02092nas a2200253   4500008004100000245007200041210006900113260000800182300001400190490000600204520132000210653002101530653001401551653002401565653001601589653001701605100001801622700001701640700001901657700001801676700002201694700001901716856010301735       2022                        eng d00aCdSe quantum dot-based nanocomposites for ultralow-power memristors0 aCdSe quantum dotbased nanocomposites for ultralowpower memristor  cJUN  a8502-85100 v53 a<p>
	The explosion in digital communication with the huge amount of data and the internet of things (IoT) led to the increasing demand for data storage technology with faster operation speed, high-density stacking, nonvolatility, and low power consumption for saving energy. Metal chalcogenide-based quantum dots (QDs) show excellent nonvolatile resistive memory behavior owing to their tunable electronic states and control in trap states by passivating the surface with different ligands. Here, we synthesized high-quality colloidal monodispersed CdSe QDs by the hot injection method. The CdSe QDs were blended with an organic polymer, poly(4-vinylpyridine) (PVP), to fabricate an Al\textbackslashCdSe-PVP\textbackslashAl device. Our device shows excellent bipolar nonvolatile resistive random access memory (RRAM) switching behavior with a high current ON/OFF ratio (I-ON/OFF) of 6.1 x 10(4), and it consumes ultralow power. The charge trapping and detrapping in the potential well formed by the CdSe QD and PVP combination result in resistive switching. This CdSe-PVP-based resistive random access memory (RRAM) device with a high I-ON/OFF, ultrafast switching speed, high endurance, low operating voltage, and long retention period can be used as a high-performance and ultralow-power memristive device.</p>
10amemory switching10amemristor10ametal chalcogenides10anonvolatile10aquantum dots1 aBera, Jayanta1 aBetal, Atanu1 aSharma, Ashish1 aShankar, Uday1 aRath, Arup, Kumar1 aSahu, Satyajit  uhttps://library.ncl.res.in/content/cdse-quantum-dot-based-nanocomposites-ultralow-power-memristors02631nas a2200289   4500008004100000245014600041210006900187260000800256300001400264490000600278520164500284653001801929653001801947653002701965653001701992653002402009653003402033653000802067100001702075700001902092700001802111700002302129700001902152700001902171700001902190856013202209       2024                        eng d00aScanning tunneling microscopy investigation of synaptic behavior in AgInS2 quantum dots: effect of ion transport in neuromorphic applications0 aScanning tunneling microscopy investigation of synaptic behavior  cMAR  a7226-72360 v73 a<p>
	Scanning tunneling microscopy (STM) is a powerful technique for investigating the nanoscale properties of functional materials. Additionally, scanning tunneling spectroscopy (STS) facilitates the determination of the local density of states (LDOS) within the material. In this study, we present an exploration of the resistive switching (RS) properties and neuromorphic computing capabilities of individual AgInS2 quantum dots, utilizing STM and STS techniques. By examining the material's bandgap and its temperature dependence, we uncover a nonlinear variation below the Debye temperature and a linear trend at higher temperatures. Moreover, STS measurements demonstrate changes in the conducting states induced by localized pulses, further confirming the unique characteristics of the quantum dots. The experimental devices constructed by using these quantum dots effectively replicate the RS properties observed at the nanoscale. To assess the neuromorphic application of the devices, pulse transient measurements simulating the learning and forgetting processes were conducted. The gradual set and reset processes successfully mimic the information retention and erasure capabilities essential for neuromorphic computing. Notably, the resistive switching mechanism in these devices is attributed to localized ionic transport, which highlights the significant involvement of ionic species in the observed RS behavior. The outcomes of this study contribute to the fundamental understanding of RS properties in single AgInS2 quantum dots and offer valuable insights into their potential applications in neuromorphic computing.</p>
10acorona poling10aIon transport10aneuromorphic computing10aquantum dots10aresistive switching10aScanning tunneling microscopy10aSTS1 aBetal, Atanu1 aChetia, Anupam1 aBera, Jayanta1 aSaikia, Dibyajyoti1 aSharma, Ashish1 aRath, Arup, K.1 aSahu, Satyajit  uhttps://library.ncl.res.in/content/scanning-tunneling-microscopy-investigation-synaptic-behavior-agins2-quantum-dots-effect-ion