01441nas a2200217 4500008004100000022001400041245006600055210006600121260012500187300001100312490000700323520062500330100002300955700002800978700002201006700003001028700002401058700002301082700002001105856009801125 2008 eng d a0003-695100aEnhanced field emission from hexagonal rhodium nanostructures0 aEnhanced field emission from hexagonal rhodium nanostructures aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScJUN a2531060 v923 a

Shape selective synthesis of nanostructured Rh hexagons has been demonstrated with the help of a modified chemical vapor deposition using rhodium acetate. An ultralow threshold field of 0.72 V/mu m is observed to generate a field emission current density of 4 x 10(-3) mu A/cm(2). The high enhancement factor (9325) indicates that the origin of electron emission is from nanostructured features. The smaller size of emitting area, excellent current density, and stability over a period of more than 3 h are promising characteristics for the development of electron sources. (C) 2008 American Institute of Physics.

1 aSathe, Bhaskar, R.1 aKakade, Bhalchandra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aLate, Dattatray, J.1 aMore, Mahendra, A.1 aJoag, Dilip, S. uhttps://library.ncl.res.in/content/enhanced-field-emission-hexagonal-rhodium-nanostructures-001456nas a2200217 4500008004100000245006000041210005900101260000800160300001400168490000600182520078800188100002300976700002400999700002201023700001801045700001601063700002001079700002301099700002401122856009201146 2013 eng d00aEnhanced field-emission behavior of layered MoS2 sheets0 aEnhanced fieldemission behavior of layered MoS2 sheets cAUG a2730-27340 v93 aField emission studies are reported for the first time on layered MoS2 sheets at the base pressure of approximate to 1 x 10(-8) mbar. The turn-on field required to draw a field emission current density of 10 A/cm(2) is found to be 3.5 V/m for MoS2 sheets. The turn-on values are found to be significantly lower than the reported MoS2 nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (approximate to 1138) associated with nanometric sharp edges of MoS2 sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS2 could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications.1 aKashid, Ranjit, V.1 aLate, Dattatray, J.1 aChou, Stanley, S.1 aHuang, Yi-Kai1 aDe, Mrinmoy1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aDravid, Vinayak, P. uhttps://library.ncl.res.in/content/enhanced-field-emission-behavior-layered-mos2-sheets02123nas a2200241 4500008004100000022001400041245008600055210006900141260012500210300001100335490000800346520120400354100002601558700002601584700002301610700002001633700002301653700002201676700002301698700002101721700002401742856011501766 2014 eng d a0003-695100aEnhanced field emission properties of doped graphene nanosheets with layered SnS20 aEnhanced field emission properties of doped graphene nanosheets  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScJUL a0431090 v1053 a

We report here our experimental investigations on p-doped graphene using tin sulfide (SnS2), which shows enhanced field emission properties. The turn on field required to draw an emission current density of 1 mu A/cm(2) is significantly low (almost half the value) for the SnS2/reduced graphene oxide (RGO) nanocomposite (2.65 V/mu m) compared to pristine SnS2 (4.8 V/mu m) nanosheets. The field enhancement factor beta (similar to 3200 for the SnS2 and similar to 3700 for SnS2/RGO composite) was calculated from Fowler-Nordheim (F-N) plots, which indicates that the emission is from the nanometric geometry of the emitter. The field emission current versus time plot shows overall good emission stability for the SnS2/RGO emitter. The magnitude of work function of SnS2 and a SnS2/graphene composite has been calculated from first principles density functional theory (DFT) and is found to be 6.89 eV and 5.42 eV, respectively. The DFT calculations clearly reveal that the enhanced field emission properties of SnS2/RGO are due to a substantial lowering of the work function of SnS2 when supported by graphene, which is in response to p-type doping of graphene. (C) 2014 AIP Publishing LLC.

1 aRout, Chandra, Sekhar1 aJoshi, Padmashree, D.1 aKashid, Ranjit, V.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aSimbeck, Adam, J.1 aWashington, Morris1 aNayak, Saroj, K.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/enhanced-field-emission-properties-doped-graphene-nanosheets-layered-sns2-001854nas a2200301 4500008004100000020002200041022001400063245009100077210006900168260007700237520082300314653001301137653003801150100002401188700002201212700002001234700001801254700001901272700002301291700002401314700001601338700001701354700001701371700001801388700001701406700001501423856011401438 2014 eng d a978-1-4799-5306-6 a2164-237000aEnhancement in the field emission behavior of graphene in N-2/O-2 high vacuum ambience0 aEnhancement in the field emission behavior of graphene in N2O2 h aEngelberg, SwitzerlandbIEEE, 345 E 47th ST, New York, NY 10017 USAcJUL3 a

Herein we report, pressure dependent field emission (FE) behaviour of a few-layer graphene emitter. Gas dependent FE properties have been investigated in ultra high vacuum (UHV), as well as in N-2 and O-2 ambience at base pressure similar to 1x10(-6) torr. Interestingly, the graphene emitter when operated in N-2/O-2 ambience exhibits lower turn-on field and higher emission current density, as compared to the UHV conditions. The emission current stability investigated at preset value of similar to 1 mu A over the period of more than 2 hrs is found better in the N2 ambience and is characterized by fewer fluctuations, in contrast to the behaviour in the O-2 ambience. The observed enhanced electron emission behavior in N-2/O-2 ambience is attributed to modulation of the work function of graphene emitter.

10agraphene10aPressure Dependent Field Emission1 aSuryawanshi, S., R.1 aKolhe, Pankaj, S.1 aGavhane, D., S.1 aPatil, S., S.1 aChavan, P., G.1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aTsujino, S.1 aGobrecht, J.1 aParaliev, M.1 aBraun, H., H.1 aGroening, O.1 aFeurer, T. uhttps://library.ncl.res.in/content/enhancement-field-emission-behavior-graphene-n-2o-2-high-vacuum-ambience-001721nas a2200217 4500008004100000022001400041245009000055210006900145260007700214300001400291520089900305653001901204653002201223653001901245653001501264100002401279700002801303700002301331700002401354856012501378 2015 eng d a1434-194800aElectrochemically exfoliated black phosphorus nanosheets - prospective field emitters0 aElectrochemically exfoliated black phosphorus nanosheets prospec aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcJUL a3102-31073 a

Herein we report field emission (FE) investigations on an electrochemically exfoliated few-layered black phosphorus nanosheet emitter at a base pressure of approximately 1x10(-8) mbar. The turn-on electric field required to draw an emission current density of approximately 10 A/cm(2) is found to be about 4.2 V/m. Furthermore, few-layered black phosphorus nanosheet emitters deliver an emission current density of about 170 A/cm(2) at an applied field of about 7.5 V/m. The emission current vs. time plot measured at preset current values of about 5 A shows emission current fluctuations within +/- 10% of the average value, indicating the highly stable nature of the black phosphorus field emitter. Thus, the 2D black phosphorus nanosheets synthesized using the simple electrochemical exfoliation method can be utilized for micro/nanoelectronics and flat panel FE display applications.

10afield emission10aLayered compounds10aNanostructures10aPhosphorus1 aErande, Manisha, B.1 aSuryawanshi, Sachin, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/electrochemically-exfoliated-black-phosphorus-nanosheets-prospective-field-emitters-001498nas a2200169 4500008004100000245007000041210006900111260000800180300001200188490000600200520092700206100002401133700002601157700002301183700002001206856010201226 2015 eng d00aEmerging energy applications of two-dimensional layered materials0 aEmerging energy applications of twodimensional layered materials cMAR a118-1570 v33 a

Atomically thin semiconducting transition metal dichalcogenides (TMDCs) layered materials have recently been emerged as an exciting area of research due to accessibility for easy synthesis using various chemical and physical methods. These two-dimensional (2D) layered materials with single layer have direct and wide band gap due to which, they are more suitable for nanoelectronics and optoelectronics device applications. Here, we present a review of the energy related aspects of atomically thin layered materials like MoS2, WS2, MoSe2, WSe2, InSe, GaSe, GaTe, MoTe2, WTe2 etc. for supercapacitor, solar cell, lithium ion battery and water splitting application. By significantly assessing various materials and comparing their performances with challenging technology, the advantages and disadvantages of this promising area of energy materials are recognized, which may provide guidelines for future progress.

1 aLate, Dattatray, J.1 aRout, Chandra, Sekhar1 aChakravarty, Disha1 aRatha, Satyajit uhttps://library.ncl.res.in/content/emerging-energy-applications-two-dimensional-layered-materials01762nas a2200277 4500008004100000022001400041245006700055210006700122260008100189300001100270490000600281520085000287653003001137653001901167653001501186653001201201653001101213100002301224700002301247700002401270700002301294700001801317700002401335700002601359856009901385 2015 eng d a2053-159100aEnhanced electron field emission from NiCo2O4 nanosheet arrays0 aEnhanced electron field emission from NiCo2O4 nanosheet arrays aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcSEP a0950110 v23 a

Electron emission properties of electrodeposited spinel NiCo2O4 nanosheet arrays grown on Ni foam have been studied. The work function of NiCo2O4 was calculated by density functional theory using the plane-wave basis set and used to estimate the field enhancement factor. The NiCo2O4 nanosheet arrays exhibited a low turn-on field of 1.86 V mu m(-1) at 1 mu A cm(-2) and current density of 686 mu A cm(-2) at 3.2 V mu m(-1), with field enhancement factor beta = 1460 and good field emission current stability. The field emission properties of the NiCo2O4 nanosheet arrays showed enhanced performance compared to chemically prepared NiCo2O4 nanosheets. Hence, the nanosheet arrays have great potential as robust high performance vertical structure electron emitters for future flat panel displays and vacuum electronic device applications.

10aDensity functional theory10afield emission10ananosheets10aNiCo2O410aspinel1 aNaik, Kusha, Kumar1 aKhare, Ruchita, T.1 aGelamo, Rogerio, V.1 aMore, Mahendra, A.1 aThapa, Ranjit1 aLate, Dattatray, J.1 aRout, Chandra, Sekhar uhttps://library.ncl.res.in/content/enhanced-electron-field-emission-nico2o4-nanosheet-arrays-101325nas a2200193 4500008004100000022001400041245006600055210006600121260008700187300001100274490000800285520061800293100002300911700002400934700002300958700002400981700002601005856010001031 2015 eng d a0003-695100aEnhanced field emission of plasma treated multilayer graphene0 aEnhanced field emission of plasma treated multilayer graphene a1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScSEP a1235030 v1073 a

Electron emission properties of multilayer graphene (MLG) prepared by a facile exfoliation technique have been studied. Effect of CO2 Ar, N-2, plasma treatment was studied using Raman spectroscopy and investigated for field emission based application. The CO2 plasma treated multilayer graphene shows an enhanced field emission behavior with a low turn on field of 0.18 V/mu m and high emission current density of 1.89 mA/cm(2) at an applied field of 0.35 V/mu m. Further the plasma treated MLG exhibits excellent current stability at a lower and higher emission current value. (C) 2015 AIP Publishing LLC.

1 aKhare, Ruchita, T.1 aGelamo, Rogerio, V.1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aRout, Chandra, Sekhar uhttps://library.ncl.res.in/content/enhanced-field-emission-plasma-treated-multilayer-graphene-101915nas a2200217 4500008004100000022001400041245013600055210006900191260007700260300001400337520106100351653001801412653002101430653002201451653001501473653001901488653001301507100002301520700002401543856013001567 2015 eng d a1434-194800aExfoliation of bulk inorganic layered materials into nanosheets by the rapid quenching method and their electrochemical performance0 aExfoliation of bulk inorganic layered materials into nanosheets  aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcAPR a1973-19803 a

We report herein the results of our investigations on the synthesis of transition-metal dichalcogenide (TMDC) semiconductor layered materials of MoS2, WS2, MoSe2, and WSe2 by the rapid quenching method. The bulk powders were added to deionized water in a polypropylene tube and subsequently flushed with argon gas. Thirty rapid freezing (30 s in a liquid nitrogen bath) and heating (20 min in an oil bath at 60 degrees C) cycles were then carried out. The reaction product was obtained in a yield in excess of 60 wt.-%, which indicates that the method can be utilized on an industrial scale for the production of 2D nanosheets. The as-synthesized products were then characterized by TEM, which revealed nanosheet-like morphologies. Raman spectroscopy confirmed the high quality of the nanosheet samples. The exfoliated samples also showed good electrochemical performance. Of the TMDC samples investigated, the WSe2 nanosheets were found to give the best performance due to their uniform morphology, large surface area, and fewest number of defects.

10achalcogenides10aElectrochemistry10aLayered compounds10aMolybdenum10aNanostructures10aTungsten1 aChakravarty, Disha1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/exfoliation-bulk-inorganic-layered-materials-nanosheets-rapid-quenching-method-and-their-001766nas a2200217 4500008004100000022001400041245015400055210006900209260011000278300001600388490000600404520084700410100002201257700002201279700002501301700002401326700002401350700002601374700002401400856012401424 2016 eng d a2046-206900aEffect of plasma treatment on multilayer graphene: X-ray photoelectron spectroscopy, surface morphology investigations and work function measurements0 aEffect of plasma treatment on multilayer graphene Xray photoelec aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcMAY a48843-488500 v63 a

We report here the effect of plasma treatment on multilayer graphene samples as determined by X-ray photoelectron spectroscopy and surface morphology studies with atomic force microscopy, scanning electron microscopy and transmission electron microscopy. The plasma treatment was modified to introduce controlled levels of defects and functionalities to the graphene samples to give tunable properties. The elemental composition and structure were investigated by XPS and micro Raman spectroscopy. The XPS study showed that there was a slight variation in the sp(2)/sp(3) hybridization ratio between the plasma-treated samples and the pristine sample. Kelvin probe measurements were carried out on all the multilayer graphene samples and indicated a slight variation in the work function of the graphene samples after plasma treatment.

1 aPatil, Urmila, V.1 aPawbake, Amit, S.1 aMachuno, Luis, G. B.1 aGelamo, Rogerio, V.1 aJadkar, Sandesh, R.1 aRout, Chandra, Sekhar1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/effect-plasma-treatment-multilayer-graphene-x-ray-photoelectron-spectroscopy-surface01354nas a2200205 4500008004100000022001400041245006900055210006900124260007300193300001200266490000800278520063500286100002000921700001700941700002200958700002400980700002401004700001901028856010101047 2016 eng d a0009-261400aElectronic structure and properties of layered gallium telluride0 aElectronic structure and properties of layered gallium telluride aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY a148-1540 v6513 a

Layer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X=S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by water splitting using visible light provides a promising way for solar energy conversion, both theoretical and experimental studies have been carried out on the photochemical hydrogen evolution by GaTe. We also present the Raman spectra of GaTe examined by both theory and experiment. (C) 2016 Elsevier B.V. All rights reserved.

1 aShenoy, Sandhya1 aGupta, Uttam1 aNarang, Deepa, S.1 aLate, Dattatray, J.1 aWaghmare, Umesh, V.1 aRao, C., N. R. uhttps://library.ncl.res.in/content/electronic-structure-and-properties-layered-gallium-telluride02336nas a2200253 4500008004100000022001400041245005400055210005400109260008100163300002700244490000600271520147600277653003101753653003001784653001901814653001801833100002801851700002201879700002401901700002401925700002301949700002401972856008601996 2016 eng d a2053-159100aEnhanced field emission behavior of layered MoSe20 aEnhanced field emission behavior of layered MoSe2 aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcMAR aArticle Number: 0350030 v33 a

Herein, we report one step facile chemical vapor deposition method for synthesis of single-layer MoSe2 nanosheets with average lateral dimension similar to 60 mu m on 300 nm SiO2/Si and n-type silicon substrates and field emission investigation of MoSe2/Si at the base pressure of similar to 1 x 10(-8) mbar. The morphological and structural analyses of the as-deposited single-layer MoSe2 nanosheets were carried out using an optical microscopy, Raman spectroscopy and atomic force microscopy. Furthermore, the values of turn-on and threshold fields required to extract an emission current densities of 1 and 10 mu A cm(-2), are found to be similar to 1.9 and similar to 2.3 V mu m(-1), respectively. Interestingly, the MoSe2 nanosheet emitter delivers maximum field emission current density of similar to 1.5 mA cm(-2) at a relatively lower applied electric field of similar to 3.9 V mu m(-1). The long term operational current stability recorded at the preset values of 35 mu A over 3 hr duration and is found to be very good. The observed results demonstrates that the layered MoSe2 nanosheet based field emitter can open up many opportunities for their potential application as an electron source in flat panel display, transmission electron microscope, and x-ray generation. Thus, the facile one step synthesis approach and robust nature of single-layer MoSe2 nanosheets emitter can provide prospects for the future development of practical electron sources.

10aatomically thin nanosheets10achemical vapor deposition10afield emission10alayered MoSe21 aSuryawanshi, Sachin, R.1 aPawbake, Amit, S.1 aPawar, Mahendra, S.1 aJadkar, Sandesh, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/enhanced-field-emission-behavior-layered-mose201831nas a2200169 4500008004100000022001400041245007000055210006900125260009900194300001100293490000700304520117100311100002801482700002301510700002401533856010401557 2016 eng d a1071-102300aExfoliated 2D black phosphorus nanosheets: field emission studies0 aExfoliated 2D black phosphorus nanosheets field emission studies aSTE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USAbA V S AMER INST PHYSICScJUL a0418030 v343 a

A few layer black phosphorus (BP) nanosheets are obtained by micromechanical cleavage from a bulk BP crystal. In a typical exfoliation procedure, a layer of BP is peeled off from bulk crystal with the help of Scotch tape and transferred onto SiO2/Si and pristine Si substrates. The morphological and structural analyses of the samples were carried out using an optical microscopy, a transmission electron microscopy, and a Raman spectroscopy. Field emission investigations on a few layered BP nanosheets on Si substrate were carried out at the base pressure of 1 x 10(-8) mbar. The turn-on value, corresponding to emission current density of similar to 1 mu A/cm(2), is found to be similar to 5.1V/mu m for BP nanosheets/Si emitter and high field enhancement factor (beta) similar to 1164, attributed to atomically thin/sharp edges of the BP nanosheets. The emission current shows good stability at a preset value of similar to 5 mu A over a period of more than 8 h. The present results demonstrate the potential of the mechanically exfoliated BP nanosheets/Si field emitter for the development of practical electron sources. (C) 2016 American Vacuum Society.

1 aSuryawanshi, Sachin, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/exfoliated-2d-black-phosphorus-nanosheets-field-emission-studies01571nas a2200169 4500008004100000245012500041210006900166260000800235300001200243490000800255520091500263100001801178700002301196700002401219700002601243856013201269 2017 eng d00aElectrochemical synthesis of a ternary transition metal sulfide nanosheets on nickel foam and energy storage application0 aElectrochemical synthesis of a ternary transition metal sulfide  cFEB a154-1610 v6953 aWe report growth of nickel cobalt sulfide (NCS) ultrathin nanosheets directly on Ni foam substrate by a facile and novel electrodeposition method. The as-prepared NCS sample is used as an electrode material for supercapacitor application due to their large electrochemically active surface area and interconnected nanosheet channels for the facilitation of ion transportation. The NCS nanosheets possess enhanced electrochemical performance in terms of fast and high reversible faradaic reactions characterized by prominent oxidation and reduction peaks. NCS nanosheets showed an ultrahigh specific capacitance of 1712 Fg(-1) at a current density of 1 Ag-1 with excellent cyclic stability. The excellent supercapacitor performance of NCS nanosheets can be attributed to its rich redox reactions as well as high transport rate for both electrolyte ions and electrons. (C) 2016 Elsevier B.V. All rights reserved.1 aSahoo, Surjit1 aNaik, Kusha, Kumar1 aLate, Dattatray, J.1 aRout, Chandra, Sekhar uhttps://library.ncl.res.in/content/electrochemical-synthesis-ternary-transition-metal-sulfide-nanosheets-nickel-foam-and-energy02204nas a2200253 4500008004100000022001400041245009300055210006900148260000800217300001400225490000600239520137800245653002601623653002401649653001701673653000801690653000801698100002201706700002801728700002401756700002401780700002301804856012301827 2017 eng d a2365-654900aEnhanced field emission characteristics of a 3D hierarchical Hfo2-Zno heteroarchitecture0 aEnhanced field emission characteristics of a 3D hierarchical Hfo cMAR a2305-23100 v23 a

Three dimensional (3D) HfO2-ZnO heteroarchitecture comprised of thin coating of HfO2 on self assembled 3D ZnO urchins with pointed apex has been synthesized using hydrothermal route followed by Pulsed Laser Deposition (PLD). The as-synthesized HfO2-ZnO heteroarchitecture was characterized using XRD, SEM, EDS, and (HR) TEM, in order to reveal its structural, morphological, and chemical properties. The HfO2-ZnO heteroarchitecture emitter exhibits superior field emission (FE) behaviour in contrast to the pristine ZnO urchins, demonstrated by delivery of high emission current density of similar to 885 mA/cm2 at an applied field of similar to 3.35 V/mm, against similar to 383 mA/cm(2) at an applied field of similar to 4.32 V/mu m for the pristine ZnO urchins emitter. Interestingly, the HfO2-ZnO heteroarchitecture emitter exhibits excellent emission current stability characterized with fewer fluctuations, owing to very good ion-bombardment resistance offered by the HfO2 coating. Furthermore, the heteroarchitecture thus obtained facilitates tailoring of the morphology with high aspect ratio and modulation of electronic properties as well, thereby enhancing the FE behaviour. Despite HfO2 being wide band gap and high-k material, the HfO2-ZnO heteroarchitecture exhibits potential as promising candidate for fabrication of high current density cold cathode

10a3D heteroarchitecture10aField Emission (FE)10ahydrothermal10aPLD10aTEM1 aShisode, Raju, T.1 aSuryawanshi, Sachin, R.1 aMistari, Chetan, D.1 aLate, Dattatray, J.1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/enhanced-field-emission-characteristics-3d-hierarchical-hfo2-zno-heteroarchitecture02168nas a2200169 4500008004100000245008400041210006900125260000800194300001600202490000600218520156300224100002501787700002301812700002401835700002301859856011601882 2017 eng d00aEnhanced field emission performance of MoO3 nanorods and MoO3-rGO nanocomposite0 aEnhanced field emission performance of MoO3 nanorods and MoO3rGO cNOV a10912-109170 v23 a

The graphene and semiconducting hybrid based nanostructures have emerged as a new class of multifunctional materials with improved performance in comparison to the pristine semiconductors. Here, as-synthesized MoO3-reduced graphene oxide (rGO) nanocomposite emitter exhibits enhanced field emission (FE) behavior as compared to the pristine 1D MoO3 nanorods. The hydrothermally synthesized 1D MoO3 nanorods (1D) are grafted on the rGO sheet (2D) using a simple room temperature sonochemical method. The morphological and structural analysis confirms the attachment of MoO3 nanorods with rGO and the improved conductivity of the sample indicates a strong electronic interaction between them. Furthermore, the FE studies of as-synthesized MoO3 nanorods and MoO3-rGO nanocomposite emitters, carried out at a base pressure -1 x 10(-8) mbar, reveals the values of turn on field (required to draw an emission current density of 1 mu A/cm(2)) as 1.6 and 1.4 V/mu m, respectively. Interestingly, the maximum emission current density of 2810 mA/cm(2) is achieved at a lower applied field of 2.7 V/mu m from the MoO3-rGO nanocomposite emitter. The enhancement in FE performance of MoO3-rGO nanocomposite is attributed to the improved electrical conductivity, mechanical properties and higher concentration of protruding edges (emission sites). This observation can be extended to other graphene-based 1D inorganic hybrid semiconductor nanocomposites, which can provide a valuable opportunity to explore novel hybrid materials for vacuum nano-electronic devices.

1 aBankar, Prashant, K.1 aKhandare, Lina, N.1 aLate, Dattatray, J.1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/enhanced-field-emission-performance-moo3-nanorods-and-moo3-rgo-nanocomposite01599nas a2200181 4500008004100000245008100041210006900122260000800191300001300199490000800212520097300220100002501193700002001218700002301238700002401261700002601285856010601311 2017 eng d00aEnhanced field emission performance of NiMoO4 nanosheets by tuning the phase0 aEnhanced field emission performance of NiMoO4 nanosheets by tuni cOCT a270-274 0 v4183 aIn this paper we report, large scale synthesis of a and beta-NiMoO4 by a facile hydrothermal method and we observed that urea plays important role on the growth of beta-NiMoO4 nanosheets. We have also carried out field emission (FE) investigations of alpha and beta-NiMoO4 at a base pressure of similar to 1 x 10(-8) mbar. The obtained turn-on field at emission current density of 1 mu A/cm(2) for beta-NiMoO4 nanosheets and alpha-NiMoO4 is 1.3V/mu m and 2.2V/mu m respectively were observed. The maximum field emission current density of 1.006 mA/cm(2) at an applied electric field of 2.7V/mu m was achieved for beta-NiMoO4 nanosheets. Furthermore, we found that the beta-NiMoO4 nanosheets possess good field emission performance compared to alpha-NiMoO4. The results indicate that NiMoO4 can be used as a promising material in FE applications with possibility of tuning field emission performance by controlling the phase. (C) 2017 Elsevier B.V. All rights reserved.1 aBankar, Prashant, K.1 aRatha, Satyajit1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aRout, Chandra, Sekhar uhttps://library.ncl.res.in/content/enhanced-field-emission-performance-nimoo4-nanosheets-tuning-phase02226nas a2200241 4500008004100000022001400041245014000055210006900195260000800264300001200272490000600284520138100290653001501671653001901686653001501705100002801720700001801748700002101766700002401787700002401811700002301835856012601858 2017 eng d a2365-654900aExtraction of the very high tunneling current and extremely stable emission current from GdB6/W-tip source synthesized using arc plasma0 aExtraction of the very high tunneling current and extremely stab cJAN a562-5660 v23 a

Herein, we report the one step arc plasma synthesis of the GdB6 (Gadolinium hexaboride) nanoparticles and its field emission (FE) characteristics on tungsten point substrate (GdB6/ W). The SEM /TEM analysis revealed the GdB6 nanoparticles on W point substrate exhibit irregular shaped, grainy, dense, course morphology, i.e. uniformly covering the entire tip substrate surface. For GdB6/W point source, the values of the turn-on and threshold fields, defined as field required to draw an emission current density similar to 1 mA/cm(2) and similar to 100 mA/cm(2), respectively are found to be similar to 2.2 and similar to 2.7 V/mm, for anodecathode separation of similar to 1 mm. Interestingly, a very high emission current density of similar to 3.5 A/cm(2) has been drawn from the GdB6/W point emitter at relatively lower applied field of similar to 6.4 V/mm. The field enhancement factor found to be similar to 10,250. The GdB6/W point electron source exhibits a good emission current stability at similar to 10 mA for a period of 6 hr. The emission current stability is enumerated in terms of standard deviation and its magnitude has been measured to be only 1.72% with respect to the average value. The superlative field emission characteristics signify the GdB6/W point electron source as potential candidates for vacuum micro/nanoelectronics device applications.

10aArc Plasma10afield emission10aThin films1 aSuryawanshi, Sachin, R.1 aKanhe, Nilesh1 aMathe, Vikas, L.1 aPhase, Deodatta, M.1 aLate, Dattatray, J.1 aMore, Mahendra, A. uhttps://library.ncl.res.in/content/extraction-very-high-tunneling-current-and-extremely-stable-emission-current-gdb6w-tip01986nas a2200181 4500008004100000245011900041210006900160260000800229520126700237100002501504700002201529700002101551700002101572700002901593700002401622700002601646856013201672 2019 eng d00aExperimental and density functional theory investigations of catechol sensing properties of ZnO/RGO nanocomposites0 aExperimental and density functional theory investigations of cat cNOV3 a

Catechol, an essential industrial feedstock is one of the major environmental pollutant which causes several health issues including skin irritation, eye damage and genetic defects. In this work, we have investigated the catechol sensing performance of ZnO/RGO composites for its quantitative detection. ZnO/RGO composite showed superior electron transfer kinetics, sensitivity (162.04 mu A mM cm(-2)) and lower detection limit (47 nM) than that of bare ZnO nanoparticles. Further, the change in the zeta potential towards the lower negative demonstrated the strong electrostatic interaction between ZnO-RGO and catechol where it is converted as 1, 2 Benzoquinone through redox reactions. By using state of the art of Density Functional Theory simulations, we have demonstrated the interaction of catechol molecule on various ZnO clusters and RGO supported ZnO clusters. The strong bonding between p orbital of O atom of catechol and d orbital of Zn atom and its charge transfer facilitate the oxidation of catechol molecule. In the presence of RGO, the binding energy of catechol and charge transfer increases which qualitatively infer that RGO/ZnO exhibits higher sensitivity compared to bare ZnO and in consistency with the experimental observations.

1 aPonnusamy, Rajeswari1 aVenkatesan, Rajiu1 aGangan, Abhijeet1 aSamal, Rutuparna1 aChakraborty, Brahmananda1 aLate, Dattatray, J.1 aRout, Chandra, Sekhar uhttps://library.ncl.res.in/content/experimental-and-density-functional-theory-investigations-catechol-sensing-properties-znorgo02025nas a2200277 4500008004100000022001400041245012200055210006900177260000800246300001100254490000800265520107100273653002501344653002401369653000901393653001401402100002501416700002601441700002801467700002601495700002301521700002401544700002301568700002501591856013101616 2022 eng d a0921-510700aEnhanced field emission behaviour from ethylene glycol mediated synthesis of 2D hexagonal SnS2 disc with nanoparticle0 aEnhanced field emission behaviour from ethylene glycol mediated  cOCT a1158650 v2843 a

Herein, octahedron and stacked 2D hexagonal disc - like nanostructures of SnS2 were obtained by hydrothermal and ethylene glycol mediated hydrothermal methods, respectively. Attempt has been made to shade light on the plausible growth mechanism. Liquid phase exfoliation followed by centrifugation process leads to presence of tiny single crystalline SnS2 nanoparticles (similar to 5 nm) on the hexagonal discs over C substrate, characterized by preferred growth along {001} direction. The observed Raman shift and enhanced intensities of A(1g) and E-g modes infer charge interactions between the SnS2 disc and C substrate. Interestingly, the SnS2-C emitter exhibited superior field emission (FE) behaviour due to the unique morphology, excellent charge transfer, and reduced work function (similar to 4.1 eV). Here the extraction of large current density of similar to 1137 mu A/cm(2) at an applied field of 3.72 V/mu m, with good emission current stability. The present strategy is beneficial to design architectured morphology for multi-functionality.

10a2D layered materials10aField Emission (FE)10aSnS210aSnS2 on C1 aMutadak, Pallavi, R.1 aChaudhari, Nilima, S.1 aGadhave, Dattatraya, C.1 aRajput, Parikshit, K.1 aKolekar, Sadhu, K.1 aLate, Dattatray, J.1 aMore, Mahendra, A.1 aWarule, Sambhaji, S. uhttps://library.ncl.res.in/content/enhanced-field-emission-behaviour-ethylene-glycol-mediated-synthesis-2d-hexagonal-sns2-disc00959nas a2200289 4500008004100000022001400041245012400055210006900179260000800248300000900256490000700265653000700272653001900279653002600298653002600324653000700350653001700357653000700374100002200381700002300403700002800426700002000454700002300474700002300497700002400520856012500544 2024 eng d a0957-452200aExploring the synthesis, characterization, electrical, and magnetic behavior of crystalline Ni1-xZnxFe2O4 nanoparticles0 aExploring the synthesis characterization electrical and magnetic cSEP a17140 v3510aCO10aDC RESISTIVITY10aDIELECTRIC-PROPERTIES10aFERRITE NANOPARTICLES10aNi10aSubstitution10aZN1 aAdsure, Kiran, T.1 aJagtap, Sumant, B.1 aNewaskar, Shivkumar, R.1 aKore, Kiran, B.1 aFunde, Adinath, M.1 aPatange, Sunil, M.1 aLate, Dattatray, J. uhttps://library.ncl.res.in/content/exploring-synthesis-characterization-electrical-and-magnetic-behavior-crystalline-ni1