01956nas a2200253   4500008004100000245010700041210006900148260000800217300001400225490000600239520115400245653001201399653000801411653001601419653001801435653000801453100001601461700001801477700002301495700001801518700001901536700001901555856012801574       2024                        eng d00aHigh-performance photodetector from p-n junction of vertically aligned SnS2 and reduced graphene oxide0 aHighperformance photodetector from pn junction of vertically ali  cSEP  a6965-69730 v63 a<p>
	Semiconducting 2D transition metal dichalcogenides (TMDC) became very popular in photodetection due to their high mobility and high rate of generating electron and hole pairs. Over the past decade, MoS2 and WS2 became the most popular TMDC for several applications. On the other hand, due to the complex synthesis process compared to MoS2 and WS2, SnS2 became a less popular 2D material for photodetection. We synthesized vertically aligned SnS2 flakes by a chemical vapor deposition (CVD) process with three temperature zones with controlled argon (Ar) gas flow. Pristine SnS2-based devices are not very suitable for photodetection applications because of their low photo-to-dark current ratio (I ph /I (dark) ), high response time, and low stability. So, they need to be decorated with oppositely doped materials. We decorated pristine SnS2-based devices with rGO nanoparticles, which significantly increased the device's performance. We found a high responsivity (R) of 1.33 A/W, detectivity (D) of 6.95 x 10(11) Jones, I ph /I dark of 102, and a rise time of 0.241 ms (fall time of 1.318 ms) with the rGO decorated SnS2-based device.</p>
10a2D-SnS210aCVD10ap-njunction10aphotodetector10arGO1 aDas, Chayan1 aKumar, Suresh1 aDambhare, Neha, V.1 aKumar, Mahesh1 aRath, Arup, K.1 aSahu, Satyajit  uhttps://library.ncl.res.in/content/high-performance-photodetector-p-n-junction-vertically-aligned-sns2-and-reduced-graphene02419nas a2200265   4500008004100000245014000041210006900181260000900250300001600259490000600275520156400281653000701845653000801852653001901860653001801879653000901897653000801906100001601914700001801930700001901948700001801967700001901985700001902004856013002023       2025                        eng d00aWS2 nanoparticle-decorated, vertically aligned SnS2-based high-performance heterostructures for ambient-stable ultrafast photodetection0 aWS2 nanoparticledecorated vertically aligned SnS2based highperfo  cOCT   a21047-210560 v83 a<p>
	The development of visible-light photodetectors with high responsivity, rapid response, and long-term ambient stability remains a critical challenge in optoelectronics. Here, we report a high-performance photodetector based on a vertically aligned SnS2 film interfaced with WS2 nanoparticles, forming a p-n heterojunction. This device is fabricated using a scalable two-step method-chemical vapor deposition (CVD) for SnS2 growth and solution-based drop-casting for WS2 deposition-enabling precise control over the heterointerface, but trap states are inevitable due to the use of thermal CVD and the drop-casting method. The resulting photodetector exhibits remarkable optoelectronic characteristics, including a responsivity of 0.76 A/W, a detectivity of 7.56 x 10(11) Jones, a photo-to-dark current ratio of 119, and a fast rise time of 0.297 ms under visible illumination. These performance metrics are directly attributed to the optimized heterointerface, where the built-in electric field at the nanoscale WS2/SnS2 junctions promotes efficient charge separation and minimizes recombination losses. Notably, the device retains over 95% of its initial performance even after 1 week of ambient exposure, highlighting its superior environmental robustness. This work introduces an interface-engineering strategy that leverages the unique electronic properties of earth-abundant, nontoxic two-dimensional materials, offering a viable pathway for scalable, high-speed, and stable photodetectors suitable for next-generation optoelectronic systems.</p>
10a2D10aCVD10aheterojunction10aphotodetector10aSnS210aWS21 aDas, Chayan1 aKumar, Suresh1 aSharma, Anjali1 aKumar, Mahesh1 aRath, Arup, K.1 aSahu, Satyajit  uhttps://library.ncl.res.in/content/ws2-nanoparticle-decorated-vertically-aligned-sns2-based-high-performance-heterostructures