01866nas a2200253   4500008004100000022001400041245011600055210006900171260000800240300001100248490000800259520101600267653003201283653001801315653001401333653001801347653003701365653001501402100001501417700001901432700001801451700001801469856012501487       2022                        eng d  a0040-609000aTuning of work function of ZnO by doping and co-doping: an investigation using X-ray photoelectron spectroscopy0 aTuning of work function of ZnO by doping and codoping an investi  cNOV  a1395380 v7613 a<p>
	The shift in the work function of the ZnO thin film upon varying codoping ratio has been investigated by X-ray photoelectron spectroscopy. A notable shift of 0.2 eV in the work function was achieved in the films when the Al: In doping ratio was changed from 0:10 to 10:0. The elemental composition of the dopants obtained from XPS analysis showed the presence of more amount of In dopant than Al in codoped ZnO films. In this way a clear understanding of the variation in electrical properties on dopant ratio is obtained. A decrease in work function was also observed with the increase in free carrier concentration when the codopant ratio is changed. The effects of Burstein moss, band narrowing, and band renormalization observed in the bandgap were explained by an upward and downward shift of valence band maxima of the corresponding thin films. The controllable work function of the codoped ZnO films by varying the doping ratio offers excellent potential advantages in optoelectronic devices.</p>
10aIndium -Aluminum co -doping10aSpray coating10athin film10aWork function10aX-ray photoelectron spectroscopy10aZinc oxide1 aSoumya, K.1 aSelvam, Packia1 aVinod, C., P.1 aPotty, S., N.  uhttps://library.ncl.res.in/content/tuning-work-function-zno-doping-and-co-doping-investigation-using-x-ray-photoelectron02034nas a2200181   4500008004100000022001400041245011800055210006900173260000800242300001200250490000700262520139000269100001501659700001901674700001801693700001801711856012301729       2025                        eng d  a0022-246100aEnhanced light-matter interaction in gas nitridation-derived TiNx thin films for potential plasmonic applications0 aEnhanced lightmatter interaction in gas nitridationderived TiNx   cJAN  a178-1940 v603 a<p>
	Titanium nitride is a substitute material exhibiting improved opto-electrical characteristics suitable for plasmonic purposes with adjustable attributes. In this study, we have embraced an innovative methodology for the fabrication of titanium nitride thin coatings via the nitridation of RF magnetron-sputtered titanium metallic films for surface plasmon resonance utilisation. The augmented electrical and optical features of TiN thin coatings prepared through the nitridation procedure are reported for the first time. The metallic coatings underwent gas nitridation at diverse temperatures within the range of 450-600 degrees C. The titanium nitride phase evolution in the coatings was corroborated by x-ray diffraction and x-ray photoelectron spectroscopy examinations. The dielectric function is deduced from reflection spectra through Drude-Lorentz model fitting, and the manifestation of surface plasmon excitation in the visible region was confirmed by correlating with carrier concentration assessments and by ensuring the required negative permittivity in the region. The red shift of screened plasma wavelength was observed with the nitridation temperature, and the same is varied in the wavelength range 400-700 nm. Ultimately, surface plasmons were excited in coatings with optimised thickness using Kretschmann configuration in wavelength interrogation mode.</p>
1 aTony, Liya1 aSelvam, Packia1 aVinod, C., P.1 aPotty, S., N.  uhttps://library.ncl.res.in/content/enhanced-light-matter-interaction-gas-nitridation-derived-tinx-thin-films-potential