02066nas a2200217   4500008004100000022001400041245012400055210006900179260007300248300001200321490000800333520125700341653001801598653001601616653002901632653000801661653000801669100002601677700001801703856012701721       2014                        eng d  a1381-116900aResistance to ionic pt insertion in oxygen excess LaMnO3 perovskite lattices and its effect in water gas shift reaction0 aResistance to ionic pt insertion in oxygen excess LaMnO3 perovsk  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcDEC  a534-5420 v3953 a<p>Pt doped and impregnated LaMnO3 perovskites are synthesized at different temperatures and Pt and Mn states are compared in an attempt to get insight into extent of lattice incorporation of Pt in perovskite. Various characterization studies indicate that oxygen excess system like LaMnO3 presents substantial resistance to B site doping with Pt. This behavior is different from other oxygen deficient perovskites like LaCoO3 and LaFeO3 in which lattice incorporation stabilizes the active species against sintering. Water gas shift reaction was used as a probe reaction to understand the effect of this difference in the activity. In case of LaMnO3, failure in lattice substitution leads to sintering and deactivation at high synthesis temperatures (&gt;= 700 degrees C) in both impregnated and doped samples. In doped samples, however, a strong interaction of Pt species with a persistent amorphous phase prevents sintering at lower synthesis temperature thereby enhancing the activity when compared to impregnated sample. The study reveals a possible mechanism in which only Pt(0) species is active with perovskite playing a minimal role in this system due to the resistance to lattice incorporation. (C) 2014 Elsevier B.V. All rights reserved.</p>10aOxygen excess10aPerovskites10aWater gas shift reaction10aXPS10aXRD1 aRajesh, Thattarathody1 aDevi, Nandini  uhttps://library.ncl.res.in/content/resistance-ionic-pt-insertion-oxygen-excess-lamno3-perovskite-lattices-and-its-effect-0