01822nas a2200265 4500008004100000022001400041245010300055210006900158260012500227300001100352490000700363520081100370653002101181653002001202653001901222653001501241100002801256700003001284700002401314700002501338700002201363700002301385700002001408856012801428 2010 eng d a0003-695100aHigh current density, low threshold field emission from functionalized carbon nanotube bucky paper0 aHigh current density low threshold field emission from functiona aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScAUG a0731020 v973 a

Field emission studies of bucky paper of multiwalled carbon nanotubes (MWNTs), prepared after microwave (MW) assisted acid functionalization are reported along with a comparison with that of ``as-grown'' sample. MW treated bucky papers reveal an interesting linear field emission behavior in Fowler-Nordheim plot. The field emission currents at preset value are found to be remarkably stable over a period of more than 3 h sustaining current densities of 4.9 mA/cm(2) and 8.5 mA/cm(2) for ``as-grown'' and functionalized sample, respectively. The enhancement in the field emission due to functionalization has been discussed in terms of tip opening and defect induced charge transport caused by intershell and intertubular interaction. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479049]

10aCarbon nanotubes10acurrent density10afield emission10afullerenes1 aKakade, Bhalchandra, A.1 aPillai, Vijayamohanan, K.1 aLate, Dattatray, J.1 aChavan, Padmakar, G.1 aSheini, Farid, J.1 aMore, Mahendra, A.1 aJoag, Dilip, S. uhttps://library.ncl.res.in/content/high-current-density-low-threshold-field-emission-functionalized-carbon-nanotube-bucky-001544nas a2200181 4500008004100000022001400041245007800055210006900133260007400202300001600276490000700292520085700299100002201156700002301178700002201201700002401223856011501247 2015 eng d a0957-452200aHigh performance single crystalline PbWO4 nanorod field effect transistor0 aHigh performance single crystalline PbWO4 nanorod field effect t aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcDEC a10044-100480 v263 a

The highly crystalline PbWO4 nanorods were synthesized using simple co-precipitation method which has application in field effect transistor. The synthesized PbWO4 nanorods were characterized by XRD, Raman spectroscopy, TEM and HRTEM indicating highly crystalline nature. Field effect transistor was fabricated on pre-patterned 300 nm SiO2/Si substrates using photolithography technique with channel length 1 A mu m and width 20 A mu m. Thin film (similar to 100 nm) was made up of PbWO4 nanorods by spin coating on the pre-patterned device used as channel layer. The field effect mobility was observed to be 4.7 cm(2) V-1 s(-1) and I-ON/OFF ratio similar to 10(3) which is far better than the organic molecules due to single crystalline nature and rod like morphology of the PbWO4 providing direct path for charges to transport towards channel.

1 aWalke, Pravin, S.1 aPatil, Vandana, B.1 aMulla, Imtiaz, S.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/high-performance-single-crystalline-pbwo4-nanorod-field-effect-transistor-001384nas a2200157 4500008004100000245007800041210006900119260000800188300002700196490000600223520081700229100002201046700002401068700002401092856011001116 2016 eng d00aHigh performance humidity sensor and photodetector based on SnSe nanorods0 aHigh performance humidity sensor and photodetector based on SnSe cOCT aArticle Number: 1050380 v33 aTin selenide (SnSe) nanorods were synthesized using a. one-step solvothermal route and. their. humidity sensing and photodetection performance at room temperature were investigated. The results depict. that SnSe nanorod-based humidity and photosensors have. good long-term stability, are. highly sensitive and have. fast response and recovery times. In the. case of the. humidity sensor it was observed that the resistance of the films decreased. with increasing relative humidity (RH). The humidity sensing behaviors were investigated in the range. 11-97% RHat room temperature. A. response time of similar to 68 s and recovery time of similar to 149 s were observed for. the humidity sensor. The photosensing behavior showed. typical response/recovery times of similar to 3 s with highly reproducible behavior.1 aPawbake, Amit, S.1 aJadkar, Sandesh, R.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/high-performance-humidity-sensor-and-photodetector-based-snse-nanorods02462nas a2200253 4500008004100000022001400041245013900055210006900194260007100263300001400334490000600348520151800354653003001872653002001902653001701922653001601939653001401955653002301969100002201992700002502014700002402039700002402063856012102087 2016 eng d a1944-824400aHighly transparent wafer-scale synthesis of crystalline WS2 nanoparticle thin film for photodetector and humidity-sensing applications0 aHighly transparent waferscale synthesis of crystalline WS2 nanop a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcFEB a3359-33650 v83 a

In the present investigation, we report a one-step synthesis method of wafer-scale highly crystalline tungsten disulfide (WS2) nanoparticle thin film by using a modified hot wire chemical vapor deposition (HW-CVD) technique. The average size of WS2 nanoparticle is found to be 25-40 nm over an entire 4 in. wafer of quartz substrate. The low-angle XRD data of WS2 nanoparticle shows the highly crystalline nature of sample along with orientation (002) direction. Furthermore, Raman spectroscopy shows two prominent phonon vibration modes of E12g and A1g at similar to 356 and similar to 420 cm(-1), respectively, indicating high purity of material. The TEM analysis shows good crystalline quality of sample. The synthesized WS2 nanoparticle thin film based device shows good response to humidity and good photosensitivity along with good long-term stability of the device. It was found that the resistance of the films decreases with increasing relative humidity (RH). The maximum humidity sensitivity of 469% along with response time of similar to 12 s and recovery time of similar to 13 s were observed for the WS2 thin film humidity sensor device. In the case of photodetection, the response time of similar to 51 s and recovery time of similar to 88 s were observed with sensitivity similar to 137% under white light illumination. Our results open up several avenues to grow other transition metal dichalcogenide nanoparticle thin film for large-area nanoelectronics as well as industrial applications.

10achemical vapor deposition10ahumidity sensor10ananoparticle10aphotosensor10athin film10atungsten disulfide1 aPawbake, Amit, S.1 aWaykar, Ravindra, G.1 aLate, Dattatray, J.1 aJadkar, Sandesh, R. uhttps://library.ncl.res.in/content/highly-transparent-wafer-scale-synthesis-crystalline-ws2-nanoparticle-thin-film-001953nas a2200217 4500008004100000022001400041245013300055210006900188260007100257300001600328490000600344520109300350653002101443653003201464653002001496653001801516100002401534700002401558700002401582856012901606 2016 eng d a1944-824400aHumidity sensing and photodetection behavior of electrochemically exfoliated atomically thin-layered black phosphorus nanosheets0 aHumidity sensing and photodetection behavior of electrochemicall a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcMAY a11548-115560 v83 a

Recent investigations on two-dimensional black phosphorus material mainly highlight work on few atomic layers and multilayers. It is still unknown if the black phosphorus atomically thin sheet is an ideal structure for the enhanced gas solid interactions due to its large surface area. To further investigate this concern, we have synthesized few atomic layer thick nanosheets of black phosphorus using an electrochemical exfoliation method. The surface morphology and thickness of the nanosheet were identified using AFM, TEM, and Raman spectroscopy. The black phosphorus nanosheet thick film device was used for the gas sensing application with exposure to different humidites. Further, the few layer black phosphorus nanosheet based transistor shows good mobility and on/off ratio. The UV light irradiation on the black phosphorus nanosheet shows good response time. The overall results show that the few layer thick film of black phosphorus nanosheets sample exhibits creditable sensitivity and better recovery time to be used in humidity sensor and photodetector applications.

10ablack phosphorus10aelectrochemical exfoliation10ahumidity sensor10aphotodetector1 aErande, Manisha, B.1 aPawar, Mahendra, S.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/humidity-sensing-and-photodetection-behavior-electrochemically-exfoliated-atomically-thin03292nas a2200145 4500008004100000245008300041210006900124260000800193490000600201520276400207100002002971700001702991700002403008856011403032 2017 eng d00aHigh-Performance Sensing Behavior Using Electronic Ink of 2D SnSe2 Nanosheets.0 aHighPerformance Sensing Behavior Using Electronic Ink of 2D SnSe cMAY0 v23 a

Most of the recent research work on layered chalcogenides is understandably focused on single atomic layers. However, it is uncertain if the single layer units are most ideal structures for enhanced gas-solid interactions. To probe this concern, we have synthesized few layer thick SnSe2 nanosheets ink using liquid exfoliation method. The morphology, thickness / layering and elemental analysis of the sheets were characterized by using SEM, TEM, AFM, Raman spectroscopy and by XPS. The two dimensional (2D) SnSe2 nanosheets sensor device with different thicknesses was assessed for the humidity and gas sensing performances with exposure to humidity in different conditions. The results show that compared to the bulk / thicker counterpart, sensor device of few SnSe2 layers exhibit excellent sensitivity, recovery and ability to be tune the sensing performance with thickness and can be used in lab on chip devices.

1 aPawar, Mahendra1 aKadam, Sunil1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/high-performance-sensing-behavior-using-electronic-ink-2d-snse2-nanosheets02321nas a2200313 4500008004100000022001400041245011600055210006900171260000800240300001100248490000600259520127500265100002401540700002001564700002501584700001901609700002801628700002401656700001801680700001701698700002801715700001901743700002301762700002301785700002301808700002201831700002401853856013001877 2018 eng d a2158-322600aHigh-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures0 aHighperformance field emission device utilizing vertically align cJAN a0151170 v83 a

The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 degrees C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm(-1) and D-band at 1340 cm(-1). The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm(2) at 1.2V/mu m), low turn-on field (0.6 V/mu m) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources. (c) 2018 Author(s).

1 aGupta, Bipin, Kumar1 aKedawat, Garima1 aGangwar, Amit, Kumar1 aNagpal, Kanika1 aKashyap, Pradeep, Kumar1 aSrivastava, Shubhda1 aSingh, Satbir1 aKumar, Pawan1 aSuryawanshi, Sachin, R.1 aSeo, Deok, Min1 aTripathi, Prashant1 aMore, Mahendra, A.1 aSrivastava, O., N.1 aHahm, Myung, Gwan1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/high-performance-field-emission-device-utilizing-vertically-aligned-carbon-nanotubes-based02714nas a2200145 4500008004100000245009000041210006900131260000800200300001200208490000800220520217800228100002202406700002402428856011602452 2019 eng d00a Hydrothermal growth of MoSe2 nanoflowers for photo- and humidity sensor applications0 aHydrothermal growth of MoSe2 nanoflowers for photo and humidity  cAUG a160-1680 v2953 a

In the present investigation, we report the synthesis of molybdenum diselenide (MoSe2) nanoflowers by facile hydrothermal method for photo- and humidity sensor applications. The obtained samples were characterized thoroughly by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The XRD spectrum shows crystalline nature of the sample. Raman spectroscopy shows two prominent vibration modes of E-2 (g)1 and A(1g) at (2) over tilde 41 and (2) over tilde 83 cm(-1) respectively. The crystalline nature of the sample confirmed with the TEM. The MoSe2 nanoflowers based sensor shows high photosensitivity and good response to humidity with excellent prolong stability. The maximum photoresponsitivity of (1) over tilde 94% along with response of (4) over tilde0 ms and recovery time of (4) over tilde8 ms were observed for the sample. In case of humidity sensor, response time of (5) over tilde3 s and recovery time of (1) over tilde3 s with maximum sensitivity -74% were observed under humidity environments. It suggests that, MoSe2 nanoflowers appear as a potential candidate for constructing high-performance nanoelectronics devices. (C) 2019 Elsevier B.V. All rights reserved.
 

1 aShelke, Nitin, T.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/hydrothermal-growth-mose2-nanoflowers-photo-and-humidity-sensor-applications