01612nas a2200217 4500008004100000022001400041245006000055210005900115260007100174300001400245490000600259520089400265653002201159653002201181653002301203653001901226653000801245100002301253700002401276856009401300 2014 eng d a1944-824400aTemperature Dependent Phonon Shifts in Single-Layer WS20 aTemperature Dependent Phonon Shifts in SingleLayer WS2 a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcJAN a1158-11630 v63 a

Atomically thin two-dimensional tungsten disulfide (WS2) sheets have attracted much attention due to their potential for future nanoelectronic device applications. We report first experimental investigation on temperature dependent Raman spectra of single-layer WS2 prepared using micromechanical exfoliation. Our temperature dependent Raman spectroscopy results shows that the E-2g(1) and A(1g) modes of single-layer WS2 soften as temperature increases from 77 to 623 K. The calculated temperature coefficients of the frequencies of 2LA(M), E-2g(1), A(1g), and A(1g)(M) + LA(M) modes of single-layer WS2 were observed to be -0.008, -0.006, -0.006, and -0.01 cm(-1) K-1, respectively. The results were explained in terms of a double resonance process which is active in atomically thin nanosheet. This process can also be largely applicable in other emerging single-layer materials.

10alayered materials10aphonon vibrations10aRaman spectroscopy10athermal effect10aWS21 aThripuranthaka, M.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-phonon-shifts-single-layer-ws2-000783nas a2200169 4500008004100000022001400041245012500055210006900180260012500249300001100374490000800385100002300393700002300416700002600439700002400465856012400489 2014 eng d a0003-695100aTemperature dependent Raman spectroscopy of chemically derived few layer MoS2 and WS2 nanosheets (vol 104, 081911, 2014)0 aTemperature dependent Raman spectroscopy of chemically derived f aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScMAR a1299010 v1041 aThripuranthaka, M.1 aKashid, Ranjit, V.1 aRout, Chandra, Sekhar1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-raman-spectroscopy-chemically-derived-few-layer-mos2-and-ws2-101461nas a2200181 4500008004100000022001400041245010100055210006900156260008700225300001100312490000800323520072800331100002301059700002301082700002601105700002401131856012401155 2014 eng d a0003-695100aTemperature dependent Raman spectroscopy of chemically derived few layer MoS2 and WS2 nanosheets0 aTemperature dependent Raman spectroscopy of chemically derived f a1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScFEB a0819110 v1043 aWe have systematically investigated the temperature dependent Raman spectroscopy behavior of a few layered MoS2 and WS2 nanosheets synthesized using simple hydrothermal method. Our result reveals A(1g) and E-2g(1) modes soften as temperature increases from 77 K to 623 K. This behavior can be explained in terms of a double resonance process which is active in single-and few layer thick nanosheets. The frequency shifts and peak broadening can provide unambiguous, nondestructive, and accurate information of a few layered MoS2 and WS2. This mechanism can also be applicable in characterizing the structural, optical, electronic, and vibrational properties of other emerging layered materials. (c) 2014 AIP Publishing LLC.1 aThripuranthaka, M.1 aKashid, Ranjit, V.1 aRout, Chandra, Sekhar1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-raman-spectroscopy-chemically-derived-few-layer-mos2-and-ws2-202016nas a2200193 4500008004100000022001400041245011700055210006900172260007700241300001400318490000700332520123600339100002401575700002801599700002401627700002401651700001901675856012801694 2014 eng d a1439-423500aThermal expansion, anharmonicity and temperature-dependent Raman spectra of single- and few-layer MoSe2 and WSe20 aThermal expansion anharmonicity and temperaturedependent Raman s aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcJUN a1592-15980 v153 a

We report the temperature-dependent Raman spectra of single-and few-layer MoSe2 and WSe2 in the range 77-700 K. We observed linear variation in the peak positions and widths of the bands arising from contributions of anharmonicity and thermal expansion. After characterization using atomic force microscopy and high-resolution transmission electron microscopy, the temperature coefficients of the Raman modes were determined. Interestingly, the temperature coefficient of the A(2u)(2) mode is larger than that of the A(1g) mode, the latter being much smaller than the corresponding temperature coefficients of the same mode in single-layer MoS2 and of the G band of graphene. The temperature coefficients of the two modes in single-layer MoSe2 are larger than those of the same modes in single-layer WSe2. We have estimated thermal expansion coefficients and temperature dependence of the vibrational frequencies of MoS2 and MoSe2 within a quasi-harmonic approximation, with inputs from first-principles calculations based on density functional theory. We show that the contrasting temperature dependence of the Raman-active mode A(1g) in MoS2 and MoSe2 arises essentially from the difference in their strainphonon coupling.

1 aLate, Dattatray, J.1 aShirodkar, Sharmila, N.1 aWaghmare, Umesh, V.1 aDravid, Vinayak, P.1 aRao, C., N. R. uhttps://library.ncl.res.in/content/thermal-expansion-anharmonicity-and-temperature-dependent-raman-spectra-single-and-few-001832nas a2200205 4500008004100000022001400041245007000055210006900125260007100194300001400265490000600279520110600285653002101391653002201412653002201434653002301456653001901479100002401498856010401522 2015 eng d a1944-824400aTemperature dependent phonon shifts in few-layer black phosphorus0 aTemperature dependent phonon shifts in fewlayer black phosphorus a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcMAR a5857-58620 v73 a

Atomically thin two-dimensional (2D) sheets of black phosphorus have attracted much attention due to their potential for future nanoelectronic and photonics device applications. Present investigations deal with the temperature dependent phonon shifts in a few-layer black phosphorus nanosheet sample prepared using micromechanical exfoliation on a 300 nm SiO2/Si substrate. The temperature dependent Raman spectroscopy experiments were carried out on a few-layer black phosphorus sample, which depicts softening of Ag-1 B-2g, and A(g)(2) modes as temperature increases from 77 to 673 K. The calculated temperature coefficients for Ag-1, B-2g, and A(g)(2) modes of the few-layer black phosphorus nanosheet sample were observed to be -0.01, -0.013, and -0.014 cm(-1) K-1, respectively. The temperature dependent softening modes of black phosphorus results were explained on the basis of a double resonance process which is more active in an atomically thin sample. This process can also be fundamentally pertinent in other promising and emerging 2D ultrathin layer and heterostructured materials.

10ablack phosphorus10alayered materials10aphonon vibrations10aRaman spectroscopy10athermal effect1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-phonon-shifts-few-layer-black-phosphorus-002554nas a2200325 4500008004100000022001400041245010200055210006900157260007100226300001600297490000600313520142000319653002201739653002201761653002301783653001901806653002101825653002001846100002201866700002301888700002001911700002201931700002001953700002301973700002401996700003102020700003002051700002402081856012302105 2015 eng d a1944-824400aTemperature-dependent raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets0 aTemperaturedependent raman spectroscopy of titanium trisulfide T a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcNOV a24185-241900 v73 a

Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community because it presents a direct bandgap of similar to 1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm(2) V-1 s(-1). However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction that can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS3 through temperature-dependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 to 570 K due to anharmonic vibrations of the lattice, which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS3 modes is more pronounced than that observed in other 2D semiconductors, such as MoS2, MoSe2, WSe2, and black phosphorus (BP). This marked temperature dependence of the Raman spectra could be exploited to determine the temperature of TiS3 nanodevices by using Raman spectroscopy as a noninvasive and local thermal probe. Interestingly, the TiS3 nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to lower interlayer coupling in the nanosheets.

10a2D semiconductors10alayered materials10aRaman spectroscopy10athermal effect10aTiS3 nanoribbons10aTiS3 nanosheets1 aPawbake, Amit, S.1 aIsland, Joshua, O.1 aFlores, Eduardo1 aAres, Jose, Ramon1 aSanchez, Carlos1 aFerrer, Isabel, J.1 aJadkar, Sandesh, R.1 avan der Zant, Herre, S. J.1 aCastellanos-Gomez, Andres1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-raman-spectroscopy-titanium-trisulfide-tis3-nanoribbons-and-001466nas a2200145 4500008004100000245008900041210006900130260008100199300001000280520083600290100002301126700002301149700002401172856012401196 2015 eng d00aTransition metal di-chalcogenides and their nanocomposite prospective field emitters0 aTransition metal dichalcogenides and their nanocomposite prospec aGuangzhou, Peoples R ChinabIEEE, 345 E 47th ST, New York, NY 10017 USAcJUL a98-993 a

Layered structured transition metal di-chalcogenides has attracted researchers as a substitute of graphene and its forms for various applications. In an attempt to explore field emission properties of these graphene analogues, synthesis and field emission behaviour of a few layered transition metal di-chalcogenides (TMDs) VS2, MoS2, MoO3 have been investigated at a base pressure of 1x 10(-8) mbar. Furthermore, to improve the field emission properties, composites with RGO and respective oxides were synthesized and compared with the pristine ones. The TMDs and their composites is synthesized employing hydrothermal synthesis route. The preliminary results show that these TMD's and their composites, when synthesized in a controlled manner, can serve as potential field emitters for future field emission based devices.

1 aKhare, Ruchita, T.1 aMore, Mahendra, A.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/transition-metal-di-chalcogenides-and-their-nanocomposite-prospective-field-emitters01976nas a2200169 4500008004100000245009500041210006900136260000800205300001400213490000600227520135800233100002201591700001801613700002401631700002401655856012701679 2016 eng d00aTemperature dependent raman spectroscopy and sensing behavior of few layer SnSe2nanosheets0 aTemperature dependent raman spectroscopy and sensing behavior of cOCT a5380-53870 v13 aTwo- dimensional (2D) tin diselenide (SnSe2) nanosheets were synthesized using solvothermal route in one step and perform its humidity sensing, photo sensing and temperature dependant Raman spectroscopy studies. The sensor devices based on few layer SnSe2 nanosheets were prepared and which shows fast response as well as recovery time along with good long-term stability and high sensitivity. The photo sensing behavior shows the typical response time and recovery time to be similar to 310 ms and similar to 340 ms respectively for visible light illumination. The room temperature humidity sensing behaviors were studied in the range of 11-97% relative humidity (RH). The ob-served sensitivity of similar to 81% with response time of similar to 74 sec and recovery time of similar to 30 sec were calculated for the few layer SnSe2 nanosheets based humidity sensor. The humidity sensing results confirms the high stability of the device even after six months of time. The temperature dependent Raman spectroscopy investigation in the range of 80 K to 593 K were carried out which shows the negative temperature coefficient and softening of Raman modes as we increases the temperature. The softening modes of SnSe2 nanosheets due to temperature were explained on the basis of a double resonance process which is more active in an atomically thin sample.1 aPawbake, Amit, S.1 aDate, Abhijit1 aJadkar, Sandesh, R.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-raman-spectroscopy-and-sensing-behavior-few-layer-snse2nanosheets01234nas a2200157 4500008004100000245011500041210006900156260000800225490000600233520061800239100002200857700002400879700002400903700002400927856012500951 2016 eng d00aTemperature dependent Raman spectroscopy of electrochemically exfoliated few layer black phosphorus nanosheets0 aTemperature dependent Raman spectroscopy of electrochemically ex cAUG0 v63 aThe present investigation deals with temperature dependant Raman spectroscopy of electrochemically exfoliated few layer black phosphorus nanosheets. The temperature dependent study illustrates that softening of the A(g)(1), B-2g and A(g)(2) modes occurs as the temperature increases from 78 K to 573 K. The calculated temperature coefficients for the A(g)(1), B-2g and A(g)(2) modes were found to be -0.028 cm(-1) K-1, -0.028 cm(-1) K-1 and -0.018 cm(-1) K-1 respectively. The observed phenomenon can be utilized for characterizing other emerging two-dimensional inorganic layered materials with atomic thickness.1 aPawbake, Amit, S.1 aErande, Manisha, B.1 aJadkar, Sandesh, R.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-raman-spectroscopy-electrochemically-exfoliated-few-layer-black01901nas a2200205 4500008004100000022001400041245007600055210006900131260000800200300001100208490000600219520124400225653002101469653001001490653002101500653002301521653001901544100002401563856010801587 2016 eng d a2352-940700aTemperature-dependent phonon shifts in atomically thin MoTe2 nanosheets0 aTemperaturedependent phonon shifts in atomically thin MoTe2 nano cDEC a98-1020 v53 a

The present investigations deal with temperature-dependent Raman spectroscopy of bi-layer and few-layer molybdenum telluride (MoTe2) nanosheets prepared by micromechanical exfoliation method on a 300 nm SiO2/Si substrate. The temperature-dependent Raman spectroscopy was carried out using 633 nm laser excitation over the wider temperature range of 123-523 K. The temperature-dependent study illustrates the softening of A(1g), E-2g(1), and B-2g modes as temperature increases from 123 K to 523 K. The calculated temperature coefficients for A(1g), E-2g(1) and B-2g modes of the bi-layer MoTe2, nanosheet sample were found to be -0.00911 cm(-1) K-1, -0.01297 cm(-1) K-1 and -0.0159 cm(-1) K-1,respectively. For few-layer MoTe2 nanosheet sample, the temperature coefficient values were found to be -0.0113 cm(-1) K-1 (A(1g)), -0.0129 cm(-1) K-1 (E-2g(1)) and -0.0149 cm(-1) K-1 (B-2g), respectively. The present work highlights the temperature-dependent lattice vibration consequence of 2D MoTe2 nanosheet, which can be fundamentally pertinent in other promising and emerging 2D ultrathin layer and heterostructured materials to be used in future optoelectronic and nanoelectronic devices. (C) 2016 Elsevier Ltd. All rights reserved.

10aLayered material10aMoTe210aPhonon vibration10aRaman spectroscopy10athermal effect1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-phonon-shifts-atomically-thin-mote2-nanosheets02134nas a2200277 4500008004100000022001200041245010700053210006900160260000900229300001200238490000700250520121100257653001301468653001801481653001101499653002801510653002301538100002201561700001901583700002501602700002401627700002701651700002601678700002401704856012801728 2018 eng d a925963500aTemperature and pressure dependent Raman spectroscopy of plasma treated multilayer graphene nanosheets0 aTemperature and pressure dependent Raman spectroscopy of plasma  cAPR  a146-1560 v843 a

Understanding of the fine structure at the atomic level and properties of graphene by creating defects is important from the point of view of thermal and stress management. Here we report Raman spectroscopic studies on pristine and plasma treated multilayer graphene to explore the remarkable structure and phonon properties with temperature and pressure. Temperature dependent studies illustrate monotonic softening of G and G′ bands in the temperature range 78 to 573 K. This process can be of fundamental importance in other promising and emerging nano and heterostructured materials. The pressure dependent Raman spectroscopic investigations on G-band of these samples were carried out up to 25 GPa using a diamond anvil cell. Comparatively weak and more compressible nature of the G band (E2g in-plane mode) as a function of applied pressure is found in plasma treated graphene. After pressure release, the samples recover to their original ordered structure. The present study is important for further understanding of the fine structure, properties and effect of defects in graphene, which can affect the atomic bonds, thermal expansion, specific heat, and thermal conductivity as well.

10agraphene10ahigh pressure10aPhonon10aPlasma treated graphene10aRaman spectroscopy1 aPawbake, Amit, S.1 aMishra, K., K.1 aMachuno, Luis, G. B.1 aGelamo, Rogerio, V.1 aRavindranathan, T., R.1 aRout, Chandra, Sekhar1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-and-pressure-dependent-raman-spectroscopy-plasma-treated-multilayer-graphene02850nas a2200229 4500008004100000245010100041210006900142260000800211490000600219520198500225100002702210700002902237700003302266700002802299700002802327700002402355700002902379700003102408700002402439700002602463856013102489 2019 eng d00a Temperature-dependent phonon dynamics of supported and suspended monolayer tungsten diselenide 0 aTemperaturedependent phonon dynamics of supported and suspended  cAUG0 v93 a

Two-dimensional materials exhibit great potential for high-performance electronics applications and the knowledge of their thermal properties is extremely necessary, since they are closely related to efficient heat dissipation and electron-phonon interactions. In this study we report the temperature-dependence of the out-of-plane A(1g) Raman mode of suspended and supported CVD-grown single-crystalline tungsten diselenide (WSe2) monolayer. The A(1g) phonon wavenumber is linearly red-shifted for temperature ranging from 98 to 513 K, with first-order temperature coefficients beta of -0.0044 and -0.0064 cm(-1)/K for suspended and supported monolayer WSe2, respectively. The higher beta module value for supported sample is attributed to the increase of the phonon anharmonicity due to the phonon scattering with the surface roughness of the substrate. Our analysis of the temperature-dependent phonon dynamics reveal the influence of the substrate on thermal properties of monolayer WSe2 and provide fundamental information for developing of atomically-thin 2D materials devices. (C) 2019 Author(s).

1 aCarvalho, Thais, C. V.1 aAraujo, Francisco, D. V.1 aSantos, Clenilton, Costa dos1 aAlencar, Luciana, M. R.1 aRibeiro-Soares, Jenaina1 aLate, Dattatray, J.1 aLobo, Anderson, Oliveira1 aFilho, Antonio, Gomes Souz1 aAlencar, Rafael, S.1 aViana, Bartolomeu, C. uhttps://library.ncl.res.in/content/temperature-dependent-phonon-dynamics-supported-and-suspended-monolayer-tungsten-diselenide01727nas a2200217 4500008004100000022001400041245011800055210006900173260000900242300001200251490000700263520099200270653001501262653001001277653002301287653001101310653001901321100002401340700002401364856012101388 2019 eng d a2190-428600aTemperature-dependent Raman spectroscopy and sensor applications of PtSe2 nanosheets synthesized by wet chemistry0 aTemperaturedependent Raman spectroscopy and sensor applications  cFEB  a467-4740 v103 a

We report on a wet chemistry method used to grow PtSe2 nanosheets followed by thermal annealing. The SEM and TEM analysis confirms the formation of PtSe2 nanosheets. Furthermore, XRD, Raman, XPS and SAED patterns were used to analyze the crystal structure and to confirm the formation of the PtSe2 phase. The temperature-dependent Raman spectroscopy investigations were carried out on PtSe2 nanosheets deposited on Si substrates in the temperature range 100-506 K. The shifts in Raman active E-g and A(1g) modes as a function of temperature were monitored. The temperature coefficient for both modes was calculated and was found to match well with the reported 2D transition metal dichalcogenides. A PtSe2 nanosheet-based sensor device was tested for its applicability as a humidity sensor and photodetector. The humidity sensor based on PtSe2 nanosheets showed an excellent recovery time of approximate to 5 s, indicating the great potential of PtSe2 for future sensor devices.

10ananosheets10aPtSe210aRaman spectroscopy10aSensor10athermal effect1 aPawar, Mahendra, S.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/temperature-dependent-raman-spectroscopy-and-sensor-applications-ptse2-nanosheets01861nas a2200169 4500008004100000022001400041245011800055210006900173260000800242300001100250490000700261520123200268100001901500700002401519700001701543856013101560 2020 eng d a0734-210100aTunable light emission from chemical vapor deposited two-dimensional MoSe2 by layer variation and S incorporation0 aTunable light emission from chemical vapor deposited twodimensio cMAR a0234020 v383 a

Mono- and few-layer thick MoSe2 and MoSxSe2-x domains were grown on insulating SiO2/Si substrates by chemical vapor deposition. Scanning electron microscopy and optical contrast images were used to determine the domain size and morphology. The structure, crystallinity, and the thickness (number of layers) of the as-synthesized domains were determined from Raman spectroscopy. The light emission was determined from photoluminescence (PL) spectroscopy. The PL emission started appearing only in domains having four layers or less, with the intensity increasing as the number of layers decreased. The PL peak position varied between 1.48eV (similar to 838nm) for four layers to 1.55eV (similar to 800nm) in the monolayer limit. Sulfur incorporation was done to enable a further tunability of the bandgap. The monolayer bandgap changed from 1.55eV for MoSe2 to 1.64eV (similar to 756nm) for MoS0.32Se0.68. The other effect of S incorporation was the formation of larger area domains in the alloy as compared to binary MoSe2 with an improvement in the structural properties, thus providing a pathway to improve the properties of two-dimensional semiconductors by mixing of two materials with similar atomic arrangements.

1 aSingh, Vineeta1 aLate, Dattatray, J.1 aRath, Shyama uhttps://library.ncl.res.in/content/tunable-light-emission-chemical-vapor-deposited-two-dimensional-mose2-layer-variation-and-s02598nas a2200337 4500008004100000245008900041210006900130260000800199300001000207490000600217520154200223653002201765653001901787653001501806653001501821653000901836100002201845700002301867700002301890700002001913700001901933700002001952700002301972700002001995700001802015700002302033700003102056700003002087700002402117856011902141 2023 eng d00aTitanium trisulfide nanosheets and nanoribbons for field emission- based nanodevices0 aTitanium trisulfide nanosheets and nanoribbons for field emissio cJAN a44-490 v63 a

The field emission (FE) properties of TiS3 nanosheets and nanoribbons, synthesized by direct sulfuration of bulk titanium, are investigated. The nanosheets show an enhanced FE behavior with a low turn-on field of similar to 0.3 V/ mu m, required for drawing an emission current density of similar to 10 mu A/cm2. Interestingly, the TiS3 nanosheet emitter delivered a large emission current density of similar to 0.9 mA/ cm2 at a relatively low applied electric field of similar to 0.4 V/mu m. We have estimated the values of the field enhancement factor (beta), which are found to be similar to 5 x 104 for the TiS3 nanosheet emitter and similar to 4 x 103 for the nanoribbon emitter. We attribute the superior FE performance to the presence of atomically sharp edges and the reduced thickness of TiS3, as reflected in the high value of beta. In fact, the nanosheet sample presents a higher density of ultrathin layers (similar to 12 nm-thick), and thus, they have a larger edge to volume ratio than the nanoribbon samples (which are similar to 19 nm-thick). The superior FE behavior of TiS3 nanosheets over nanoribbons makes them a propitious field emitter and can be utilized for various FE-based applications, demanding large emission currents and lower operational voltages. Moreover, the FE current stability recorded on these samples confirms their promising performance. Thus, the present investigation brings out a great promise of TiS3 nanosheets and nanoribbons as field emitters for vacuum nanoelectronics devices.

10aCurrent stability10afield emission10ananoribbon10ananosheets10aTiS31 aPawbake, Amit, S.1 aKhare, Ruchita, T.1 aIsland, Joshua, O.1 aFlores, Eduardo1 aAres, Jose, R.1 aSanchez, Carlos1 aFerrer, Isabel, J.1 aPawar, Mahendra1 aFrank, Otakar1 aMore, Mahendra, A.1 avan der Zant, Herre, S. J.1 aCastellanos-Gomez, Andres1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/titanium-trisulfide-nanosheets-and-nanoribbons-field-emission-based-nanodevices