pd exhibits high response (88%) towards ethanol (100 ppm) at an operating temperature of 250 degrees C with quick response (6 s) and rapid recovery (20 s). The high ethanol vapor response at lower operating temperature of this sensor is attributed to the spill-over mechanism of Pd particles present on the SnO2 surface and enhancement in alkalescence of SnO2 due to Ce-doping. (C) 2014 Elsevier B.V. All rights reserved.

10aCe-doped tin oxide10aGas sensor10aSemiconductor10aThick film1 aBagal, L., K.1 aPatil, J., Y.1 aVaishampayan, M., V.1 aMulla, Imtiaz, S.1 aSuryavanshi, S., S. uhttps://library.ncl.res.in/content/effect-pd-and-ce-enhancement-ethanol-vapor-response-sno2-thick-films-0