02031nas a2200241   4500008004100000022001400041245007600055210006900131260010600200300001000306490000800316520116100324653002201485653001901507653001401526100002501540700002301565700002401588700002201612700002301634700002001657856011201677       2014                        eng d  a0042-207X00aCdS nanowires: ultra-long growth and enhanced field emission properties0 aCdS nanowires ultralong growth and enhanced field emission prope  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcMAR  a38-450 v1013 a<p>Here, we report the synthesis of ultra-long CdS nanowires with aspect ratio similar to 8 x 10(4) by simple route of thermal evaporation technique. A change in the vertical arrangement of quartz boats leads in to the synthesis of ultra-long CdS nanovvires via high degree of condensation. This technique is seen to be cost effective and easy. The growth of the nanowires is found to be increased very rapidly from few micrometers to few millimeters. The possible reason for the growth of the ultra-long CdS nanowires is discussed in detail. The turn-on field defined for the current density of similar to 0.1 mu A/cm(2) has been found to be similar to 1.4, 1.45, 1 and 0.17 V/mu m for specimen A, B, C and D (specimens A-D, synthesized by variation in synthesis parameters) respectively. The turn-on field of the specimen D (similar to 0.17 V/mu m) is found to be quite superior than the value reported for other CdS nanoforms which is very remarkable. Simple way of bulk fabrication leads to the low turn-on value which indicates a possible use of the present emitter in the micro/nanoelectronics devices. (C) 2013 Elsevier Ltd. All rights reserved.</p>10aCurrent stability10afield emission10asynthesis1 aChavan, Padmakar, G.1 aKashid, Ranjit, V.1 aBadhade, Satish, S.1 aMulla, Imtiaz, S.1 aMore, Mahendra, A.1 aJoag, Dilip, S.  uhttps://library.ncl.res.in/content/cds-nanowires-ultra-long-growth-and-enhanced-field-emission-properties-0