01976nas a2200217 4500008004100000022001400041245013700055210006900192260000800261300001600269490000700285520120700292100001601499700001701515700001801532700002301550700001801573700001901591700001901610856012901629 2023 eng d a1463-907600aPhotogating induced high sensitivity and speed from heterostructure of few-layer MoS2 and reduced graphene oxide-based photodetector0 aPhotogating induced high sensitivity and speed from heterostruct cNOV a30419-304270 v253 a

Over the past few years, two-dimensional transition metal dichalcogenides (2D-TMDC) have attracted huge attention due to their high mobility, high absorbance, and high performance in generating excitons (electron and hole pairs). Especially, 2D molybdenum disulfide (MoS2) has been extensively used in optoelectronic and photovoltaic applications. Due to the low photo-to-dark current ratio (I-photo/dark) and low speed, pristine MoS2-based devices are unsuitable for these applications. So, they need some improvements, i.e., by adding layers or decorating with materials of complementary majority charges. In this work, we decorated pristine MoS2 with reduced graphene oxide (rGO) and got improved dark current, I-photo/dark, and response time. When we compared the performance of pristine MoS2 based device and rGO decorated MoS2 based device, the rGO/MoS2-based device showed an improved performance of responsivity of 3.36 A W-1, along with an I-photo/dark of about 154. The heterojunction device exhibited a detectivity of 4.75 x 10(12) Jones, along with a very low response time of 0.184 ms. The stability is also outstanding having the same device performance even after six months.

1 aDas, Chayan1 aKumar, Ashok1 aKumar, Suresh1 aDambhare, Neha, V.1 aKumar, Mahesh1 aRath, Arup, K.1 aSahu, Satyajit uhttps://library.ncl.res.in/content/photogating-induced-high-sensitivity-and-speed-heterostructure-few-layer-mos2-and-reduced01956nas a2200253 4500008004100000245010700041210006900148260000800217300001400225490000600239520115400245653001201399653000801411653001601419653001801435653000801453100001601461700001801477700002301495700001801518700001901536700001901555856012801574 2024 eng d00aHigh-performance photodetector from p-n junction of vertically aligned SnS2 and reduced graphene oxide0 aHighperformance photodetector from pn junction of vertically ali cSEP a6965-69730 v63 a

Semiconducting 2D transition metal dichalcogenides (TMDC) became very popular in photodetection due to their high mobility and high rate of generating electron and hole pairs. Over the past decade, MoS2 and WS2 became the most popular TMDC for several applications. On the other hand, due to the complex synthesis process compared to MoS2 and WS2, SnS2 became a less popular 2D material for photodetection. We synthesized vertically aligned SnS2 flakes by a chemical vapor deposition (CVD) process with three temperature zones with controlled argon (Ar) gas flow. Pristine SnS2-based devices are not very suitable for photodetection applications because of their low photo-to-dark current ratio (I ph /I (dark) ), high response time, and low stability. So, they need to be decorated with oppositely doped materials. We decorated pristine SnS2-based devices with rGO nanoparticles, which significantly increased the device's performance. We found a high responsivity (R) of 1.33 A/W, detectivity (D) of 6.95 x 10(11) Jones, I ph /I dark of 102, and a rise time of 0.241 ms (fall time of 1.318 ms) with the rGO decorated SnS2-based device.

10a2D-SnS210aCVD10ap-njunction10aphotodetector10arGO1 aDas, Chayan1 aKumar, Suresh1 aDambhare, Neha, V.1 aKumar, Mahesh1 aRath, Arup, K.1 aSahu, Satyajit uhttps://library.ncl.res.in/content/high-performance-photodetector-p-n-junction-vertically-aligned-sns2-and-reduced-graphene02292nas a2200361 4500008004100000022001400041245009600055210006900151260000900220300001400229490000700243520118000250653001101430653001101441653001501452653000901467653002501476653002301501100002601524700001601550700001901566700001801585700002501603700002601628700002001654700001701674700002001691700002101711700002901732700002001761700002401781856012501805 2025 eng d a1948-587500aSynthesis and evaluation of novel aza-aromatics as dual 5-HT2A and 5-HT2C receptor agonists0 aSynthesis and evaluation of novel azaaromatics as dual 5HT2A and cDEC  a2435-24430 v163 a

The 5-HT2A and 5-HT2C receptors are key therapeutic targets for CNS disorders. We investigated whether a nonhallucinogenic dual 5-HT2A/5-HT2C agonist could offer novel treatment potential. Large screening of in-house structurally diverse compounds revealed centhaquin, an FDA-approved hypovolemic shock drug, as a selective 5-HT2C agonist (EC50: 35 nM). We then synthesized 22 aza-aryl analogs with modified piperazine groups, and identified two dual agonists, 3ci and 3dh (EC50 < 1 mu M), with no 5-HT2B activity up to 10 mu M. Molecular docking highlighted critical interactions with Ser159 (5-HT2A) and Ser138 (5-HT2C) on the upper side of the orthosteric binding pocket. Pharmacokinetic studies in mice demonstrated that 3ci was rapidly absorbed in the plasma and brain (T-max = 0.08 h; C-max = 936.4 ng/mL plasma, 2446.8 ng/g brain). Both compounds (3ci and 3dh, 20 mg/kg, i.p.) triggered a head-twitch response but were less potent than the hallucinogenic control 2,5-dimethoxy-4-iodoamphetamine, suggesting a reduced hallucinogenic liability. These results highlight 3ci as a promising lead for developing 5-HT2A/2C dual agonists to treat CNS disorders.

10a5-HT2A10a5-HT2C10aCenthaquin10aGPCR10aHead Twitch Response10aSerotonin Receptor1 aAdhikari, Amit, Singh1 aYadav, Annu1 aPandit, Soumen1 aKumar, Suresh1 aPandey, Vinay, Kumar1 aMaurya, Arvind, Kumar1 aUmrao, Deepmala1 aChand, Diwan1 aMaity, Debalina1 aGayen, Jiaur, R.1 aSrivastava, Kinshuk, Raj1 aYadav, Prem, N.1 aMajumdar, Nilanjana uhttps://library.ncl.res.in/content/synthesis-and-evaluation-novel-aza-aromatics-dual-5-ht2a-and-5-ht2c-receptor-agonists02419nas a2200265 4500008004100000245014000041210006900181260000900250300001600259490000600275520156400281653000701845653000801852653001901860653001801879653000901897653000801906100001601914700001801930700001901948700001801967700001901985700001902004856013002023 2025 eng d00aWS2 nanoparticle-decorated, vertically aligned SnS2-based high-performance heterostructures for ambient-stable ultrafast photodetection0 aWS2 nanoparticledecorated vertically aligned SnS2based highperfo cOCT  a21047-210560 v83 a

The development of visible-light photodetectors with high responsivity, rapid response, and long-term ambient stability remains a critical challenge in optoelectronics. Here, we report a high-performance photodetector based on a vertically aligned SnS2 film interfaced with WS2 nanoparticles, forming a p-n heterojunction. This device is fabricated using a scalable two-step method-chemical vapor deposition (CVD) for SnS2 growth and solution-based drop-casting for WS2 deposition-enabling precise control over the heterointerface, but trap states are inevitable due to the use of thermal CVD and the drop-casting method. The resulting photodetector exhibits remarkable optoelectronic characteristics, including a responsivity of 0.76 A/W, a detectivity of 7.56 x 10(11) Jones, a photo-to-dark current ratio of 119, and a fast rise time of 0.297 ms under visible illumination. These performance metrics are directly attributed to the optimized heterointerface, where the built-in electric field at the nanoscale WS2/SnS2 junctions promotes efficient charge separation and minimizes recombination losses. Notably, the device retains over 95% of its initial performance even after 1 week of ambient exposure, highlighting its superior environmental robustness. This work introduces an interface-engineering strategy that leverages the unique electronic properties of earth-abundant, nontoxic two-dimensional materials, offering a viable pathway for scalable, high-speed, and stable photodetectors suitable for next-generation optoelectronic systems.

10a2D10aCVD10aheterojunction10aphotodetector10aSnS210aWS21 aDas, Chayan1 aKumar, Suresh1 aSharma, Anjali1 aKumar, Mahesh1 aRath, Arup, K.1 aSahu, Satyajit uhttps://library.ncl.res.in/content/ws2-nanoparticle-decorated-vertically-aligned-sns2-based-high-performance-heterostructures