01854nas a2200301   4500008004100000020002200041022001400063245009100077210006900168260007700237520082300314653001301137653003801150100002401188700002201212700002001234700001801254700001901272700002301291700002401314700001601338700001701354700001701371700001801388700001701406700001501423856011401438       2014                        eng d  a978-1-4799-5306-6  a2164-237000aEnhancement in the field emission behavior of graphene in N-2/O-2 high vacuum ambience0 aEnhancement in the field emission behavior of graphene in N2O2 h  aEngelberg, SwitzerlandbIEEE, 345 E 47th ST, New York, NY 10017 USAcJUL3 a<p>Herein we report, pressure dependent field emission (FE) behaviour of a few-layer graphene emitter. Gas dependent FE properties have been investigated in ultra high vacuum (UHV), as well as in N-2 and O-2 ambience at base pressure similar to 1x10(-6) torr. Interestingly, the graphene emitter when operated in N-2/O-2 ambience exhibits lower turn-on field and higher emission current density, as compared to the UHV conditions. The emission current stability investigated at preset value of similar to 1 mu A over the period of more than 2 hrs is found better in the N2 ambience and is characterized by fewer fluctuations, in contrast to the behaviour in the O-2 ambience. The observed enhanced electron emission behavior in N-2/O-2 ambience is attributed to modulation of the work function of graphene emitter.</p>10agraphene10aPressure Dependent Field Emission1 aSuryawanshi, S., R.1 aKolhe, Pankaj, S.1 aGavhane, D., S.1 aPatil, S., S.1 aChavan, P., G.1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aTsujino, S.1 aGobrecht, J.1 aParaliev, M.1 aBraun, H., H.1 aGroening, O.1 aFeurer, T.  uhttps://library.ncl.res.in/content/enhancement-field-emission-behavior-graphene-n-2o-2-high-vacuum-ambience-002134nas a2200277   4500008004100000022001200041245010700053210006900160260000900229300001200238490000700250520121100257653001301468653001801481653001101499653002801510653002301538100002201561700001901583700002501602700002401627700002701651700002601678700002401704856012801728       2018                        eng d  a925963500aTemperature and pressure dependent Raman spectroscopy of plasma treated multilayer graphene nanosheets0 aTemperature and pressure dependent Raman spectroscopy of plasma   cAPR   a146-1560 v843 a<p>Understanding of the fine structure at the atomic level and properties of graphene by creating defects is important from the point of view of thermal and stress management. Here we report Raman spectroscopic studies on pristine and plasma treated multilayer graphene to explore the remarkable structure and phonon properties with temperature and pressure. Temperature dependent studies illustrate monotonic softening of G and G′ bands in the temperature range 78 to 573 K. This process can be of fundamental importance in other promising and emerging nano and heterostructured materials. The pressure dependent Raman spectroscopic investigations on G-band of these samples were carried out up to 25 GPa using a diamond anvil cell. Comparatively weak and more compressible nature of the G band (E2g in-plane mode) as a function of applied pressure is found in plasma treated graphene. After pressure release, the samples recover to their original ordered structure. The present study is important for further understanding of the fine structure, properties and effect of defects in graphene, which can affect the atomic bonds, thermal expansion, specific heat, and thermal conductivity as well.</p>10agraphene10ahigh pressure10aPhonon10aPlasma treated graphene10aRaman spectroscopy1 aPawbake, Amit, S.1 aMishra, K., K.1 aMachuno, Luis, G. B.1 aGelamo, Rogerio, V.1 aRavindranathan, T., R.1 aRout, Chandra, Sekhar1 aLate, Dattatray, J.  uhttps://library.ncl.res.in/content/temperature-and-pressure-dependent-raman-spectroscopy-plasma-treated-multilayer-graphene