01989nas a2200205   4500008004100000022001400041245011700055210006900172260011000241300001400351490000700365520114700372100002801519700002001547700002001567700002401587700002101611700002301632856012801655       2015                        eng d  a1466-803300a3D Hetero-architecture of GdB6 nanoparticles on lessened cubic Cu2O nanowires: enhanced field emission behaviour0 a3D Heteroarchitecture of GdB6 nanoparticles on lessened cubic Cu  aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcMAR  a3936-39440 v173 a<p>The field emission properties (FE) of a heteroarchitecture comprised of gadolinium hexaboride nanoparticles uniformly decorated over Cu2O nanoneedles (GdB6/Cu2O) have been investigated at the base pressure of similar to 1 x 10(-8) mbar. Under the optimized pulsed laser deposition (PLD), a well-adhered coating of GdB6 nanoparticles on chemically synthesized cuprous oxide (Cu2O) nanoneedles has been obtained. A plausible growth mechanism of the hierarchical assembly of GdB6 nanoparticles on the Cu2O nanoneedles is explained on the basis of structural analysis carried out using SEM and TEM. A low turn-on field of similar to 2.3 V mu m(-1) (to draw an emission current density similar to 1 mu A cm(-2)) is observed along with stable emission current at the preset value of similar to 2 mu A over 4 h. The enhanced emission behaviour of the GdB6/Cu2O heteroarchitecture, in contrast to the pristine Cu2O nanoneedles, is attributed to its high aspect ratio and low work function. The observed FE results demonstrate GdB6/Cu2O heteroarchitecture as a potential candidate for application in various vacuum nano/microelectronic devices.</p>1 aSuryawanshi, Sachin, R.1 aSingh, Anil, K.1 aDeo, Meenal, S.1 aLate, Dattatray, J.1 aSinha, Sucharita1 aMore, Mahendra, A.  uhttps://library.ncl.res.in/content/3d-hetero-architecture-gdb6-nanoparticles-lessened-cubic-cu2o-nanowires-enhanced-field-002234nas a2200205   4500008004100000245010700041210006900148260000800217300001400225490000600239520149100245100002801736700002401764700002001788700002401808700002401832700002101856700002301877856012801900       2016                        eng d00aFacile approach towards fabrication of GdB6-ZnO heteroarchitecture as high currentdensity cold cathode0 aFacile approach towards fabrication of GdB6ZnO heteroarchitectur  cAUG  a3723-37290 v13 aThree dimensional (3D) GdB6-ZnO heteroarchitecture comprised of thin coating of GdB6 on self aligned ZnO urchins with pointed apex has been synthesized employing optimized Pulsed Laser Deposition (PLD) technique. The self aligned ZnO urchins on Zn substrate were obtained using hydrothermal route. The as-synthesized GdB6-ZnO heteroarchitecture was characterized using XRD, SEM, TEM XPS, and UPS in order to reveal its structural, morphological, chemical, and electronic properties. Interestingly, the GdB6-ZnO heteroarchitecture exhibits superior field emission (FE) behviour in contrast to the pristine ZnO urchins envisaged by extraction of very high emission current density of similar to 4.6 mA/cm(2) at an applied field of similar to 4.5 V/mm, against similar to 1.5 mA/cm(2) at an applied field of similar to 5.6 V/mm from the pristine ZnO urchins emitter. Furthermore, the GdB6-ZnOemitter exhibits good emission stability at pre-set value of similar to 5 mA over duration of more than 3 hours. The superior FE behaviour of the GdB6-ZnO is attributed to low work-function of GdB6 and presence of nanometric protrusions on the emitter surface, further enhancing the aspect ratio provided by the ZnO urchins. The present results demonstrate a facile approach towards fabrication of high current density cold cathodes due to rare earth hexaborides via designing hetero-architectures comprised of their well adherent ultrathin coating on high aspect ratio metal oxide nanostructures.1 aSuryawanshi, Sachin, R.1 aMistari, Chetan, D.1 aSingh, Anil, K.1 aPhase, Deodatta, M.1 aLate, Dattatray, J.1 aSinha, Sucharita1 aMore, Mahendra, A.  uhttps://library.ncl.res.in/content/facile-approach-towards-fabrication-gdb6-zno-heteroarchitecture-high-currentdensity-cold02260nas a2200193   4500008004100000245008900041210006900130260000800199300002400207490000800231520156900239100002801808700002001836700002401856700002401880700002101904700002301925856011801948       2016                        eng d00aPulsed laser-deposited nanocrystalline GdB6 thin films on W and Re as field emitters0 aPulsed laserdeposited nanocrystalline GdB6 thin films on W and R  cOCT  aArticle Number: 8990 v1223 aGadolinium hexaboride (GdB6) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of GdB6 on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of GdB6/W and GdB6/Re emitters were performed in a planar diode configuration at the base pressure similar to 10(-8) mbar. The GdB6/W and GdB6/Re tip emitters deliver high emission current densities of similar to 1.4 and 0.811 mA/cm(2) at an applied field of similar to 6.0 and 7.0 V/mu m, respectively. The Fowler-Nordheim (F-N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (beta) estimated using the slopes of the F-N plots indicate that the PLD GdB6 coating on Wand Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the GdB6/W and GdB6/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the GdB6/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, similar to 1.6 +/- 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the GdB6/W emitter are markedly different from that of GdB6/Re emitter, which can be attributed to the growth of GdB6 films on W and Re substrates.1 aSuryawanshi, Sachin, R.1 aSingh, Anil, K.1 aPhase, Deodatta, M.1 aLate, Dattatray, J.1 aSinha, Sucharita1 aMore, Mahendra, A.  uhttps://library.ncl.res.in/content/pulsed-laser-deposited-nanocrystalline-gdb6-thin-films-w-and-re-field-emitters