02336nas a2200253   4500008004100000022001400041245005400055210005400109260008100163300002700244490000600271520147600277653003101753653003001784653001901814653001801833100002801851700002201879700002401901700002401925700002301949700002401972856008601996       2016                        eng d  a2053-159100aEnhanced field emission behavior of layered MoSe20 aEnhanced field emission behavior of layered MoSe2  aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcMAR  aArticle Number: 0350030 v33 a<p>Herein, we report one step facile chemical vapor deposition method for synthesis of single-layer MoSe2 nanosheets with average lateral dimension similar to 60 mu m on 300 nm SiO2/Si and n-type silicon substrates and field emission investigation of MoSe2/Si at the base pressure of similar to 1 x 10(-8) mbar. The morphological and structural analyses of the as-deposited single-layer MoSe2 nanosheets were carried out using an optical microscopy, Raman spectroscopy and atomic force microscopy. Furthermore, the values of turn-on and threshold fields required to extract an emission current densities of 1 and 10 mu A cm(-2), are found to be similar to 1.9 and similar to 2.3 V mu m(-1), respectively. Interestingly, the MoSe2 nanosheet emitter delivers maximum field emission current density of similar to 1.5 mA cm(-2) at a relatively lower applied electric field of similar to 3.9 V mu m(-1). The long term operational current stability recorded at the preset values of 35 mu A over 3 hr duration and is found to be very good. The observed results demonstrates that the layered MoSe2 nanosheet based field emitter can open up many opportunities for their potential application as an electron source in flat panel display, transmission electron microscope, and x-ray generation. Thus, the facile one step synthesis approach and robust nature of single-layer MoSe2 nanosheets emitter can provide prospects for the future development of practical electron sources.</p>10aatomically thin nanosheets10achemical vapor deposition10afield emission10alayered MoSe21 aSuryawanshi, Sachin, R.1 aPawbake, Amit, S.1 aPawar, Mahendra, S.1 aJadkar, Sandesh, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/enhanced-field-emission-behavior-layered-mose202515nas a2200313   4500008004100000245012200041210006900163260000800232300001400240490000600254520147300260653003801733653001901771653001801790653002001808653001801828100002501846700001601871700002501887700001601912700001601928700002401944700002301968700001701991700002702008700001702035700002602052856012302078       2026                        eng d00aField emission performance of 2D Ti2CT x (T x = O2, F2, O-F) MXene: experimental insights and theoretical endorsement0 aField emission performance of 2D Ti2CT x T x O2 F2 OF MXene expe  cAPR  a6775-67870 v93 a<p>
	Field emission (FE) is an important electron emission mechanism for vacuum microelectronic devices; however, conventional emitters often exhibit high turn-on fields, limited emission stability, and degradation during prolonged operation. Two-dimensional MXenes have recently emerged as promising FE materials due to their remarkable electrical conductivity, comparatively low work function, and tunnelable surface terminations. Nevertheless, most studies have focused on Ti3C2T x MXene, while other compositions such as Ti2CT x remain largely unexplored, particularly regarding the influence of surface terminal groups on their electronic and emission properties. Herein, Ti2CT x (T x = -F2, -O2, -OF) MXene was synthesized via selective chemical etching of the Ti2AlC MAX phase and investigated for its FE characteristics. The material exhibits a polycrystalline hexagonal layered structure with a high specific surface area of 349.02 m2 g-1. Ti2CT x MXene demonstrates excellent FE performance with a low turn-on field of 1.56 V mu m-1 and a threshold field of 2.0 V mu m-1 (at 10 mu A cm-2), along with a stable emission for 4 h. Density functional theory calculations further reveal that surface terminations strongly influence the electronic structure and work function, with the experimental value of 4.66 eV closely matching the -F2 termination. These results highlight Ti2CT x MXene as a promising material for stable and efficient FE applications.</p>
10a2D Ti2CT <italic>x</italic> MXene10afield emission10aTDOS and PDOS10aTurn-on voltage10aWork function1 aKakade, Prashant, M.1 aAher, Rahul1 aKachere, Avinash, R.1 aCho, Jinill1 aDeore, Amol1 aJadkar, Sandesh, R.1 aChauhan, Inderjeet1 aKim, Taesung1 aMandlik, Nandkumar, T.1 aKim, Ji, Man1 aBulakhe, Ravindra, N.  uhttps://library.ncl.res.in/content/field-emission-performance-2d-ti2ct-x-t-x-o2-f2-o-f-mxene-experimental-insights-and